NXP Semiconductors MRF8P20165WHSR3

Overview

MRF8P20165WHSR3 from NXP Semiconductors (formerly Freescale) is a high-efficiency, dual-path GaN-based RF power transistor designed for symmetrical Doherty amplifier stages in 3G/4G base station transmitters. It operates across 1930–1995 MHz, delivers 37 W average output power under W-CDMA modulation, achieves 47.7% drain efficiency at 1960 MHz, and supports 65 MHz instantaneous signal bandwidth with 100 MHz VBW resonance - optimized for digital predistortion (DPD) linearization in macrocell infrastructure.

For engineers reviewing the MRF8P20165WHSR3 datasheet, MRF8P20165WHSR3 pinout, MRF8P20165WHSR3 application, or MRF8P20165WHSR3 equivalent, key selection criteria include its 190 W P3dB compression point, 10:1 VSWR ruggedness at 32 Vdc, integrated ESD protection (HBM Class 1C), NI-780S-4 package with 32 mm tape width, and production validation in symmetrical Doherty configuration per Freescale's R3 tape-and-reel standard.

Technical Context

The MRF8P20165WHSR3 implements a lateral N-channel enhancement-mode MOSFET architecture with internally matched input/output networks, enabling direct integration into 50 Ω systems without external matching. Its dual-gate/dual-drain structure supports independent biasing of carrier and peaking paths in Doherty topologies, with VGSB = 1.3 Vdc and IDQA = 550 mA quiescent conditions specified for optimal linearity and efficiency trade-off.

Thermal design is enabled by low junction-to-case thermal resistance (0.53 °C/W at 114°C case temperature), while robustness is ensured by ±6 V gate-source voltage rating, +65 V drain-source breakdown, and 225°C maximum junction temperature. The device is characterized using large-signal load-pull data and common-source S-parameters, with all units 100% PAR-tested for guaranteed output power capability.

Key Specifications

Pinout & Package

Package: NI-780S-4 (Case 465M-01, Style 1), surface-mount ceramic/metal flange package with exposed thermal pad; 32 mm tape width, 13-inch reel, R3 suffix = 250 units.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM906S and MRF8P20140HR3, the MRF8P20165WHSR3 provides superior wideband linearity (100 MHz VBW), higher ruggedness (10:1 VSWR), and verified symmetrical Doherty performance - making it the preferred choice for new macrocell and RRH designs demanding >35 W avg. output and DPD compatibility.

Availability

MRF8P20165WHSR3 is available at Aetrix Electronics and suitable for macrocell base station transmitters, remote radio heads, digital predistortion validation systems, and cellular infrastructure test equipment requiring stable component supply and long-term lifecycle support.

Supply support for MRF8P20165WHSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in gallium nitride (GaN) and laterally diffused MOS (LDMOS) technologies for wireless infrastructure.

The MRF8P20165WHSR3 belongs to NXP's MRF8P family of wideband RF power transistors, engineered specifically for energy-efficient, digitally linearized Doherty amplifiers in 3G/4G/LTE macrocell and massive MIMO base stations.

FAQ

What is the recommended gate bias voltage for MRF8P20165WHSR3 in Doherty operation?

The MRF8P20165WHSR3 requires VGS(Q) = 2.0–3.5 Vdc on Pin 1 (RFinA/VGSA) for the carrier path and VGSB = 1.3 Vdc on Pin 2 (RFinB/VGSB) for the peaking path, as validated in Freescale's symmetrical Doherty production test fixture. These values ensure optimal gain balance and efficiency tracking across temperature and signal bandwidth.

Does MRF8P20165WHSR3 support LTE TDD or only FDD bands?

The MRF8P20165WHSR3 is characterized and specified for 1930–1995 MHz operation, covering FDD-LTE Band I (1920–1980 MHz) and Band II (1850–1910 MHz) uplink. While not explicitly tested for TDD, its 100 MHz VBW resonance and 65 MHz signal bandwidth support TDD-LTE configurations within this frequency range when combined with appropriate driver and filtering stages.

What is the thermal resistance (RθJC) of MRF8P20165WHSR3 under full-power operation?

The MRF8P20165WHSR3 exhibits RθJC = 0.53 °C/W when operating at 160 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, and 1960 MHz with case temperature at 114°C. This value is measured per AN1955 methodology and enables precise heatsink sizing for macrocell PA modules targeting <100°C case temperature.

Is MRF8P20165WHSR3 RoHS compliant and lead-free?

Yes, the MRF8P20165WHSR3 is RoHS compliant and lead-free, as confirmed in the official Freescale documentation (Rev. 0, April 2011). The NI-780S-4 package uses matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements for surface-mount assembly.

Can MRF8P20165WHSR3 be used in push-pull or single-ended configurations?

Although optimized for symmetrical Doherty operation, the MRF8P20165WHSR3 can be configured in push-pull or single-ended topologies per Figure 4 of the datasheet. However, doing so forfeits the efficiency and linearity benefits of its dual-path architecture - gain, P3dB, and ACPR will deviate from published Doherty-characterized values without re-optimization of bias and matching networks.