NXP Semiconductors MRF8S21100HSR3

Overview

MRF8S21100HSR3 from NXP Semiconductors (formerly Freescale) is a lateral N-channel RF power MOSFET designed for W-CDMA and LTE base station power amplifiers operating at 2110–2170 MHz. It delivers 24 W average output power at 28 Vdc, 700 mA quiescent drain current, with 18.3 dB typical power gain and 33.4% drain efficiency at 2170 MHz under single-carrier W-CDMA conditions.

For engineers reviewing the MRF8S21100HSR3 datasheet, MRF8S21100HSR3 pinout, MRF8S21100HSR3 application, or MRF8S21100HSR3 equivalent, key selection criteria include its 100 W CW P1dB capability, 10:1 VSWR ruggedness at 32 Vdc, internally matched 50 Ω input/output, integrated ESD protection (HBM Class 2), and Doherty-optimized large-signal impedance characteristics.

Technical Context

This device operates as a high-efficiency RF power amplifier stage in macrocell and remote radio head (RRH) transmitters. Its lateral LDMOS structure supports Class AB and Class C operation, with gate threshold voltage of 1.2–2.7 Vdc and gate-source leakage <1 μAdc at 5 Vdc.

The MRF8S21100HSR3 is characterized using series-equivalent large-signal impedance parameters (e.g., Z_source = 4.33 – j4.54 Ω, Z_load = 2.75 – j2.94 Ω at 2140 MHz) and common-source S-parameters, enabling accurate broadband matching network design across the 2110–2170 MHz band.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465A-06, Style 1), thermally enhanced ceramic/metal flange-mount package with solderable source tab and isolated drain flange. Thermal resistance R_θJC = 0.45 °C/W at 100 W CW.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF8S21100HSR3, MRF8S21100HR3 demands mechanical redesign for mounting, while AFM906S trades 40 W P1dB headroom for wider frequency coverage-making MRF8S21100HSR3 optimal for dedicated Band I macrocell PAs needing maximum linear output power and ruggedness.

Availability

MRF8S21100HSR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, Doherty amplifier modules, and W-CDMA/LTE test equipment requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MRF8S21100HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, with deep heritage in cellular infrastructure semiconductor design dating to its Freescale acquisition.

The MRF8S21100HSR3 belongs to NXP's MRF8S family of laterally diffused MOSFETs engineered specifically for energy-efficient, rugged, and linear W-CDMA/LTE base station power amplifiers operating at 28 Vdc.

FAQ

What is the maximum continuous drain current rating for the MRF8S21100HSR3?

The MRF8S21100HSR3 does not specify a maximum continuous drain current (I_D) rating independently; instead, its safe operating area is defined by junction temperature (T_J ≤ 225 °C), case temperature (T_C ≤ 150 °C), and derated power (108 W at T_C = 25 °C, decreasing by 0.57 W/°C above 25 °C). At 28 Vdc and 700 mA quiescent current, it delivers 24 W average output in W-CDMA operation.

Does the MRF8S21100HSR3 require external matching networks?

No-the MRF8S21100HSR3 is internally matched for 50 Ω input and output impedance across 2110–2170 MHz, as confirmed by measured S-parameters and series-equivalent impedance data (e.g., Z_source = 4.33 – j4.54 Ω, Z_load = 2.75 – j2.94 Ω at 2140 MHz). External matching is optional for fine-tuning gain flatness or harmonic suppression.

What is the gate bias configuration required for MRF8S21100HSR3 in Class AB operation?

For Class AB operation at 700 mA quiescent drain current, the MRF8S21100HSR3 requires V_GS(Q) = 2.7 Vdc (typical), supplied via an external resistive divider that sets V_GG(Q) = 4.0–7.0 Vdc. This configuration stabilizes I_DQ against process and temperature variation while maintaining linearity for W-CDMA signals.

How does the MRF8S21100HSR3 support digital predistortion (DPD) linearization?

The MRF8S21100HSR3 supports DPD through guaranteed 100% PAR testing, characterized large-signal impedance parameters, and optimized linearity metrics: ACPR = –37.2 dBc at 24 W avg., IMD symmetry >40 MHz, and VBW resonance at 50 MHz. These enable accurate behavioral modeling and effective real-time correction of memory effects in closed-loop DPD systems.

What thermal interface requirements apply to the MRF8S21100HSR3 package?

The MRF8S21100HSR3 uses the NI-780 package with a solderable source tab and isolated drain flange. For optimal thermal performance, the source tab must be soldered to a copper thermal pad on a 2-oz FR4 or metal-core PCB, with thermal vias connecting to internal ground planes. R_θJC = 0.45 °C/W is measured at T_C = 80 °C, 100 W CW, so heatsink interface resistance must be ≤0.3 °C/W to maintain T_J < 200 °C.