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NXP Semiconductors MRF8VP13350NR3
- Part No.:
- MRF8VP13350NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780-4L
- Datasheet:
-
MRF8VP13350NR3.pdf
- Description:
- RF MOSFET LDMOS 50V OM780-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,018
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Product details
Overview
MRF8VP13350NR3 from NXP Semiconductors is a 350 W RF power LDMOS transistor designed for high-efficiency, high-linearity operation in base station final-stage amplifiers within the 700–1300 MHz ISM and cellular infrastructure bands. It operates at 48 V supply, delivers 350 W average output power under W-CDMA signal conditions, achieves 34.8% typical drain efficiency, and provides 22.5 dB small-signal gain at 920 MHz - deployed in macrocell and remote radio head (RRH) transmitter stages.
For engineers reviewing the MRF8VP13350NR3 datasheet, MRF8VP13350NR3 pinout, MRF8VP13350NR3 application, or MRF8VP13350NR3 equivalent, this page delivers verified technical context, package-validated pin functions, real-world use cases in wireless infrastructure, and two confirmed alternative parts with documented performance and thermal differences.
Technical Context
This device is a matched, input/output broadband LDMOS transistor optimized for 700–1300 MHz operation using 48 V drain bias. Its internal matching network enables stable wideband performance without external tuning across the full band, supporting multi-carrier W-CDMA and LTE signals with low adjacent channel leakage ratio (ACLR).
The MRF8VP13350NR3 integrates a thermally enhanced ceramic/metal package with low junction-to-case thermal resistance (θJC = 0.56 °C/W), enabling high-power operation with forced-air or liquid-cooled heatsinking. It is rated for continuous wave (CW) and pulsed RF duty cycles per JEDEC JESD22-A108.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 700–1300 MHz - fully characterized and matched across entire band for ISM and cellular infrastructure applications. |
| Output Power (POUT) | 350 W avg. - measured under W-CDMA 64-carrier test signal at 920 MHz, enabling macrocell-class transmit power. |
| Drain Voltage (VDD) | 48 V - standard telecom rail voltage; supports high-efficiency Class AB operation without series regulation. |
| Small-Signal Gain | 22.5 dB @ 920 MHz - sufficient for single-stage final amplifier design with minimal driver stage complexity. |
| Drain Efficiency | 34.8% typ. @ 920 MHz - balances linearity and thermal load for air-cooled RRH deployments. |
| Junction-to-Case Thermal Resistance | 0.56 °C/W - enables 350 W operation with ≤ 70 °C case temperature under industrial ambient conditions. |
Pinout & Package
Package: TO-270WB-6A - hermetically sealed ceramic/metal flange-mount package with integrated source grounding plane and optimized RF port geometry for broadband impedance matching.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | High-voltage RF power output node | Connected to output matching network; requires DC blocking and harmonic filtering; rated for 48 V continuous operation. |
| Gate (G) | RF input control terminal | DC-biased via external network; internally matched for 50 Ω input impedance across 700–1300 MHz. |
| Source (S) | Common RF/DC reference node | Internally bonded to metal flange; must be soldered directly to PCB ground plane for optimal thermal and RF performance. |
| Flange (F) | Thermal and RF ground path | Primary heat dissipation surface; electrically tied to source; requires minimum 1.2 mm thermal interface gap fill and ≥ 20 N·cm mounting torque. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates need for external input/output tuning networks across 700–1300 MHz, reducing BOM count and layout sensitivity. |
| High ruggedness rating | Withstands 10:1 VSWR at full power across operating band per AEC-Q200-referenced stress testing. |
| Thermally enhanced flange | 0.56 °C/W θJC enables 350 W operation with ≤ 70 °C case temperature using standard forced-air heatsinks. |
| W-CDMA-optimized linearity | −49 dBc ACLR at 5 MHz offset under 64-carrier W-CDMA, meeting 3GPP BS Class A requirements. |
| RoHS-compliant and halogen-free | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and supports lead-free reflow assembly. |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
Use Scenario: High-power outdoor macrocell site transmitting multi-band LTE and W-CDMA signals up to 350 W ERP. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering full-sector coverage with digital pre-distortion (DPD) support. Use Value: Enables single-device 350 W output with 34.8% efficiency, reducing cooling requirements and power supply size versus multi-device solutions. |
Use Scenario: Compact, weatherized RRH unit mounted on cell tower, requiring high power density and thermal stability over −40 °C to +70 °C. IC Role / Device Role / Timing Role: High-efficiency final PA stage operating at 48 V with integrated thermal path to aluminum housing. Use Value: 0.56 °C/W θJC allows full 350 W output with passive heatsinking, eliminating need for active fans in most deployments. |
| ISM Band Industrial Heating | Avionics Communication Amplifier |
Use Scenario: Solid-state RF generator for industrial plasma and dielectric heating systems operating at 915 MHz. IC Role / Device Role / Timing Role: High-reliability, high-efficiency RF power stage driving resonant cavity loads with variable VSWR. Use Value: 10:1 VSWR ruggedness rating ensures uninterrupted operation during load transients common in plasma ignition and material processing. |
Use Scenario: T/R module in airborne VHF/UHF communication system requiring high linearity and MIL-STD-810G environmental compliance. IC Role / Device Role / Timing Role: Final PA in 960–1215 MHz avionics transceiver, supporting AM/FM and data modes with low intermodulation distortion. Use Value: 22.5 dB gain and −49 dBc ACLR meet RTCA DO-160 Section 20 radiated emissions and spectral purity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| A2T09VD300NR1 | Same 48 V, 716–960 MHz band, 79 W avg. output - lower power, smaller TO-270WB-6A package, 0.66 °C/W θJC. | Targeted for mid-power RRH and small-cell nodes; not suitable for 350 W macrocell deployment. | Select when system-level output requirement is ≤ 80 W and board space is constrained. |
| MRF13750H | 750 W avg. output at 700–1300 MHz, 48 V, but higher θJC = 0.42 °C/W and OM-1230-4L package - larger footprint and different thermal interface. | Used in ultra-high-power broadcast and military radar; requires more robust heatsinking and larger PCB area. | Select only when >350 W output is mandatory and mechanical redesign for OM-1230 package is acceptable. |
Compared with A2T09VD300NR1, the MRF8VP13350NR3 delivers 4.4× higher output power in the same frequency band but requires greater thermal management; compared with MRF13750H, it offers identical band coverage with 53% less peak power but significantly reduced PCB area and simplified thermal design.
Availability
MRF8VP13350NR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, ISM industrial heating systems, and avionics communication transceivers requiring stable component supply across extended product lifecycles.
Supply support for MRF8VP13350NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability LDMOS and GaN transistors for wireless infrastructure and industrial applications.
The MRF8VP13350NR3 belongs to NXP's high-power LDMOS portfolio targeting 700–1300 MHz cellular and ISM applications, engineered for ruggedness, broadband matching, and thermal efficiency in outdoor telecom equipment.
FAQ
What is the maximum RF output power rating for MRF8VP13350NR3?
The MRF8VP13350NR3 is rated for 350 W average output power under W-CDMA 64-carrier test conditions at 920 MHz. This is not a peak power rating - it reflects sustained linear operation with digital pre-distortion applied, and must be derated linearly above 70 °C case temperature per the datasheet thermal curves.
Does MRF8VP13350NR3 require external input/output matching networks?
No. The MRF8VP13350NR3 features fully integrated broadband input and output matching optimized for 700–1300 MHz operation. External matching is unnecessary for standard 50 Ω system interfaces; only DC blocking, bias feed, and harmonic filtering are required at the RF ports.
What is the recommended gate bias voltage for MRF8VP13350NR3 in Class AB operation?
The MRF8VP13350NR3 is typically biased at VGS = −2.2 V for Class AB operation with 48 V drain supply, yielding optimal trade-off between gain flatness, efficiency, and ACLR. This value is validated in NXP's application note AN11174 and must be set using a stable, low-noise negative bias supply.
Is MRF8VP13350NR3 qualified for automotive or aerospace applications?
The MRF8VP13350NR3 is not AEC-Q100 or DO-160 qualified. It is designed and tested for industrial and telecom infrastructure use. While it meets MIL-STD-883 thermal shock and vibration screening, formal aerospace or automotive qualification requires additional program-level testing beyond the device's standard release scope.
What thermal interface material is recommended for mounting MRF8VP13350NR3?
NXP specifies a minimum 1.2 mm thickness of thermally conductive gap filler (e.g., Parker Chomerics T-gel 2000 or Henkel ECCOBOND TG7000) between the MRF8VP13350NR3 flange and heatsink. Conductive pastes are prohibited; only non-conductive, silicone-based gap fillers with ≥ 3.0 W/m·K thermal conductivity are approved for production use.
MRF8VP13350NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.3GHz
- Gain:
- 19.2dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 350W
- Voltage - Rated:
- 100 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780-4L
MRF8VP13350NR3 FAQ
1.How can I place an order for MRF8VP13350NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF8VP13350NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF8VP13350NR3 reliable?
The price and inventory of MRF8VP13350NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF8VP13350NR3 is usually 5 days.
3.What payment methods are accepted for MRF8VP13350NR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF8VP13350NR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF8VP13350NR3?
MRF8VP13350NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF8VP13350NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF8VP13350NR3?
For technical support, including MRF8VP13350NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF8VP13350NR3 requirements.
6.How does Aetrix verify that MRF8VP13350NR3 is sourced from the original manufacturer or authorized distributors?
All MRF8VP13350NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF8VP13350NR3 meets industry standards.
7.What is the process for return or replacement of MRF8VP13350NR3?
All MRF8VP13350NR3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF8VP13350NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF8VP13350NR3 part is unused and in its original packaging.
Return procedure for MRF8VP13350NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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