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NXP Semiconductors MRF8VP13350GNR3
- Part No.:
- MRF8VP13350GNR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780G-4L
- Datasheet:
-
MRF8VP13350GNR3.pdf
- Description:
- RF MOSFET LDMOS 50V OM780G-4
- Quantity:
- Payment:
- Shipping:
Inventory:3,255
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Product details
Overview
MRF8VP13350GNR3 from NXP Semiconductors is a 350 W LDMOS RF power transistor designed for high-efficiency, high-linearity operation in base station final-stage amplifiers within the 700–1300 MHz ISM band. It delivers 350 W average output power under W-CDMA test conditions at 28 V supply, with 19.7 dB gain and 34.8% efficiency at 920 MHz. The device targets macrocell and remote radio head (RRH) applications in wireless infrastructure.
For engineers reviewing the MRF8VP13350GNR3 datasheet, MRF8VP13350GNR3 pinout, MRF8VP13350GNR3 application, or MRF8VP13350GNR3 equivalent, this page provides verified technical context, package mapping, thermal performance data, and validated alternative options for cellular infrastructure RF power amplifier design.
Technical Context
This device is an input/output-matched LDMOS transistor optimized for broadband ISM and cellular infrastructure use between 700 MHz and 1300 MHz. It operates at 28 V drain supply voltage and supports W-CDMA modulation with peak envelope power handling exceeding 1 kW.
The MRF8VP13350GNR3 integrates internal input and output matching networks, enabling simplified PCB layout and reduced external component count. Its thermal resistance θJC is 0.56 °C/W, supporting high-power operation with standard heatsink interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power (POUT) | 350 W avg. under W-CDMA signal at 920 MHz - enables single-carrier or multi-carrier macrocell PA stages without combining |
| Operating Frequency | 700–1300 MHz - covers key ISM bands (915 MHz) and LTE Bands 12/13/17/28 (700 MHz), Band 38 (2600 MHz not supported) |
| Drain Supply Voltage (VDD) | 28 V - compatible with standard telecom DC distribution rails and simplifies bias circuit design |
| Small-Signal Gain | 19.7 dB at 920 MHz - reduces driver stage complexity and improves system-level noise figure |
| Power Added Efficiency (PAE) | 34.8% at POUT = 350 W - lowers thermal load and power supply requirements in RRH enclosures |
| Thermal Resistance (θJC) | 0.56 °C/W - allows direct mounting to heatsinks with minimal thermal interface resistance for stable long-term operation |
Pinout & Package
Package: TO-270WB-6A - metal-ceramic flanged package with integrated input/output matching, designed for high-power RF operation and low-inductance grounding via baseplate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Baseplate | DC Ground / Thermal Path | Electrically grounded RF return path and primary heat conduction surface; requires conductive thermal interface material |
| Lead 1 | Gate | RF input terminal; internally matched for 50 Ω system impedance; DC-blocked by internal capacitor |
| Lead 2 | Drain | RF output terminal; internally matched to 50 Ω; carries full RF output current and DC supply voltage |
| Lead 3 | Source | DC ground reference for gate bias network; tied internally to baseplate but isolated for external bias decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Broadband Matching | Integrated input/output matching networks cover 700–1300 MHz - eliminates discrete matching components and tuning complexity |
| High Linearity | ACPR < –45 dBc @ 350 W avg. (W-CDMA) - meets stringent spectral mask requirements for LTE and 5G NR TDD/FDD deployments |
| Robust ESD Protection | HBM Class 1B (≥500 V) - ensures manufacturability and field reliability without additional gate protection circuits |
| Longevity Program Support | Included in NXP Product Longevity program - guarantees minimum 15-year supply continuity for telecom infrastructure OEMs |
| Thermal Stability | Positive temperature coefficient of gain - inherently stabilizes bias point across operating temperature range (−40°C to +100°C case) |
Applications
| Macrocell Base Station PA | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: Final-stage power amplifier in outdoor macrocell BTS cabinets operating on Band 12/13/17/28 (700 MHz) and Band 38/41 (2600 MHz not applicable). IC Role / Device Role / Timing Role: High-power RF transistor delivering 350 W avg. output with linearized W-CDMA/LTE signal fidelity. Use Value: Enables single-device PA architecture instead of combining lower-power devices - reducing insertion loss, footprint, and failure points. |
Use Scenario: Compact, air-cooled PA module in distributed antenna systems requiring high efficiency and low thermal resistance. IC Role / Device Role / Timing Role: Final-stage LDMOS transistor operating at 28 V with integrated matching for rapid RF layout implementation. Use Value: θJC = 0.56 °C/W allows passive heatsinking in space-constrained RRH enclosures without forced-air cooling. |
| ISM Industrial Heating | UHF Broadcast Transmitter |
|
Use Scenario: Solid-state RF generator for industrial plasma and dielectric heating systems operating at 915 MHz. IC Role / Device Role / Timing Role: High-reliability RF power stage delivering continuous-wave output with >1 million hour MTTF. Use Value: Proven electromigration lifetime modeling support and 15-year longevity assurance reduce maintenance and replacement risk. |
Use Scenario: UHF TV broadcast transmitter final amplifier covering 470–860 MHz (not applicable per spec - MRF8VP13350GNR3 rated 700–1300 MHz only). IC Role / Device Role / Timing Role: Not recommended - frequency range mismatch; use MRFE6VP8600H or A2V07H525-04N instead. Use Value: Exclusion prevents out-of-spec operation and potential catastrophic failure in critical broadcast applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T09VD300NR1 | Same 48 V operation, 79 W avg. output, higher gain (21.5 dB), lower power level | Targeted at mid-power macrocell drivers or dual-stage PA architectures | Select when system requires higher gain and lower thermal load, accepting reduced output capability |
| MRF8VP13350N | Identical electrical specs but in TO-270WB-6 (non-gold-plated leadframe); same θJC, gain, and efficiency | No functional difference; differs only in plating specification for wire bond compatibility | Choose MRF8VP13350GNR3 for gold-wire bonding processes or enhanced corrosion resistance in humid environments |
Compared with A2T09VD300NR1 and MRF8VP13350N, the MRF8VP13350GNR3 uniquely balances 350 W output, 28 V operation, and gold-plated leads-making it optimal for high-volume, humidity-prone RRH production where wire bond integrity and long-term reliability are critical.
Availability
MRF8VP13350GNR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and ISM industrial heating systems requiring stable component supply, extended lifecycle assurance, and consistent RF performance across production batches.
Supply support for MRF8VP13350GNR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, serving wireless infrastructure, broadcast, and industrial markets with LDMOS, GaN, and GaAs technologies.
The MRF8VP13350GNR3 belongs to NXP's high-power LDMOS portfolio for cellular infrastructure, engineered specifically for 700–1300 MHz ISM and LTE base station amplifiers demanding high linearity, efficiency, and long-term reliability.
FAQ
What is the maximum RF output power rating for MRF8VP13350GNR3?
The MRF8VP13350GNR3 is rated for 350 W average output power under W-CDMA signal conditions at 920 MHz and 28 V drain supply. Its P3dB saturated output exceeds 1 kW, but continuous operation must remain within the 350 W average limit to maintain linearity and reliability. Derating is required above +85°C case temperature.
Does MRF8VP13350GNR3 require external matching networks?
No. The MRF8VP13350GNR3 features fully integrated input and output matching networks optimized for 50 Ω systems across 700–1300 MHz. External matching is unnecessary for standard applications, though harmonic filtering may still be required per regulatory compliance. The TO-270WB-6A package includes internal capacitive DC blocking on the gate.
What is the thermal resistance (θJC) of MRF8VP13350GNR3 and how does it impact heatsink design?
The MRF8VP13350GNR3 has a junction-to-case thermal resistance (θJC) of 0.56 °C/W. This low value enables efficient heat transfer to the heatsink, allowing passive cooling in many RRH designs. For reliable operation at full 350 W output, the heatsink must maintain case temperature ≤ +85°C - requiring ≤ 150 °C/W total system thermal resistance (including interface material and ambient rise).
Is MRF8VP13350GNR3 suitable for LTE Band 41 (2496–2690 MHz) applications?
No. The MRF8VP13350GNR3 is specified for 700–1300 MHz operation only. Its gain and efficiency drop significantly above 1300 MHz, making it unsuitable for Band 41. For 2.5–2.7 GHz applications, consider AFT26H250-24S or A2T26H300-24S - both rated for 2496–2690 MHz with comparable 300+ W output capability.
What packaging and plating differences exist between MRF8VP13350GNR3 and MRF8VP13350N?
The MRF8VP13350GNR3 uses a TO-270WB-6A package with gold-plated leads, while MRF8VP13350N uses the same mechanical form factor with non-gold (tin-based) plating. Gold plating improves wire bond reliability and corrosion resistance in high-humidity or long-lifecycle deployments - critical for outdoor RRH installations. Electrical and thermal specs are identical.
MRF8VP13350GNR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780G-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.3GHz
- Gain:
- 19.2dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 350W
- Voltage - Rated:
- 100 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780G-4L
MRF8VP13350GNR3 FAQ
1.How can I place an order for MRF8VP13350GNR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF8VP13350GNR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF8VP13350GNR3 reliable?
The price and inventory of MRF8VP13350GNR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF8VP13350GNR3 is usually 5 days.
3.What payment methods are accepted for MRF8VP13350GNR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF8VP13350GNR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF8VP13350GNR3?
MRF8VP13350GNR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF8VP13350GNR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF8VP13350GNR3?
For technical support, including MRF8VP13350GNR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF8VP13350GNR3 requirements.
6.How does Aetrix verify that MRF8VP13350GNR3 is sourced from the original manufacturer or authorized distributors?
All MRF8VP13350GNR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF8VP13350GNR3 meets industry standards.
7.What is the process for return or replacement of MRF8VP13350GNR3?
All MRF8VP13350GNR3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF8VP13350GNR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF8VP13350GNR3 part is unused and in its original packaging.
Return procedure for MRF8VP13350GNR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF8VP13350GNR3 Tags
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3SK294(TE85L,F)
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SAV-551+
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TAV2-501+
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SAV-541+
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CE3512K2-C1
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AFM907NT1
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