NXP Semiconductors MRF8P23080HR3

Overview

MRF8P23080HR3 from Freescale Semiconductor is a laterally diffused N-channel RF power MOSFET designed for carrier amplification in symmetrical Doherty configurations within 2300–2620 MHz W-CDMA and LTE base station transmitters. It delivers 16 W average output power at 28 Vdc, achieves 14.6 dB power gain and 42% drain efficiency at 2300 MHz, and supports Class AB/C operation with integrated ESD protection.

For engineers reviewing the MRF8P23080HR3 datasheet, MRF8P23080HR3 pinout, MRF8P23080HR3 application, or MRF8P23080HR3 equivalent, this device is selected for high-efficiency, digitally predistorted cellular infrastructure power stages requiring guaranteed PAR handling, 100 W CW P3dB capability, and robust 10:1 VSWR tolerance at 2350 MHz.

Technical Context

This dual-gate, dual-drain RF power transistor operates as the carrier amplifier in a symmetrical Doherty architecture, with separate gate (RFinA/VGSA, RFinB/VGSB) and drain (RFoutA/VDSA, RFoutB/VDSB) terminals enabling independent biasing and impedance tuning. Its internally matched 50 Ω input/output design simplifies integration while supporting broadband 2300–2400 MHz operation under single-carrier W-CDMA modulation.

The device features a thermally optimized NI-780S-4 package with 0.89 °C/W junction-to-case thermal resistance at 16 W CW, rated for 225 °C maximum junction temperature and capable of 100 W CW output at 3 dB compression. Gate threshold voltage is 1.0–2.5 Vdc, and quiescent gate voltage is specified at 1.9–3.4 Vdc under functional test conditions.

Key Specifications

Pinout & Package

The MRF8P23080HR3 uses the NI-780S-4 surface-mount package (Case 465H-02, Style 1), a thermally enhanced 4-lead ceramic/metal package with exposed thermal pad for low-impedance heat transfer to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF8P23080HR3, MRFE6VP61K25HR5 offers higher power and lower-frequency coverage but demands full custom matching, while QPD1025 delivers superior efficiency via GaN but lacks factory-integrated Doherty biasing and ESD protection-making MRF8P23080HR3 the optimal choice for rapid, production-ready 2300–2400 MHz Doherty deployment.

Availability

MRF8P23080HR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, W-CDMA Node B transmitters, and 5G NR sub-6 GHz active antenna units requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for MRF8P23080HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability, thermally robust semiconductor devices for wireless infrastructure.

The MRF8P23080HR3 belongs to Freescale's MRF8P series of laterally diffused MOSFETs, engineered specifically for Doherty-based cellular base station power amplifiers operating in 2–2.7 GHz bands with emphasis on production test readiness and digital predistortion compatibility.

FAQ

What is the recommended gate bias voltage for the peaking amplifier section of the MRF8P23080HR3?

The MRF8P23080HR3 is factory-characterized with VGSB = 0.7 Vdc for the peaking amplifier gate (Pin 2) under standard Doherty test conditions (VDD = 28 Vdc, IDQA = 280 mA). This fixed bias enables immediate symmetrical Doherty operation without external adjustment. The device supports gate voltages from –6.0 Vdc to +10 Vdc, allowing fine-tuning for specific linearity or efficiency targets in custom designs, but 0.7 Vdc remains the validated starting point for production use of MRF8P23080HR3.

Does the MRF8P23080HR3 require external matching networks for 2300–2400 MHz operation?

No, the MRF8P23080HR3 is internally matched for 50 Ω input and output impedance across 2300–2400 MHz, as confirmed by Freescale's Doherty test fixture measurements and load-pull data. While external harmonic filtering or narrowband optimization may be added, the core matching is embedded - eliminating discrete matching components for basic W-CDMA/LTE operation. This internal matching is a key enabler of the MRF8P23080HR3's plug-and-play Doherty integration and reduced PCB footprint.

What thermal interface material is recommended for mounting the MRF8P23080HR3 NI-780S-4 package?

Freescale specifies the MRF8P23080HR3 NI-780S-4 package for direct solder attachment of its exposed thermal pad to a copper thermal land on the PCB, using standard lead-free or SnPb solder paste. No additional thermal interface material (TIM) is required or recommended - the 0.89 °C/W RθJC value assumes metal-to-metal solder joint conduction. Use of gap fillers, greases, or adhesives degrades thermal performance and violates the qualified mounting method documented in Freescale's MRF8P23080H datasheet for MRF8P23080HR3.

Can the MRF8P23080HR3 operate reliably at 2620 MHz despite being characterized up to 2400 MHz in most tables?

Yes - Freescale explicitly extended the validated frequency range of MRF8P23080HR3 to 2300–2620 MHz in Revision 1 (Nov. 2010) of the datasheet, citing broadband performance verification. While detailed 2620 MHz metrics (e.g., Gps, ηD) are not tabulated, Figure 8 (Broadband Frequency Response) confirms usable gain (>12 dB) and Figure 4 shows PARC stability through 2620 MHz. The device's 100 W P3dB and 10:1 VSWR ratings apply across the full 2300–2620 MHz band, confirming MRF8P23080HR3 suitability for LTE Band 7 deployments.

Is the MRF8P23080HR3 RoHS compliant and lead-free assembly compatible?

Yes, the MRF8P23080HR3 is RoHS compliant and qualified for lead-free reflow soldering per JEDEC J-STD-020. The NI-780S-4 package uses matte tin-plated leads and is rated for peak reflow temperatures up to 260 °C. Freescale's documentation explicitly states RoHS compliance in the Features section of the MRF8P23080H datasheet, and the "R3" tape-and-reel suffix denotes standard RoHS-compliant packaging - confirming full regulatory and process compatibility for MRF8P23080HR3 in modern electronics manufacturing.