NXP Semiconductors MRF8S21200HR6

Overview

MRF8S21200HR6 from Freescale Semiconductor is a laterally diffused N-channel enhancement-mode RF power MOSFET designed for W-CDMA and LTE base station final-stage amplification in the 2110–2170 MHz band. It delivers 48 W average output power at 28 Vdc, 1400 mA quiescent drain current, with 18.1 dB typical power gain and 32.6% drain efficiency under single-carrier W-CDMA conditions (3.84 MHz bandwidth, 7.5 dB PAR). It supports Class AB and Class C operation in digital predistortion-corrected cellular infrastructure transmitters.

For engineers reviewing the MRF8S21200HR6 datasheet, MRF8S21200HR6 pinout, MRF8S21200HR6 application, or MRF8S21200HR6 equivalent, key selection criteria include guaranteed 10:1 VSWR ruggedness at 250 W CW, internally matched 50 Ω input/output impedance, integrated ESD protection (HBM Class 2), and validated performance across temperature (−30°C to +85°C) and frequency (2110–2170 MHz).

Technical Context

The MRF8S21200HR6 operates as a common-source RF power amplifier stage with gate-controlled lateral conduction. Its large-signal S-parameters and series-equivalent source/load impedances are fully characterized at 2110–2170 MHz, enabling precise matching network design. Internally matched architecture eliminates external input/output tuning components in standard 50 Ω systems.

It features a −6.0 V to +10 V gate-source voltage range and −0.5 V to +65 V drain-source rating, supporting robust Class C biasing and transient overvoltage tolerance. Thermal resistance is 0.31 °C/W (junction-to-case) at 48 W CW, with maximum junction temperature rated at 225 °C and case temperature limited to 150 °C.

Key Specifications

Pinout & Package

Package: NI-1230 (Case 375D-05, Style 1), ceramic/metal flanged package with solderable baseplate for direct thermal mounting. Dimensions: 14.2 × 14.2 × 4.2 mm (L × W × H), 4-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with NXP MRFE6VP6300HR5 and Ampleon BLF8G27LS-250P, the MRF8S21200HR6 offers superior integration (internal 50 Ω match, Class 2 ESD), tighter gain flatness (0.4 dB over 60 MHz), and simpler thermal interface-making it optimal for cost-sensitive, volume-produced LTE Band 1 RRH modules where time-to-market and assembly yield are critical.

Availability

MRF8S21200HR6 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, active antenna systems, and LTE small cells requiring stable component supply, full traceability, and lifecycle continuity support.

Supply support for MRF8S21200HR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, with deep expertise in LDMOS and GaN transistor design, thermal modeling, and cellular baseband integration.

The MRF8S21200HR6 belongs to Freescale's MRF8S family of internally matched RF power MOSFETs, engineered specifically for W-CDMA/LTE base station final amplifiers demanding high linearity, ruggedness, and simplified RF layout.

FAQ

What is the maximum continuous drain current rating for the MRF8S21200HR6?

The MRF8S21200HR6 does not specify a standalone maximum continuous drain current rating. Instead, its safe operating area is defined by simultaneous limits: 200 W CW at 25°C ambient, derating linearly at 1.6 W/°C above 25°C, with maximum case temperature capped at 150°C and junction temperature at 225°C. At 28 Vdc and 1400 mA IDQ, the MRF8S21200HR6 delivers 48 W average output under W-CDMA modulation-this quiescent current is validated for reliable long-term operation within thermal constraints.

Does the MRF8S21200HR6 require external matching components in a 50 Ω system?

No, the MRF8S21200HR6 is internally matched for both input and output to 50 Ω across 2110–2170 MHz, as confirmed in Table 4 and Figure 10 of the official datasheet. Freescale's reference test circuit (Table 5) uses only DC blocking, bypass, and bias network components-no RF matching inductors or capacitors are needed. This internal matching reduces design risk, layout area, and production calibration steps for MRF8S21200HR6-based amplifiers.

What is the ACPR performance of the MRF8S21200HR6 under LTE signal conditions?

The MRF8S21200HR6 achieves −37.1 dBc adjacent channel power ratio at 2140 MHz with 48 W average output, measured using single-carrier W-CDMA (3.84 MHz bandwidth, 7.5 dB PAR, ±5 MHz offset)-a condition representative of LTE Resource Block (RB) modulation. While the datasheet does not list LTE-specific ACPR, this W-CDMA result correlates strongly with LTE 20 MHz signals due to identical crest factor and bandwidth scaling behavior. The MRF8S21200HR6 meets 3GPP TS 36.104 ACPR requirements for LTE Category A base stations.

Can the MRF8S21200HR6 be used in Class C mode for higher efficiency?

Yes, the MRF8S21200HR6 supports Class C operation, enabled by its extended −6.0 V gate-source voltage rating and optimized gate structure for deep cutoff biasing. The datasheet explicitly states "Designed for Class AB and Class C" and highlights "Greater Negative Gate-Source Voltage Range for Improved Class C Operation" as a key feature. When biased below pinch-off, the MRF8S21200HR6 maintains stable operation and delivers improved drain efficiency-validated in pulsed-CW load-pull data (Figure 11) up to 279 W P3dB.

What is the thermal resistance (RθJC) of the MRF8S21200HR6 under actual operating conditions?

The MRF8S21200HR6 has a junction-to-case thermal resistance of 0.31 °C/W when operating at 48 W CW, 28 Vdc, and 1400 mA IDQ with case temperature stabilized at 76°C (Table 2). Under higher-power 200 W CW conditions at 81°C case temperature, RθJC improves to 0.27 °C/W due to enhanced thermal spreading. These values are measured per AN1955 methodology and reflect real-world mounting on copper-plated heatsinks-enabling accurate thermal simulation for MRF8S21200HR6-based PA modules.