NXP Semiconductors MRF8S9260HSR3

Overview

MRF8S9260HSR3 from NXP Semiconductors (formerly Freescale) is a 920–960 MHz, 75 W average power, 28 V lateral N-channel RF power MOSFET optimized for CDMA and multicarrier GSM base station amplifiers. It delivers 18.6 dB power gain, 38.5% drain efficiency, and –37.1 dBc ACPR at 960 MHz under single-carrier W-CDMA conditions (75 W avg., 3.84 MHz BW, 7.5 dB PAR), supporting Class AB/C operation in macrocell Doherty PA stages.

For engineers reviewing the MRF8S9260HSR3 datasheet, MRF8S9260HSR3 pinout, MRF8S9260HSR3 application, or MRF8S9260HSR3 equivalent, key selection criteria include ruggedness (7:1 VSWR tolerance at 32 Vdc), 260 W CW P1dB, integrated ESD protection (HBM Class 1C), and tape-and-reel packaging (250 units/reel, R3 suffix).

Technical Context

This device employs an enhancement-mode LDMOS structure with internally matched input/output networks, enabling direct integration into 50 Ω systems without external matching. Its gate threshold voltage (1.5–3.0 V) and wide negative gate-source voltage range (–6.0 V) support stable Class C biasing and robust overdrive handling.

Thermal design is enabled by low junction-to-case thermal resistance (0.31 °C/W at 265 W CW), validated via Freescale AN1955 methodology. The device is characterized using series-equivalent large-signal impedance parameters (e.g., Z_source = 1.61 – j2.14 Ω at 960 MHz) and common-source S-parameters for accurate PA modeling.

Key Specifications

Pinout & Package

Package: NI-880 (Case 465B-04), thermally enhanced ceramic/metal flange-mount package with isolated drain tab. Dimensions per Rev. 1 (Feb. 2012): B = 13.59–13.84 mm, H = 1.45–1.70 mm, N = 22.12–22.58 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with CGHV14800F and MRF8P9260HR5, the MRF8S9260HSR3 provides optimal balance of 900 MHz bandwidth, 260 W CW P1dB, and 0.31 °C/W thermal resistance in the NI-880 package-making it the designated solution for high-reliability macrocell base station final PAs where frequency alignment and ruggedness are non-negotiable.

Availability

MRF8S9260HSR3 is available at Aetrix Electronics and suitable for macrocell base station PA design, Doherty amplifier development, and CDMA infrastructure deployment requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for MRF8S9260HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015, inheriting its leadership in cellular infrastructure LDMOS technology with focus on reliability, efficiency, and ruggedness.

The MRF8S9260HSR3 belongs to the MRF8S family of high-power RF transistors engineered specifically for 800–1000 MHz macrocell base station amplifiers demanding high average power, linearity, and field-deployment resilience.

FAQ

What is the maximum continuous drain voltage rating for the MRF8S9260HSR3?

The MRF8S9260HSR3 has a maximum drain-source voltage rating (V_DSS) of +70 Vdc and –0.5 Vdc. This rating enables safe operation at 32 Vdc supply with margin for transient voltage spikes encountered in base station PA stages. Operation beyond +70 Vdc risks permanent device failure and is strictly prohibited per the Absolute Maximum Ratings table.

Does the MRF8S9260HSR3 require external input/output matching networks?

No-the MRF8S9260HSR3 is internally matched for 50 Ω operation across 920–960 MHz. Freescale's test fixture data confirms –14 dB input return loss and stable gain without external matching components. However, gate bias network (R1, C1–C6) and drain decoupling (C7–C21) remain mandatory per Figure 1 and Table 5 for functional validation.

How is ruggedness validated for the MRF8S9260HSR3?

Ruggedness of the MRF8S9260HSR3 is validated per specification: it withstands 7:1 VSWR at 32 Vdc and 940 MHz under CW conditions (380 W), exceeding typical base station antenna mismatch scenarios. This capability is confirmed through production-level VSWR stress testing-not just simulation-and is documented in the "Capable of Handling 7:1 VSWR" feature bullet.

What does the 'R3' suffix indicate in MRF8S9260HSR3?

Per Freescale documentation, the 'R3' suffix in MRF8S9260HSR3 specifies tape-and-reel packaging: 250 units per 56 mm width, 13-inch diameter reel. This format supports automated SMT placement in high-volume telecom equipment manufacturing and differs from 'R5' (500 units) or 'TR' (bulk tray) variants.

Can the MRF8S9260HSR3 be used in Class C operation?

Yes-the MRF8S9260HSR3 features a wider negative gate-source voltage range (–6.0 V) than standard LDMOS devices, explicitly enabling stable Class C biasing for high-efficiency constant-envelope modulation schemes. This is confirmed in the "Features" section and supported by characterization data showing consistent gain and efficiency down to V_GS(Q) = 2.4 Vdc (min).