NXP Semiconductors MRF8S21200HSR6

Overview

MRF8S21200HSR6 from NXP Semiconductors (formerly Freescale) is a lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA and LTE base station final-stage amplification in the 2110–2170 MHz band. It delivers 48 W average output power at 28 Vdc, 1400 mA quiescent drain current, with 18.1 dB typical power gain and 32.6% drain efficiency under single-carrier W-CDMA conditions. Its integrated ESD protection and internal input/output matching support robust, simplified PA design in macrocell infrastructure.

For engineers reviewing the MRF8S21200HSR6 datasheet, MRF8S21200HSR6 pinout, MRF8S21200HSR6 application, or MRF8S21200HSR6 equivalent, key selection criteria include guaranteed 10:1 VSWR tolerance at 250 W CW, −6.0 to +10 V gate-source voltage range, RoHS-compliant NI-1230S package, and digital predistortion compatibility for linearized cellular transmission.

Technical Context

This device operates as a Class AB or Class C RF power amplifier stage with internally matched 50 Ω input and output impedance. Its lateral LDMOS structure enables high ruggedness, supporting 65 Vdc drain-source voltage and 225 °C junction temperature operation.

The MRF8S21200HSR6 is characterized using series-equivalent large-signal impedance parameters and common-source S-parameters at 2110–2170 MHz. It features a −6.0 to +10 Vdc gate-source voltage range optimized for improved Class C linearity and is 100% PAR-tested to guarantee 48 W avg. output power capability under W-CDMA modulation.

Key Specifications

Pinout & Package

Package: NI-1230S (Case 375E-04), thermally optimized ceramic/metal flange package with solderable baseplate and 4-terminal configuration. Designed for low-inductance RF grounding and high-power thermal dissipation via direct-mount heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF8S21200HR6, the MRF8S21200HSR6 provides superior thermal resistance (0.27 vs. 0.31 °C/W) for higher power density in space-constrained RRHs; versus AFM905S, it trades 7 W higher Pout for guaranteed internal matching, better ACPR, and lower design risk in production base stations.

Availability

MRF8S21200HSR6 is available at Aetrix Electronics and suitable for macrocell base stations, LTE Band 1 transmitters, and remote radio heads requiring stable component supply, long lifecycle assurance, and high-reliability RF power delivery.

Supply support for MRF8S21200HSR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets. Formerly Freescale Semiconductor, it acquired the RF Power portfolio in 2015.

The MRF8S21200HSR6 belongs to NXP's high-power LDMOS transistor family, engineered specifically for cellular infrastructure amplifiers demanding ruggedness, linearity, and thermal efficiency in 3G/4G base station applications.

FAQ

What is the maximum continuous drain current rating for the MRF8S21200HSR6?

The MRF8S21200HSR6 does not specify a standalone maximum continuous drain current rating. Instead, its safe operating area is defined by junction temperature (225 °C max), case temperature (150 °C max), and thermal resistance (0.27 °C/W). Under typical 48 W avg. operation at 28 Vdc and 1400 mA IDQ, the device remains within thermal limits when properly heatsunk - confirming that 1400 mA is the validated quiescent operating point, not a maximum rating.

Does the MRF8S21200HSR6 require external matching networks?

No, the MRF8S21200HSR6 is internally matched for 50 Ω input and output impedance across 2110–2170 MHz. The datasheet confirms "Part internally matched both on input and output" and provides measured input return loss (−15 dB typ.) and output load impedances (e.g., 1.39 − j2.03 Ω @ 2140 MHz), enabling direct integration into 50 Ω systems without discrete matching components.

What is the ACPR performance of the MRF8S21200HSR6 under W-CDMA conditions?

The MRF8S21200HSR6 achieves −37.1 dBc adjacent channel power ratio (ACPR) at 2140 MHz under single-carrier W-CDMA conditions: 48 W avg. output, 28 Vdc, 1400 mA IDQ, 3.84 MHz channel bandwidth, and 7.5 dB PAR input signal. This value is measured at ±5 MHz offset and reflects the device's linearity when used with digital predistortion - a key specification for cellular base station compliance.

How does the MRF8S21200HSR6 handle antenna VSWR mismatch?

The MRF8S21200HSR6 is rated for 10:1 VSWR at 250 W CW output power, 32 Vdc, and 2140 MHz with 3 dB input overdrive. This ruggedness stems from its lateral LDMOS structure and gate protection design, allowing continued operation - not just survival - during severe antenna mismatches common in outdoor macrocell deployments, eliminating need for external circulators in many RRU designs.

Is the MRF8S21200HSR6 pin-compatible with the MRF8S21200HR6?

Yes, the MRF8S21200HSR6 and MRF8S21200HR6 share identical pinout (4-terminal RFin/RFin/RFout/RFout configuration) and electrical specifications, differing only in package variant: HSR6 uses NI-1230S (Case 375E-04) with 0.27 °C/W RθJC, while HR6 uses NI-1230 (Case 375D-05) with 0.31 °C/W RθJC. Layouts designed for HR6 can accommodate HSR6 without modification, though thermal performance improves with the HSR6 variant.