NXP Semiconductors MRF8P20165WHSR5

Overview

MRF8P20165WHSR5 from NXP Semiconductors (formerly Freescale) is a 37 W average, 1930–1995 MHz Doherty-configurable RF power LDMOS transistor optimized for W-CDMA base station amplifiers. It delivers 16.3 dB power gain and 47.7% drain efficiency at 1960 MHz under 28 Vdc, 550 mA quiescent bias, with integrated ESD protection and internal input/output matching.

For engineers reviewing the MRF8P20165WHSR5 datasheet, MRF8P20165WHSR5 pinout, MRF8P20165WHSR5 application, or MRF8P20165WHSR5 equivalent, key selection criteria include its 190 W P3dB compression point, 100 MHz VBW resonance, 65 MHz signal bandwidth capability, symmetrical Doherty characterization, and NI-780-4 package compatibility - all validated per Freescale RF Device Data Rev. 0 (April 2011).

Technical Context

This dual-gate, dual-drain lateral N-channel MOSFET supports symmetrical Doherty amplifier topologies with separate RFinA/VGSA and RFinB/VGSB inputs and RFoutA/VDSA and RFoutB/VDSB outputs. Its gate threshold voltage (1.2–2.7 Vdc) and wide negative gate-source voltage range (–6.0 Vdc) enable stable Class AB/C operation in digital predistortion (DPD) systems.

The device operates across 1880–2025 MHz with 10:1 VSWR ruggedness at 32 Vdc and 1960 MHz, and is characterized using large-signal load-pull parameters and common-source S-parameters. Thermal resistance is 0.53 °C/W at 114°C case temperature under 160 W CW conditions.

Key Specifications

Pinout & Package

Package: NI-780-4 (Case 465M-01, Style 1), thermally enhanced ceramic/metal flange-mount package with exposed drain paddle for direct heatsink attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM906S and MRF8P20140HR5, the MRF8P20165WHSR5 uniquely balances 37 W average output, 47.7% efficiency, and 100 MHz VBW in a production-validated Doherty topology - making it optimal for W-CDMA macrocell upgrades requiring minimal redesign.

Availability

MRF8P20165WHSR5 is available at Aetrix Electronics and suitable for macrocell base stations, active antenna systems, and 5G sub-6 GHz pre-massive MIMO deployments requiring stable component supply, long-lifecycle support, and RoHS-compliant RF power transistors.

Supply support for MRF8P20165WHSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues its RF power portfolio with focus on cellular infrastructure, automotive radar, and industrial heating.

The MRF8P20165WHSR5 belongs to the MRF8P family of high-efficiency LDMOS transistors designed specifically for wideband, high-PAR wireless infrastructure amplifiers operating from 1.8–2.2 GHz.

FAQ

What is the recommended gate bias voltage for MRF8P20165WHSR5 in Doherty mode?

The MRF8P20165WHSR5 is characterized with VGSB = 1.3 Vdc for the peaking path and VGS(Q) = 2.0–3.5 Vdc for the main path under 28 Vdc, 550 mA IDQA conditions. These values are validated in Freescale's symmetrical Doherty production test fixture and ensure optimal efficiency and linearity. Always verify bias stability across temperature using the ∆G and ∆P1dB coefficients provided in Table 4.

Does MRF8P20165WHSR5 require external matching networks?

No - the MRF8P20165WHSR5 is internally matched for both input and output across 1930–1995 MHz, as confirmed in Figure 1 and Table 4 notes. This eliminates discrete matching components in standard 50 Ω systems, though narrowband optimization may use the load-pull impedances in Figures 16–17. The NI-780-4 package integrates the matching structure directly into the die layout.

What is the thermal resistance (RθJC) of MRF8P20165WHSR5 under full-power operation?

The MRF8P20165WHSR5 has a thermal resistance of 0.53 °C/W when operating at 160 W CW, 114°C case temperature, 28 Vdc, and 550 mA IDQA (Table 2). This value is measured per AN1955 methodology and assumes proper mounting to a flat, smooth heatsink with ≤0.5 N·m screw torque and thermal interface material. Exceeding 125°C case temperature risks reliability degradation.

Can MRF8P20165WHSR5 be used in push-pull or single-ended configurations?

Yes - although optimized for symmetrical Doherty, the MRF8P20165WHSR5 supports push-pull (Figure 4) and single-ended topologies. Its dual-gate/dual-drain structure allows independent control, but gain and efficiency will differ: single-ended operation yields ~14.8 dB gain and 44.3% efficiency (Table 4), while push-pull requires careful phase alignment and impedance transformation.

Is MRF8P20165WHSR5 pin-compatible with MRF8P20165WHR3?

Yes - MRF8P20165WHSR5 and MRF8P20165WHR3 share identical pinout (Figure 1), package (NI-780-4 vs. NI-780S-4), and electrical specifications. The "S" suffix denotes the NI-780S-4 variant (Case 465M-01), while "R3" and "R5" indicate tape-and-reel quantities (250 vs. 50 units). No PCB changes are required when substituting between these variants.