NXP Semiconductors MRF8P20161HSR3

Overview

MRF8P20161HSR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA base station Doherty amplifier stages operating at 1880–1920 MHz. It delivers 37 W average output power with 16.4 dB power gain and 45.8% drain efficiency under W-CDMA conditions (28 V, 550 mA IDQA, 9.9 dB PAR), supporting Class AB/C operation in digital predistortion systems.

For engineers reviewing the MRF8P20161HSR3 datasheet, MRF8P20161HSR3 pinout, MRF8P20161HSR3 application, or MRF8P20161HSR3 equivalent, key selection criteria include its symmetrical Doherty characterization, 147 W CW P3dB compression, 10:1 VSWR ruggedness at 28 V, integrated ESD protection (HBM Class 2), and RoHS-compliant NI-780S-4 package.

Technical Context

This device is a dual-gate, dual-drain RF power transistor optimized for carrier-amplifier operation in symmetrical Doherty configurations. Its internal input/output matching enables 50 Ω system integration without external tuning networks, while the extended negative gate-source voltage range (–6.0 V) supports stable Class C biasing.

Large-signal load-pull data confirms peak P1dB tuning at 108 W (50.3 dBm) and maximum efficiency tuning up to 66.2% at 1930 MHz. The device is characterized with common-source S-parameters and validated for 100% PAR testing to guarantee linearized output power capability in W-CDMA infrastructure applications.

Key Specifications

Pinout & Package

Package: NI-780S-4, thermally enhanced ceramic/metal flange-mount package with isolated case (pin 3 and pin 4 are electrically isolated from case). Dimensions per Freescale Document MRF8P20161HS Rev. 0.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF8P20161HSR3, the MRFE6VP61K25HR5 offers greater peak power and bandwidth but demands more complex bias control, while the QPD1025 delivers superior efficiency in a narrower band but lacks on-die ESD hardening - making MRF8P20161HSR3 optimal for cost-sensitive, production-hardened CDMA/W-CDMA Doherty designs requiring proven ruggedness and ease of integration.

Availability

MRF8P20161HSR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, W-CDMA macrocell amplifiers, multi-carrier cellular infrastructure, and Doherty test fixture implementations requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for MRF8P20161HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors for wireless infrastructure, emphasizing ruggedness, linearity, and manufacturability in cellular base station applications.

The MRF8P series targets high-efficiency, digitally predistorted Doherty amplifier stages in 3G/4G macrocell base stations, with focus on production test coverage, thermal reliability, and simplified RF layout through internal matching.

FAQ

What is the recommended gate bias configuration for MRF8P20161HSR3 in Doherty operation?

The MRF8P20161HSR3 requires separate DC bias on pins 1 (RFinA/VGSA) and 2 (RFinB/VGSB): VGSA ≈ +2.7 Vdc (carrier quiescent) and VGSB ≈ –1.6 Vdc (peaking cutoff), per Freescale's functional test conditions. This asymmetry enables optimal Doherty load modulation and must be maintained using independent gate bias networks to avoid cross-talk and efficiency degradation in the MRF8P20161HSR3.

Does MRF8P20161HSR3 require external matching components for 50 Ω systems?

No - the MRF8P20161HSR3 is internally matched on both input and output, as confirmed in Table 4 footnote 2 and Figure 1 layout. Freescale's reference design (Table 5) uses only decoupling and stabilization capacitors; no series/shunt resonators or transmission-line transformers are needed for nominal 50 Ω operation at 1880–1920 MHz, simplifying layout and reducing component count for the MRF8P20161HSR3.

What thermal derating applies to MRF8P20161HSR3 above 25°C case temperature?

Per Table 1, the MRF8P20161HSR3 derates at 1.86 W/°C above 25°C case temperature for continuous-wave operation. At TC = 74°C (37 W condition), junction temperature reaches 206°C; at TC = 93°C (160 W condition), RθJC drops to 0.53 °C/W. Thermal design must maintain TC ≤ 150°C (absolute max) and account for this slope to ensure MTTF compliance per Freescale's online calculator for the MRF8P20161HSR3.

How is ESD protection implemented in MRF8P20161HSR3?

The MRF8P20161HSR3 integrates on-die ESD protection structures validated to HBM Class 2 (≥2 kV), MM Class A, and CDM Class IV per Tables 3 and 4. This eliminates need for external gate-protection diodes in standard handling and board-level environments, directly supporting robust manufacturing and field reliability for the MRF8P20161HSR3 without compromising RF performance or bias stability.

Can MRF8P20161HSR3 be used outside the 1880–1920 MHz band?

Yes - Freescale characterizes the MRF8P20161HSR3 from 1880–2025 MHz, with verified performance at 2025 MHz (105 W P1dB, 64.1% efficiency). However, gain flatness degrades beyond 1920 MHz, and ACPR worsens; operation up to 2025 MHz is supported for CDMA Band VIII extensions, but full W-CDMA linearity specs apply only within 1880–1920 MHz per the MRF8P20161HSR3 datasheet.