NXP Semiconductors MRF8P23160WHSR3

Overview

MRF8P23160WHSR3 from Freescale Semiconductor is a 2300–2400 MHz, 30 W average output power, N-channel enhancement-mode lateral RF power MOSFET designed for symmetrical Doherty amplifier stages in base station transmitters. It delivers 14.1 dB power gain, 38.3% drain efficiency, and –32.2 dBc ACPR at 2350 MHz under single-carrier W-CDMA conditions (3.84 MHz bandwidth, 9.9 dB PAR), supporting digital predistortion linearization.

For engineers reviewing the MRF8P23160WHSR3 datasheet, MRF8P23160WHSR3 pinout, MRF8P23160WHSR3 application, or MRF8P23160WHSR3 equivalent, this device requires attention to gate biasing (VGSB = 1.2 Vdc), dual-input/dual-output Doherty configuration, thermal derating above 25°C, and NI-780S-4 package handling with 32 mm tape width.

Technical Context

This device operates as a carrier-side transistor in a symmetrical Doherty architecture, with separate RF input (RFinA/VGSA and RFinB/VGSB) and RF output (RFoutA/VDSA and RFoutB/VDSB) terminals. Its internal matching enables 50 Ω system integration without external broadband matching networks.

It supports wide instantaneous bandwidth (100 MHz), handles 10:1 VSWR at 144 W CW, and features integrated ESD protection rated Class 2 HBM. The gate threshold voltage (1.2–2.7 Vdc) and quiescent gate voltage (typ. 2.8 Vdc) are optimized for Class AB/C operation with digital predistortion feedback loops.

Key Specifications

Pinout & Package

Package: NI-780S-4 (Case 465M-01, Style 1), surface-mount ceramic/metal hybrid with exposed thermal pad. Dimensions per Freescale drawing; 32 mm tape width, 250 units/reel (R3 suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM8P23160WHR3, MRF8P23160WHSR3 offers superior thermal performance at high case temperatures (0.43 vs. 0.69°C/W) and narrower tape compatibility; versus QPD1025, it provides proven LDMOS reliability at 28 V with no gate protection overhead, but trades peak power and gain for ease of adoption.

Availability

MRF8P23160WHSR3 is available at Aetrix Electronics and suitable for macro base station transmitters, small cell remote radio heads, WiMAX infrastructure, and DPD-enabled test equipment requiring stable component supply across multi-year production cycles.

Supply support for MRF8P23160WHSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, with decades of LDMOS process expertise and rigorous qualification for telecom applications.

The MRF8P23160WHSR3 belongs to Freescale's MRF8P family of high-efficiency, broadband RF power transistors engineered specifically for Doherty-based base station PAs operating in 1.8–2.7 GHz bands.

FAQ

What is the recommended gate bias configuration for MRF8P23160WHSR3 in Doherty operation?

The MRF8P23160WHSR3 requires two independent gate biases: VGSA ≈ 2.8 Vdc for the carrier path (Pin 1) and VGSB = 1.2 Vdc for the peaking path (Pin 2). These values are validated in Freescale's symmetrical Doherty test fixture and ensure optimal gain balance and efficiency tracking. Deviations beyond ±0.1 Vdc degrade PAR handling and ACPR performance. The MRF8P23160WHSR3 datasheet specifies fixture gate quiescent voltage (VGGA(Q)) as 4.1–7.1 Vdc due to on-board resistor divider networks, but actual device-level VGS must remain within the stated range.

Does MRF8P23160WHSR3 require external output matching networks?

No, the MRF8P23160WHSR3 is internally matched for 50 Ω systems at 2300–2400 MHz, eliminating the need for discrete output matching components in standard Doherty implementations. Freescale characterizes the device with Zload = 5.58–j10.3 Ω (2300 MHz) to 5.96–j10.5 Ω (2400 MHz) for maximum P1dB, and these impedances are realized through integrated passive structures. External matching is only required for non-standard load conditions or harmonic suppression.

What thermal derating applies to MRF8P23160WHSR3 above 25°C case temperature?

The MRF8P23160WHSR3 has a thermal resistance of 0.43°C/W at 101°C case temperature (per Table 2), meaning its safe continuous-wave power must be reduced by 0.43 W per °C rise above 25°C. At TC = 80°C, the derated CW limit is 129 W (from 129 W @ 25°C with 0.48 W/°C slope), and junction temperature must not exceed 225°C. Proper heatsinking and airflow are essential to maintain TC ≤ 101°C for full 144 W CW capability.

Can MRF8P23160WHSR3 be used in non-Doherty Class AB amplifiers?

Yes, the MRF8P23160WHSR3 functions as a high-gain, high-efficiency RF power transistor in Class AB configurations, though its internal matching and characterization emphasize Doherty use. At 2350 MHz, it delivers 14.1 dB gain and 38.3% efficiency at 30 W avg. in single-ended mode. However, its dual-gate/dual-drain structure is optimized for Doherty signal combining; standalone use forfeits the 100 MHz bandwidth advantage and requires re-optimization of input/output impedance for best P1dB.

What ESD protection level does MRF8P23160WHSR3 provide, and how is it verified?

The MRF8P23160WHSR3 incorporates integrated ESD protection rated Class 2 per JESD22-A114 (2 kV HBM), Class B per EIA/JESD22-A115 (machine model), and Class IV per JESD22-C101 (charge device model). This is confirmed through wafer-level and final-test screening per Freescale's qualified process flow. The protection circuitry is monolithically integrated and does not require external TVS diodes, simplifying layout and improving reliability in automated assembly environments where static discharge risk is elevated.