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NXP Semiconductors MRF8S18120HSR5
- Part No.:
- MRF8S18120HSR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S
- Datasheet:
-
MRF8S18120HSR5.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:5,879
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Product details
Overview
MRF8S18120HSR5 from NXP Semiconductors (formerly Freescale) is a laterally diffused metal-oxide-semiconductor (LDMOS) RF power transistor designed for GSM and GSM EDGE base station final-stage amplification in the 1805–1880 MHz band. It delivers 72 W CW output at 28 V, achieves 18.7 dB power gain and 53.9% drain efficiency at 1880 MHz, and supports Class AB/C operation with internal input/output matching.
For engineers reviewing the MRF8S18120HSR5 datasheet, MRF8S18120HSR5 pinout, MRF8S18120HSR5 application, or MRF8S18120HSR5 equivalent, key selection criteria include its 120 W P1dB compression point, 7:1 VSWR ruggedness at 32 V, integrated ESD protection (HBM Class 2), thermal resistance of 0.46 °C/W at 120 W CW, and suitability for Doherty amplifier architectures.
Technical Context
This device is an enhancement-mode N-channel LDMOS transistor optimized for high-efficiency, high-linearity cellular infrastructure amplifiers. Its internally matched 50 Ω input and output enable simplified PCB layout, while the wide negative gate-source voltage range (–6.0 V) enhances Class C stability and efficiency.
The MRF8S18120HSR5 operates with 800 mA quiescent drain current at 28 V, exhibits 0.5 dB gain flatness over 75 MHz bandwidth, and maintains <0.01 dB/°C gain variation from –30°C to +85°C - enabling stable performance across environmental extremes in outdoor macro base stations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz - precisely covers GSM-1800 uplink and EDGE-1800 bands used in ETSI-compliant base stations. |
| Output Power (CW) | 72 W @ 28 V, 800 mA IDQ - sufficient for single-carrier GSM macrocell final stage with headroom for envelope tracking. |
| P1dB Compression | 120 W CW - enables high peak-to-average power ratio (PAPR) signal handling without clipping in EDGE modulation. |
| Drain Efficiency | 53.9% @ 1880 MHz, 72 W - reduces thermal load and power supply requirements in energy-sensitive remote radio units. |
| VSWR Ruggedness | 7:1 @ 32 V, 1840 MHz - withstands antenna mismatch events without failure, critical for unattended outdoor deployments. |
| Thermal Resistance | 0.46 °C/W (junction-to-case, 120 W CW) - supports compact heatsink design with ≤100°C case temperature under full load. |
| ESD Rating | HBM Class 2 (≥2 kV), MM Class A - ensures robustness during board assembly and field maintenance without external protection circuits. |
Pinout & Package
Package: NI-780S (Case 465A-06, Style 1), thermally enhanced ceramic/metal flanged package with isolated source tab and solderable baseplate for direct thermal mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-power RF output node | Electrically and thermally connected to package baseplate; requires low-inductance RF grounding and heatsinking. |
| Source (Tab) | RF common reference / DC return | Isolated from drain; must be DC-grounded via low-impedance path to minimize parasitic inductance in high-frequency paths. |
| Gate | RF input control terminal | High-impedance MOS gate; requires stable bias network and ESD-protected routing; operates at 1.8–3.3 VDC quiescent voltage. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched I/O | Eliminates external matching networks for 50 Ω systems - reduces bill-of-materials and layout complexity in multi-carrier PA designs. |
| Doherty-optimized topology | Enables efficient carrier/peaking amplifier implementation with minimal phase/gain alignment effort in modern LTE/5G-ready base stations. |
| 7:1 VSWR ruggedness | Allows operation into severe antenna mismatches without derating or protection circuitry - improves system uptime in real-world RF environments. |
| GSM EDGE linearity | EVM ≤2.0% rms at 46 W avg. output - meets ETSI EN 300 910 spectral mask and adjacent channel leakage requirements. |
| RoHS-compliant packaging | NI-780S package uses lead-free solderable terminations and halogen-free molding compound - compliant with EU Directive 2011/65/EU. |
Applications
| GSM Macrocell Transmitter | EDGE Base Station Final Stage |
|---|---|
|
Use Scenario: High-power uplink transmission in urban macrocell sites operating on 1805–1880 MHz band. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 72 W CW output per carrier with Class AB bias. Use Value: Delivers 53.9% drain efficiency at 1880 MHz, reducing cooling demands and AC power draw in cabinet-constrained sites. |
Use Scenario: Multi-carrier EDGE base station supporting 8-PSK modulation with 46 W average output per carrier. IC Role / Device Role / Timing Role: Linearized RF power transistor operating in Class AB with digital pre-distortion feedback loop. Use Value: Achieves 1.7% EVM at 1840 MHz, meeting ETSI spectral regrowth limits (–63 dBc @ 400 kHz) without external linearization. |
| Doherty Amplifier Carrier Path | Ruggedized Remote Radio Head |
|
Use Scenario: Carrier amplifier in asymmetric Doherty configuration for broadband 1800 MHz band coverage. IC Role / Device Role / Timing Role: High-efficiency, high-gain main amplifier biased at 800 mA IDQ with optimized gate voltage swing. Use Value: Provides 18.6 dB gain flatness (±0.5 dB) across 75 MHz bandwidth - simplifies combiner design and improves bandwidth scalability. |
Use Scenario: Outdoor-mounted RRH requiring high reliability under temperature cycling and lightning-induced VSWR stress. IC Role / Device Role / Timing Role: Primary RF power transistor rated for 225°C junction temperature and 7:1 VSWR survival. Use Value: Survives repeated 7:1 mismatch events at 32 V without parameter shift - eliminates need for circulators or VSWR foldback logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PD85018-E | Lower P1dB (100 W), higher gain (19.5 dB), 28 V only - no 32 V operation or 7:1 VSWR rating. | Optimized for narrowband GSM; lacks Doherty-specific optimization and EDGE EVM validation. | Select when prioritizing gain over ruggedness and operating strictly within 28 V systems. |
| AFM906S | Wider bandwidth (1710–2170 MHz), lower efficiency (48% @ 1950 MHz), same NI-780S package. | Targets multi-band LTE; requires external matching and has higher thermal resistance (0.52 °C/W). | Select when needing contiguous 1.7–2.2 GHz coverage and accepting 5% efficiency penalty for flexibility. |
Compared with PD85018-E and AFM906S, the MRF8S18120HSR5 offers superior VSWR ruggedness and Doherty-optimized linearity for 1800 MHz GSM/EDGE macrocells, while maintaining identical NI-780S mechanical compatibility and thermal performance at full 120 W P1dB.
Availability
MRF8S18120HSR5 is available at Aetrix Electronics and suitable for GSM macrocell transmitters, EDGE base station final stages, Doherty carrier amplifiers, and ruggedized remote radio heads requiring stable component supply across extended production lifecycles.
Supply support for MRF8S18120HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance RF power solutions for wireless infrastructure, automotive radar, and industrial applications.
The MRF8S18120HSR5 belongs to NXP's LDMOS RF power transistor family engineered specifically for energy-efficient, spectrally clean cellular base station amplifiers operating in licensed sub-3 GHz bands.
FAQ
What is the maximum continuous drain voltage rating for the MRF8S18120HSR5?
The MRF8S18120HSR5 has a maximum continuous drain-source voltage (VDSS) rating of +65 Vdc and –0.5 Vdc. This allows safe operation at 32 Vdc supply with margin for transient spikes, making it suitable for base station power supplies with regulated 28 V or 32 V rails. The MRF8S18120HSR5 is rated for 32 Vdc operating voltage per Freescale Semiconductor's maximum ratings table.
Does the MRF8S18120HSR5 require external input/output matching networks?
No - the MRF8S18120HSR5 is internally matched for 50 Ω operation at both input and output ports, as confirmed in the "Features" section and functional test conditions. This eliminates discrete matching components in standard 50 Ω systems, reducing PCB area and insertion loss. The MRF8S18120HSR5 achieves –11 dB input return loss at 1805 MHz without external tuning.
What is the thermal resistance junction-to-case for the MRF8S18120HSR5 at full power?
The MRF8S18120HSR5 has a thermal resistance (RθJC) of 0.46 °C/W when operating at 120 W CW output, as specified in Table 2 of the datasheet. This value is measured at case temperature 79°C and reflects the device's ability to transfer heat efficiently from die to heatsink - critical for thermal management in compact macrocell PA modules.
Can the MRF8S18120HSR5 be used in Class C mode for GSM applications?
Yes - the MRF8S18120HSR5 is explicitly characterized for Class C operation in GSM base station applications, enabled by its extended negative gate-source voltage range (–6.0 V). This allows deeper cutoff and higher efficiency in constant-envelope GSM signals, with documented performance at 72 W CW and 53.9% drain efficiency at 1880 MHz. The MRF8S18120HSR5 datasheet confirms Class C capability in the opening application description.
What ESD protection level does the MRF8S18120HSR5 provide?
The MRF8S18120HSR5 provides Human Body Model (HBM) Class 2 ESD protection (≥2 kV), Machine Model (MM) Class A, and Charge Device Model (CDM) Class IV, as verified in Table 3 of the official datasheet. This level of integrated protection eliminates the need for external ESD diodes in most RF front-end layouts, simplifying design and improving reliability during handling and reflow.
MRF8S18120HSR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.81GHz
- Gain:
- 18.2dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 800 mA
- Power - Output:
- 72W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780S
MRF8S18120HSR5 FAQ
1.How can I place an order for MRF8S18120HSR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF8S18120HSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF8S18120HSR5 reliable?
The price and inventory of MRF8S18120HSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF8S18120HSR5 is usually 5 days.
3.What payment methods are accepted for MRF8S18120HSR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF8S18120HSR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF8S18120HSR5?
MRF8S18120HSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF8S18120HSR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF8S18120HSR5?
For technical support, including MRF8S18120HSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF8S18120HSR5 requirements.
6.How does Aetrix verify that MRF8S18120HSR5 is sourced from the original manufacturer or authorized distributors?
All MRF8S18120HSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF8S18120HSR5 meets industry standards.
7.What is the process for return or replacement of MRF8S18120HSR5?
All MRF8S18120HSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF8S18120HSR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF8S18120HSR5 part is unused and in its original packaging.
Return procedure for MRF8S18120HSR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF8S18120HSR5 Tags
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