NXP Semiconductors MRF8S9170NR3

Overview

MRF8S9170NR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA and W-CDMA base station amplifiers operating at 920–960 MHz. It delivers 50 W average output power at 28 V, achieves 19.3 dB power gain and 36.5% drain efficiency under single-carrier W-CDMA conditions, and supports Class AB/C operation with integrated ESD protection and internal input/output matching.

For engineers reviewing the MRF8S9170NR3 datasheet, MRF8S9170NR3 pinout, MRF8S9170NR3 application, or MRF8S9170NR3 equivalent, key selection criteria include its 177 W CW P1dB compression point, 10:1 VSWR ruggedness rating at 32 V, 225°C junction temperature capability, and optimized performance for digital predistortion and Doherty amplifier architectures.

Technical Context

This device operates as a high-efficiency RF power transistor in common-source configuration, with gate threshold voltage of 1.5–3.0 V and gate quiescent voltage of 2.3–3.8 V at 1000 mA IDQ. Its large-signal impedance parameters are characterized across 920–960 MHz, supporting broadband matching networks using series-equivalent Zsource and Zload data.

The MRF8S9170NR3 features internally matched 50 Ω input and output ports, enabling simplified integration into multi-carrier and wideband cellular infrastructure designs. Its thermal resistance RθJC is 0.33 °C/W at 170 W CW, and it is qualified to MSL Level 3 per J-STD-020 with peak reflow temperature of 260 °C.

Key Specifications

Pinout & Package

Package: Case 2021–03, Style 1 (OM–780–2), 225°C-capable plastic overmolded package with 4 exposed source tabs for low-inductance grounding and thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF8S9170N (bulk version), the MRF8S9170NR3 offers automated placement readiness via 250-unit 32 mm tape-and-reel packaging, while AFM917S provides a second-source option with comparable ruggedness but marginally reduced compression headroom and thermal performance.

Availability

MRF8S9170NR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, CDMA infrastructure equipment, and digital predistortion test platforms requiring stable component supply, long-term lifecycle support, and RoHS-compliant high-power RF transistors.

Supply support for MRF8S9170NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology inherited from Freescale.

The MRF8S9170NR3 belongs to NXP's high-efficiency LDMOS RF power transistor product line, engineered specifically for 3G/4G cellular infrastructure amplifiers demanding high linearity, ruggedness, and thermal reliability in 700–1000 MHz bands.

FAQ

What is the maximum continuous drain voltage rating for the MRF8S9170NR3?

The MRF8S9170NR3 has a maximum drain-source voltage rating (VDSS) of +70 Vdc and –0.5 Vdc, with an absolute maximum operating voltage (VDD) of +32 Vdc. This allows safe operation in 28 V base station supplies with transient margin, and the device is rated for 10:1 VSWR survival at 32 Vdc and 940 MHz without failure.

Does the MRF8S9170NR3 require external input/output matching networks?

No - the MRF8S9170NR3 is internally matched for 50 Ω operation on both input and output, as confirmed in Table 5 footnote and Figure 9 impedance data. While external matching may be used for fine-tuning in specific applications, the MRF8S9170NR3 delivers specified gain, efficiency, and linearity in Freescale's reference test circuit without added matching components.

What is the thermal resistance junction-to-case for the MRF8S9170NR3 at full power?

The MRF8S9170NR3 exhibits a thermal resistance RθJC of 0.33 °C/W when operating at 170 W CW, 28 Vdc, and 1000 mA IDQ with case temperature at 82°C. This value is measured per AN1955 methodology and enables precise junction temperature estimation for thermal design validation in real-world macrocell deployments.

Is the MRF8S9170NR3 suitable for Doherty amplifier configurations?

Yes - the MRF8S9170NR3 is explicitly optimized for Doherty applications, featuring enhanced negative gate-source voltage range for improved Class C peaking operation and rugged 10:1 VSWR tolerance. Its characterized large-signal impedances and broadband gain flatness (0.32 dB over 40 MHz) support stable main/peaking transistor co-design in asymmetric Doherty architectures.

What ESD protection level does the MRF8S9170NR3 meet?

The MRF8S9170NR3 meets HBM Class 2 (≥2 kV), Machine Model Class A (≥200 V), and CDM Class IV (≥1000 V) per JESD22-A114/A115/C101. This level of integrated ESD protection eliminates the need for external TVS diodes in standard PCB layouts and supports robust manufacturing handling under MSL Level 3 reflow conditions.