NXP Semiconductors MRF8P20165WHR3

Overview

MRF8P20165WHR3 from NXP Semiconductors (formerly Freescale) is a high-efficiency, 37 W average output power, N-channel enhancement-mode lateral RF power MOSFET optimized for Doherty amplifier architectures in 1880–2025 MHz base station transmitters. It delivers 16.3 dB power gain, 47.7% drain efficiency, and –29.7 dBc ACPR at 1960 MHz under W-CDMA single-carrier conditions with 3.84 MHz bandwidth and 9.9 dB PAR. Designed for digital predistortion systems, it supports wide instantaneous bandwidth up to 100 MHz VBW_res.

For engineers reviewing the MRF8P20165WHR3 datasheet, MRF8P20165WHR3 pinout, MRF8P20165WHR3 application, or MRF8P20165WHR3 equivalent, this device requires attention to symmetrical Doherty biasing (V_GSB = 1.3 Vdc), dual-drain thermal management (R_θJC = 0.79°C/W @ 37 W), gate-source voltage range (–6.0 to +10 Vdc), and NI-780S-4 package compatibility.

Technical Context

This device implements a dual-gate, dual-drain lateral MOSFET structure with internally matched input/output impedances for 50 Ω systems. Its symmetrical Doherty configuration uses separate RF inputs (RFinA/VGSA, RFinB/VGSB) and outputs (RFoutA/VDSA, RFoutB/VDSB), enabling carrier/peaking path integration without external combining networks.

It features integrated ESD protection rated Class 1C HBM, operates at junction temperatures up to 225°C, and sustains 10:1 VSWR at 32 Vdc and 1960 MHz. Thermal resistance is characterized at two operating points: 0.79°C/W at 37 W CW and 0.53°C/W at 160 W CW, reflecting its scalable thermal performance across power levels.

Key Specifications

Pinout & Package

Package: NI-780S-4 (Case 465H-02, Style 1), surface-mount ceramic/metal flange package with exposed thermal pad. Dimensions per Freescale drawing: 10.16 mm × 10.16 mm × 4.57 mm. RoHS compliant, tape-and-reel (R3 suffix = 250 units, 32 mm tape width, 13″ reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with AFM8P20165WHR3 and MRF8P20145WHR5, the MRF8P20165WHR3 provides highest P3dB headroom and best efficiency in the 1930–1995 MHz band, making it optimal for macrocell Doherty PAs demanding maximum linear output and thermal margin.

Availability

MRF8P20165WHR3 is available at Aetrix Electronics and suitable for macrocell base station transmitters, remote radio heads, and wideband active antenna systems requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for MRF8P20165WHR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture and support high-performance LDMOS RF transistors for wireless infrastructure.

The MRF8P20165WHR3 belongs to NXP's MRF8P family of Doherty-optimized RF power MOSFETs, designed specifically for energy-efficient, digitally predistorted base station amplifiers operating in licensed sub-3 GHz spectrum.

FAQ

What is the recommended gate bias voltage for the peaking path of MRF8P20165WHR3?

The MRF8P20165WHR3 peaking path (RFinB/VGSB) is specified for V_GSB = 1.3 Vdc under typical W-CDMA Doherty operation. This voltage enables Class C conduction while maintaining linearity within the symmetrical architecture. The gate threshold voltage range is 1.2–2.7 Vdc, so 1.3 Vdc ensures reliable turn-on margin without excessive quiescent current. Always verify bias stability using low-inductance decoupling per Freescale AN1955.

Does MRF8P20165WHR3 require external input/output matching networks?

No - the MRF8P20165WHR3 is internally matched for 50 Ω operation on both input and output ports, as confirmed in Table 4 functional test notes and Figure 11 broadband gain response. External matching is optional only for fine-tuning narrowband performance or optimizing for non-standard load impedances; standard Doherty reference designs (e.g., Freescale production test circuit) operate without discrete matching components.

What thermal interface material is recommended for MRF8P20165WHR3 mounting?

Freescale recommends thermally conductive epoxy or solder attachment to a copper or aluminum heatsink, with thermal resistance characterization based on case temperature at the flange center. For production use, a 0.002″–0.003″ layer of silver-filled thermal paste (e.g., Wakefield-Vette Sil-Pad 1000) achieves the 0.79°C/W R_θJC value cited at 37 W. Avoid silicone-based pastes that degrade above 125°C case temperature.

Can MRF8P20165WHR3 be used in push-pull or quadrature configurations?

Yes - Freescale's Figure 4 explicitly lists push-pull and quadrature combined topologies as viable alternatives to Doherty for the MRF8P20165WHR3. However, the device is characterized and production-tested exclusively in symmetrical Doherty mode; push-pull use requires independent load-pull validation and may sacrifice efficiency and linearity benefits inherent to the Doherty architecture.

What is the maximum continuous drain voltage rating for MRF8P20165WHR3?

The MRF8P20165WHR3 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc, as stated in Table 1 Maximum Ratings. This allows safe operation under 10:1 VSWR conditions at 32 Vdc supply, where reflected power can generate transient drain voltages exceeding nominal rail voltage. Operation beyond +65 Vdc risks irreversible avalanche breakdown and permanent device failure.