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NXP Semiconductors MRF8P20165WHR5
- Part No.:
- MRF8P20165WHR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780-4
- Datasheet:
-
MRF8P20165WHR5.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:3,916
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Product details
Overview
MRF8P20165WHR5 from NXP Semiconductors (formerly Freescale) is a 37 W average, 1930–1995 MHz Doherty-configurable RF power LDMOS transistor optimized for W-CDMA base station amplifiers. It delivers 16.3 dB power gain and 47.7% drain efficiency at 1960 MHz under 28 Vdc, 550 mA quiescent bias, with integrated ESD protection and internal input/output matching.
For engineers reviewing the MRF8P20165WHR5 datasheet, MRF8P20165WHR5 pinout, MRF8P20165WHR5 application, or MRF8P20165WHR5 equivalent, key selection criteria include its 100 MHz VBW resonance, 190 W P3dB compression point, 10:1 VSWR ruggedness at 32 Vdc, and symmetrical Doherty characterization across 1930–2025 MHz.
Technical Context
This dual-gate, dual-drain lateral N-channel MOSFET supports symmetrical Doherty amplifier topologies with separate RFinA/VGSA and RFinB/VGSB inputs and RFoutA/VDSA and RFoutB/VDSB outputs. Its gate threshold voltage (1.2–2.7 Vdc) and wide negative gate-source voltage range (–6.0 Vdc) enable stable Class AB/C operation under digital predistortion control.
The device is internally matched for 50 Ω systems, characterized using large-signal load-pull data at 1930/1960/1995 MHz, and production-tested in a symmetrical Doherty configuration with 3.84 MHz W-CDMA channel bandwidth and 9.9 dB PAR input signals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1930–1995 MHz operating band; supports full 1880–2025 MHz base station coverage with broadband gain flatness ≤0.2 dB over 65 MHz. |
| Avg. Output Power | 37 W at 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc; validated for single-carrier W-CDMA with IQ clipping and 9.9 dB PAR @ 0.01% CCDF probability. |
| P3dB Compression | 190 W CW; enables headroom for 7.0 dB PAR signal handling without distortion-induced gain collapse in DPD-corrected systems. |
| Drain Efficiency | 47.7% at 1960 MHz; reduces thermal load and improves system-level power budget in macrocell and remote radio head designs. |
| ACPR @ ±5 MHz | –29.7 dBc (1960 MHz); meets 3GPP W-CDMA spectral mask requirements without external filtering in linearized PA stages. |
| VSWR Tolerance | 10:1 at 32 Vdc, 1960 MHz, 173 W CW; ensures robust operation under antenna mismatch conditions common in outdoor base station deployments. |
| Junction Temp. Max | 225°C; supports high-power density PCB layouts with thermal resistance RθJC = 0.53°C/W at 114°C case temperature. |
Pinout & Package
Package: NI-780S-4 (Case 465H-02, Style 1), ceramic/metal flange-mount package with solderable baseplate for high-power thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFinA / VGSA | Main amplifier gate input | Accepts RF drive signal for carrier path; biased at ~2.7 Vdc quiescent; supports –6.0 to +10 Vdc gate voltage range. |
| 2 - RFinB / VGSB | Auxiliary amplifier gate input | Accepts phase-shifted RF drive for peaking path in Doherty topology; factory-biased at 1.3 Vdc for optimal symmetry. |
| 3 - RFoutA / VDSA | Main amplifier drain output | Delivers high-efficiency carrier power; internally matched to 50 Ω; rated for 65 Vdc drain-source voltage. |
| 4 - RFoutB / VDSB | Auxiliary amplifier drain output | Delivers peak power during signal envelope excursions; shares same VDD rail as Pin 3; requires external hybrid coupler for combining. |
Key Features
| Feature | Design Value |
|---|---|
| Symmetrical Doherty Production Test | 100% tested in functional Doherty fixture with 2-carrier W-CDMA, enabling immediate integration into pre-validated PA architectures. |
| Integrated ESD Protection | HBM Class 1C (≥2 kV), MM Class B, CDM Class III - eliminates need for external gate protection diodes in board layout. |
| VBW Resonance at 100 MHz | Enables stable broadband linearity up to 65 MHz signal bandwidth, critical for multi-carrier and wideband LTE/W-CDMA coexistence. |
| 100% PAR Tested | Guarantees minimum 37 W average output power under 9.9 dB PAR W-CDMA signal, reducing design margin uncertainty. |
| Internally Matched I/O | Reduces external matching network complexity; input and output impedances pre-tuned for 50 Ω systems at 1960 MHz. |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: High-power 3G W-CDMA transmission in urban macrocell sites with 2×2 MIMO and digital predistortion. IC Role / Device Role / Timing Role: Main/peaking path RF power transistor in symmetrical Doherty final stage driving sector antennas. Use Value: Delivers 47.7% efficiency at 37 W avg. with –29.7 dBc ACPR, reducing cooling requirements and AC power draw per sector. |
Use Scenario: Compact, thermally constrained RRH units deployed on cell towers with fiber backhaul and centralized baseband. IC Role / Device Role / Timing Role: Dual-path RF power amplifier core supporting 1930–1995 MHz band with integrated thermal sensing interface. Use Value: 0.53°C/W thermal resistance and 225°C max junction temperature allow reliable operation in sealed, passively cooled enclosures. |
| Multi-Band BTS Power Amplifier | Digital Predistortion (DPD) Reference Platform |
|
Use Scenario: Shared PA architecture serving multiple 3G bands (Band I/II/XXI) via broadband tuning and harmonic filtering. IC Role / Device Role / Timing Role: Wide instantaneous bandwidth (100 MHz VBWres) RF transistor enabling reconfigurable front-end with minimal component change. Use Value: Gain flatness ≤0.2 dB over 65 MHz allows single PA design to cover adjacent bands without retuning, cutting BOM and validation time. |
Use Scenario: Lab-grade DPD characterization platform validating algorithm performance under real-world signal dynamics. IC Role / Device Role / Timing Role: Production-tested, PAR-validated RF transistor providing repeatable nonlinear behavior for model extraction and correction loop calibration. Use Value: 100% PAR-tested unit-to-unit consistency ensures accurate memory polynomial modeling and <2 dB IMD symmetry tolerance at 74 W PEP. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM906S | 6 W avg. at 1930–1995 MHz; GaN-on-SiC; 50 V operation; lower P3dB (45 W). | Targeted at low-power microcells and small cells; not rated for 10:1 VSWR or symmetrical Doherty production test. | Select when size, efficiency at low power, or higher supply voltage tolerance outweighs need for 37 W avg. output and ruggedness. |
| MRF8P20140WHSR5 | 28 Vdc-rated; 28 W avg.; identical NI-780S-4 package; 160 W P3dB; 44.3% ηD at 1960 MHz. | Same footprint and bias scheme; lower power tier for cost-sensitive macrocell upgrades or legacy site retrofits. | Choose for drop-in replacement where 37 W is excessive; retains same thermal interface, PCB layout, and Doherty test compatibility. |
Compared with AFM906S and MRF8P20140WHSR5, the MRF8P20165WHR5 uniquely combines 37 W average output, 190 W P3dB, and factory-verified symmetrical Doherty performance - making it the only option qualified for high-linearity, high-reliability macrocell final stages requiring guaranteed PAR handling and 10:1 VSWR resilience.
Availability
MRF8P20165WHR5 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, multi-band BTS power amplifiers, and DPD reference platforms requiring stable component supply and long-term lifecycle support.
Supply support for MRF8P20165WHR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in automotive, industrial, and communications semiconductor technologies.
The MRF8P20165WHR5 belongs to NXP's MRF8P family of LDMOS RF power transistors, designed specifically for energy-efficient, spectrally clean cellular infrastructure amplifiers operating in licensed 3G/4G frequency bands.
FAQ
What is the maximum continuous drain voltage rating for the MRF8P20165WHR5?
The MRF8P20165WHR5 has a maximum drain-source voltage (VDSS) rating of +65 Vdc and –0.5 Vdc. This allows safe operation under transient overvoltage conditions typical in base station PA stages, including 32 Vdc nominal supply with 10:1 VSWR events delivering up to 173 W CW output without failure.
Does the MRF8P20165WHR5 require external matching networks?
No - the MRF8P20165WHR5 is internally matched for 50 Ω systems on both input and output. Freescale's characterization confirms optimal performance at 1960 MHz using the specified production test circuit, eliminating discrete matching components for standard Doherty implementations while retaining flexibility for custom tuning.
How is the MRF8P20165WHR5 qualified for Doherty amplifier use?
The MRF8P20165WHR5 is 100% production-tested in a symmetrical Doherty configuration using two-carrier W-CDMA signals. It is characterized with large-signal load-pull parameters and validated for IMD symmetry >2 dB at 74 W PEP - ensuring predictable peaking-to-carrier timing alignment and gain balance required for high-efficiency Doherty operation.
What thermal management guidance applies to the MRF8P20165WHR5?
The MRF8P20165WHR5 features a thermal resistance RθJC of 0.53°C/W at 114°C case temperature under 160 W CW operation. Designers must mount the NI-780S-4 package directly to a copper heatsink with ≥1.5 oz. thickness and thermal interface material (TIM) meeting 0.5 W/m·K minimum conductivity to maintain TC ≤125°C and TJ ≤225°C.
Is the MRF8P20165WHR5 RoHS compliant and lead-free?
Yes - the MRF8P20165WHR5 is RoHS compliant and manufactured with lead-free terminations. Its NI-780S-4 package uses matte tin plating on solderable surfaces and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 3, requiring bake-out before reflow if exposed beyond floor life.
MRF8P20165WHR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780-4
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.98GHz ~ 2.01GHz
- Gain:
- 14.8dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 550 mA
- Power - Output:
- 37W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780-4
MRF8P20165WHR5 FAQ
1.How can I place an order for MRF8P20165WHR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF8P20165WHR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF8P20165WHR5 reliable?
The price and inventory of MRF8P20165WHR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF8P20165WHR5 is usually 5 days.
3.What payment methods are accepted for MRF8P20165WHR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF8P20165WHR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF8P20165WHR5?
MRF8P20165WHR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF8P20165WHR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF8P20165WHR5?
For technical support, including MRF8P20165WHR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF8P20165WHR5 requirements.
6.How does Aetrix verify that MRF8P20165WHR5 is sourced from the original manufacturer or authorized distributors?
All MRF8P20165WHR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF8P20165WHR5 meets industry standards.
7.What is the process for return or replacement of MRF8P20165WHR5?
All MRF8P20165WHR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF8P20165WHR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF8P20165WHR5 part is unused and in its original packaging.
Return procedure for MRF8P20165WHR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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