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NXP Semiconductors MRF8P23080HSR3
- Part No.:
- MRF8P23080HSR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S-4L
- Datasheet:
-
MRF8P23080HSR3.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:8,895
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Product details
Overview
MRF8P23080HSR3 from NXP Semiconductors (formerly Freescale) is a 2300–2620 MHz, 16 W average power, 28 V lateral N-channel RF power MOSFET optimized for W-CDMA and LTE base station Doherty amplifier stages. It delivers 14.7 dB power gain, 41.6% drain efficiency, and –31.5 dBc ACPR at 2350 MHz under single-carrier W-CDMA conditions with 7.5 dB PAR input signal.
For engineers reviewing the MRF8P23080HSR3 datasheet, MRF8P23080HSR3 pinout, MRF8P23080HSR3 application, or MRF8P23080HSR3 equivalent, this device requires attention to gate biasing (VGSB = 0.7 Vdc), thermal derating above 25°C, symmetrical Doherty configuration validation, and NI-780S-4 tape-and-reel handling (250 units, 32 mm width, 13″ reel).
Technical Context
This device implements a dual-gate, dual-drain symmetrical Doherty architecture with separate carrier (RFinA/VGSA, RFoutA/VDSA) and peaking (RFinB/VGSB, RFoutB/VDSB) paths. Its internal matching network targets 50 Ω systems across 2300–2400 MHz, enabling direct integration without external impedance transformers in production-ready base station PA modules.
It supports Class AB carrier operation and Class C peaking operation, with verified 100 W CW P3dB compression and 10:1 VSWR tolerance at 32 Vdc. The integrated ESD protection meets HBM Class 2, MM Class A, and CDM Class IV standards per JESD22 test methods.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2300–2620 MHz - Validated broadband operation for LTE Band 40/41 and W-CDMA UMTS 2100 uplink extensions. |
| Avg. Output Power | 16 W - Sustained average output under IQ-clipped single-carrier W-CDMA with 3.84 MHz channel bandwidth and 7.5 dB PAR. |
| Power Gain (Gps) | 14.7 dB @ 2350 MHz - Enables compact two-stage PA designs with minimal driver stage complexity. |
| Drain Efficiency (ηD) | 41.6% @ 2350 MHz - Reduces thermal load and DC power consumption in high-duty-cycle base station deployments. |
| ACPR | –31.5 dBc @ ±5 MHz offset - Meets 3GPP TS 25.104 spectral mask requirements for BTS transmitters without additional filtering. |
| P3dB Compression | 100 W CW - Supports peak envelope power headroom for digital predistortion linearization and burst-mode operation. |
| Junction Temp. Max | 225°C - Allows high-power density packaging with case temperature limits up to 150°C under continuous operation. |
Pinout & Package
Package: NI-780S-4, 4-lead ceramic/metal flange-mount package (Case 465M-01, Style 1), thermally enhanced for RF power dissipation. Mounting surface is electrically connected to drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFoutA / VDSA) | Carrier amplifier drain output | Primary RF output node for carrier path; requires 50 Ω matched output network and thermal via connection to heatsink. |
| 2 (RFoutB / VDSB) | Peaking amplifier drain output | Secondary RF output node for peaking path; must be combined with Pin 1 via quadrature hybrid coupler per Doherty topology. |
| 3 (RFinA / VGSA) | Carrier amplifier gate input | Bias-controlled input for carrier transistor; VGS(Q) = 2.6 V typical at IDQA = 280 mA; requires stable low-noise gate supply. |
| 4 (RFinB / VGSB) | Peaking amplifier gate input | Independent gate bias node for peaking transistor; factory-set VGSB = 0.7 Vdc for Class C operation; not internally tied to Pin 3. |
Key Features
| Feature | Design Value |
|---|---|
| Production-tested symmetrical Doherty configuration | Guarantees balanced carrier-peaking phase/amplitude response without user calibration or tuning. |
| 100% PAR-tested output capability | Every unit validated at 7.5 dB PAR input signal to ensure minimum 16 W average output compliance. |
| Internally matched 50 Ω I/O | Eliminates need for external input/output matching networks in standard 2300–2400 MHz base station layouts. |
| Integrated ESD protection | HBM Class 2, MM Class A, CDM Class IV - Enables robust handling during PCB assembly and field maintenance. |
| Extended negative VGS range | VGS down to –6.0 Vdc - Supports deep Class C peaking bias for improved efficiency and linearity in DPD-enabled systems. |
Applications
| Macrocell Base Station Transmitter | Small Cell Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: High-efficiency final PA stage in 4T4R LTE eNodeB operating in Band 40 (2300–2400 MHz) with 20 MHz channel bandwidth and 64-QAM modulation. IC Role / Device Role / Timing Role: Dual-path Doherty RF power transistor delivering 16 W avg. output per antenna port with digital predistortion support. Use Value: Achieves >41% drain efficiency at rated output while meeting –31.5 dBc ACPR, reducing cooling requirements and OPEX in outdoor macro sites. |
Use Scenario: Compact, thermally constrained RRH module for urban small cell deployment requiring high linearity and low latency. IC Role / Device Role / Timing Role: Symmetrically configured Doherty PA core enabling fast DPD convergence and low memory effect in real-time adaptive algorithms. Use Value: 14.7 dB gain and 100 W P3dB headroom allow single-device coverage of full 2300–2400 MHz band without band-switching, simplifying RF front-end design. |
| W-CDMA Node B Power Amplifier | 5G NR Sub-6 GHz Pre-Massive MIMO PA |
|
Use Scenario: 3G UMTS FDD base station transmitter supporting 15-carrier aggregation with 3.84 MHz chip rate and 7.5 dB PAR. IC Role / Device Role / Timing Role: Production-validated Doherty transistor with guaranteed PAR performance and load-pull characterized Zsource/Zload impedances. Use Value: Eliminates need for post-production RF tuning; 0.1 dB gain flatness over 100 MHz bandwidth ensures uniform channel power across multi-carrier operation. |
Use Scenario: Prototype PA stage for early 5G NR TDD systems operating at 2.3–2.4 GHz with 100 MHz instantaneous bandwidth and OFDM waveforms. IC Role / Device Role / Timing Role: High-PAR-capable RF transistor supporting 10:1 VSWR tolerance and 225°C junction rating for ruggedized outdoor hardware. Use Value: Withstands antenna mismatch events without degradation; enables simplified front-end protection circuitry and extended field reliability in uncontrolled RF environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM906S | 2300–2400 MHz, 12 W avg., 28 V, GaN HEMT; higher gain (16.5 dB), lower efficiency (36%), no integrated ESD diodes. | Requires external ESD protection and gate bias sequencing; better suited for narrowband, high-gain driver stages than wideband Doherty combiners. | Select AFM906S only when higher gain and smaller footprint outweigh need for built-in ESD and Doherty-optimized matching. |
| MRF8P23160HSR3 | Same package and pinout; higher Pout (25 W avg.), same frequency range; 15.1 dB gain, 40.5% efficiency at 2350 MHz; 120 W P3dB. | Designed for higher-output macrocells; requires increased thermal management and higher-current gate drivers due to 420 mA IDQA. | Choose MRF8P23160HSR3 when system-level output requirement exceeds 16 W avg. and board space allows for upgraded heatsinking. |
Compared with MRF8P23080HSR3, AFM906S offers higher gain but demands external protection and lacks Doherty-optimized internal matching, while MRF8P23160HSR3 provides +9 W avg. output in identical footprint but increases thermal and bias supply demands-making MRF8P23080HSR3 optimal for cost-sensitive, thermally constrained 16 W-class base station PA designs.
Availability
MRF8P23080HSR3 is available at Aetrix Electronics and suitable for macrocell base stations, small cell remote radio heads, W-CDMA Node B transmitters, and 5G NR sub-6 GHz pre-massive MIMO systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for MRF8P23080HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications infrastructure markets.
The MRF8P23080HSR3 belongs to NXP's RF Power LDMOS portfolio, engineered specifically for high-efficiency, high-linearity Doherty amplifiers in cellular infrastructure equipment operating from 700 MHz to 3.8 GHz.
FAQ
What is the maximum continuous drain voltage rating for the MRF8P23080HSR3?
The MRF8P23080HSR3 has a maximum drain-source voltage (VDSS) rating of +65 Vdc and –0.5 Vdc. This rating supports safe operation under transient VSWR conditions up to 10:1 at 32 Vdc supply, as confirmed in the Absolute Maximum Ratings table. Exceeding +65 Vdc risks permanent device failure.
Does the MRF8P23080HSR3 require external input/output matching networks?
No, the MRF8P23080HSR3 is internally matched for 50 Ω operation across its 2300–2400 MHz target band. The datasheet confirms full characterization in a symmetrical Doherty test fixture with no external matching components required on gate or drain paths-enabling direct integration into production PA boards.
What is the thermal resistance junction-to-case for the MRF8P23080HSR3 at 16 W CW operation?
At 16 W CW, 28 Vdc, TC = 72°C, the MRF8P23080HSR3 exhibits a thermal resistance (RθJC) of 0.89 °C/W. This value is measured with both carrier and peaking paths active and is critical for heatsink sizing in continuous-duty base station applications.
How is the MRF8P23080HSR3 different from the MRF8P23080HR3 variant?
The MRF8P23080HSR3 uses the NI-780S-4 package (32 mm tape width), while the MRF8P23080HR3 uses NI-780-4 (56 mm tape width); both share identical electrical specs, pinout, and thermal performance. The suffix "S" denotes the narrower tape format for high-density automated placement.
Is the MRF8P23080HSR3 qualified for use in digital predistortion (DPD) systems?
Yes, the MRF8P23080HSR3 is explicitly designed for DPD-enabled transmitters. Its characterized large-signal load-pull parameters, 100% PAR testing, and symmetric Doherty architecture provide predictable memoryless behavior and fast DPD convergence-verified in Freescale's reference test fixtures per AN1955.
MRF8P23080HSR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 2.3GHz
- Gain:
- 14.6dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 280 mA
- Power - Output:
- 16W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-780S-4L
MRF8P23080HSR3 FAQ
1.How can I place an order for MRF8P23080HSR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF8P23080HSR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF8P23080HSR3 reliable?
The price and inventory of MRF8P23080HSR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF8P23080HSR3 is usually 5 days.
3.What payment methods are accepted for MRF8P23080HSR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF8P23080HSR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF8P23080HSR3?
MRF8P23080HSR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF8P23080HSR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF8P23080HSR3?
For technical support, including MRF8P23080HSR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF8P23080HSR3 requirements.
6.How does Aetrix verify that MRF8P23080HSR3 is sourced from the original manufacturer or authorized distributors?
All MRF8P23080HSR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF8P23080HSR3 meets industry standards.
7.What is the process for return or replacement of MRF8P23080HSR3?
All MRF8P23080HSR3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF8P23080HSR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF8P23080HSR3 part is unused and in its original packaging.
Return procedure for MRF8P23080HSR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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