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NXP Semiconductors MRF8VP13350NR5
- Part No.:
- MRF8VP13350NR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780G-4L
- Datasheet:
-
MRF8VP13350NR5.pdf
- Description:
- RF MOSFET LDMOS 50V OM780G-4
- Quantity:
- Payment:
- Shipping:
Inventory:7,797
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Product details
Overview
MRF8VP13350NR5 from NXP Semiconductors is a 350 W CW/peak N-channel enhancement-mode LDMOS RF power transistor designed for industrial, scientific, and medical (ISM) applications in the 700–1300 MHz band. It delivers 355 W output at 915 MHz CW (48 Vdc, 20.7 dB gain, 67.5% drain efficiency) and 350 W peak at 1300 MHz pulse (50 Vdc, 19.2 dB gain, 58.0% efficiency), with rugged >20:1 load VSWR tolerance.
For engineers reviewing the MRF8VP13350NR5 datasheet, MRF8VP13350NR5 pinout, MRF8VP13350NR5 application, or MRF8VP13350NR5 equivalent, this device is selected for high-power ISM amplifiers requiring stable thermal performance, integrated ESD protection, and single-ended or push-pull operation up to 50 VDD.
Technical Context
This dual-gate LDMOS transistor features internally input-matched architecture optimized for narrowband ISM systems. Its balanced dual-drain/dual-gate structure supports both single-ended and push-pull configurations without external input matching networks.
Thermal design is enabled by low junction-to-case thermal resistance (0.24 °C/W CW, 0.04 °C/W pulse) and operation up to +225°C junction temperature. Ruggedness is validated at >20:1 VSWR under 3 dB overdrive at 1300 MHz pulse and >10:1 at 915 MHz CW, with no degradation observed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 700–1300 MHz - Supports ISM bands including 915 MHz industrial heating and 1300 MHz particle accelerator systems. |
| Output Power | 355 W CW @ 915 MHz / 350 W peak @ 1300 MHz - Enables high-efficiency RF energy delivery in production-grade amplifiers. |
| Drain Efficiency | 67.5% @ 915 MHz CW / 58.0% @ 1300 MHz pulse - Reduces thermal load and DC power supply requirements in high-duty-cycle systems. |
| Power Gain | 20.7 dB @ 915 MHz CW / 19.2 dB @ 1300 MHz pulse - Simplifies driver stage design and improves system signal-to-noise ratio. |
| Junction Temp Limit | +225°C - Allows sustained operation in thermally constrained enclosures with active or passive heatsinking. |
| VSWR Tolerance | >20:1 @ 1300 MHz pulse, >10:1 @ 915 MHz CW - Eliminates need for external circulators or isolators in mismatch-prone industrial loads. |
| ESD Protection | HBM Class 1C (1500 V), MM Class A (100 V), CDM Class IV (2000 V) - Ensures robust handling during PCB assembly and field service. |
Pinout & Package
Package: OM-780-4L plastic overmolded package with exposed source pad on backside. Dimensions: 20.32 mm × 10.39 mm × 4.70 mm (L×W×H). Thermal vias recommended under source pad per Figure 18.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate A | Control electrode for first transistor half | Accepts bias and RF drive; internally matched for 50 Ω input impedance in reference circuits. |
| 2 - Gate B | Control electrode for second transistor half | Enables push-pull operation; matched identically to Gate A for balanced drive. |
| 3 - Drain A | High-power RF output terminal (half) | Connected to output matching network; requires low-inductance layout and thermal interface to heatsink. |
| 4 - Drain B | High-power RF output terminal (half) | Paired with Drain A for parallel or push-pull output configuration; shares source reference. |
| Exposed Backside | Source terminal (common for both halves) | Primary thermal path; must be soldered to copper pour with thermal vias for RθJC = 0.24 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Internally input matched | Eliminates discrete input matching components in 915/1300 MHz reference designs, reducing BOM count and layout sensitivity. |
| Dual-gate/dual-drain architecture | Supports flexible amplifier topologies: single-ended (Gate A/B tied), push-pull (differential drive), or paralleled outputs. |
| 50 V maximum drain voltage rating | Enables higher output power and efficiency vs. 28 V LDMOS, while maintaining compatibility with standard industrial HV supplies. |
| Ruggedized load mismatch tolerance | Validated >20:1 VSWR survival at full power eliminates need for external protection circuitry in plasma or heating loads. |
| Integrated ESD protection | Meets JESD22-A114 (1500 V HBM), enabling safe handling without special ESD protocols during manufacturing. |
Applications
| 915 MHz Industrial Heating | 1300 MHz Particle Accelerators |
|---|---|
Use Scenario: RF energy delivery into plasma chambers or dielectric heating cavities for metal welding, plastic sealing, or food processing. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating in CW mode at 915 MHz with 48 Vdc supply and 100 mA quiescent current. Use Value: Delivers 355 W output with 67.5% drain efficiency, minimizing cooling requirements and power supply sizing in continuous-duty industrial equipment. |
Use Scenario: Pulsed RF amplification for klystron or solid-state driver stages in linear particle accelerators and synchrotrons. IC Role / Device Role / Timing Role: High-peak-power pulse amplifier operating at 1300 MHz with 100 µsec pulse width and 20% duty cycle. Use Value: Sustains 350 W peak output with 58.0% efficiency and >20:1 VSWR tolerance, ensuring reliability under transient beam-loading mismatches. |
| 900 MHz TETRA Base Stations | ISM Band RF Plasma Generators |
Use Scenario: High-linearity final amplifier in land-mobile radio infrastructure supporting TETRA digital trunking at 900 MHz. IC Role / Device Role / Timing Role: Linear RF power stage biased for Class AB operation, delivering 359 W at 902 MHz with 20.1 dB gain. Use Value: Achieves 64.7% drain efficiency and 20.1 dB power gain in reference circuit, meeting spectral mask and adjacent channel power requirements. |
Use Scenario: RF generator core for semiconductor process plasma etching or deposition tools operating across 700–1300 MHz ISM bands. IC Role / Device Role / Timing Role: Robust broadband amplifier capable of CW or pulsed operation with integrated ESD protection against chamber arcing events. Use Value: Survives repeated >10:1 VSWR exposure without degradation, reducing unplanned downtime in vacuum chamber environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF8VP13350GN | Gull-wing leaded variant (OM-780G-4L); identical electrical specs but different package geometry and thermal via layout. | Suitable for wave-solder or selective solder processes; requires modified PCB pad stack per Figure 19. | Select MRF8VP13350GN when automated through-hole assembly or legacy gull-wing footprint compatibility is required. |
| MRFE6VP6350HR5 | Same 350 W rating but rated for 600–1000 MHz; lower gain (18.5 dB typ @ 915 MHz) and efficiency (62% typ @ 915 MHz). | Better suited for sub-1 GHz broadcast or UHF radar; not validated for 1300 MHz operation. | Choose MRFE6VP6350HR5 only for 600–1000 MHz applications where wider bandwidth and proven broadcast reliability are prioritized. |
Compared with MRF8VP13350NR5, the MRF8VP13350GN offers identical RF performance in a gull-wing package for alternative assembly methods, while the MRFE6VP6350HR5 trades 1300 MHz capability for enhanced sub-GHz linearity and broadcast qualification - neither is pin-compatible, and PCB redesign is required for either alternative.
Availability
MRF8VP13350NR5 is available at Aetrix Electronics and suitable for industrial heating systems, particle accelerator drivers, and TETRA base station amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability deployments.
Supply support for MRF8VP13350NR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, with deep expertise in LDMOS technology for industrial, automotive, and communications markets.
The MRF8VP13350NR5 belongs to NXP's MRF8VP family of high-voltage LDMOS transistors engineered specifically for rugged, high-efficiency ISM-band amplifiers operating from 700–1300 MHz.
FAQ
What is the maximum continuous drain voltage rating for the MRF8VP13350NR5?
The MRF8VP13350NR5 has a maximum drain-source voltage (VDSS) rating of +100 Vdc, with operational qualification confirmed up to 50 Vdc in all published reference and test circuits. This 50 Vdc operating limit ensures reliable performance and longevity in high-power amplifier designs while maintaining optimal gain and efficiency.
Does the MRF8VP13350NR5 require external input matching networks?
No, the MRF8VP13350NR5 is internally input matched for 50 Ω systems across its 700–1300 MHz operating range. NXP's reference circuits (e.g., 915 MHz and 1300 MHz fixtures) confirm full functionality without discrete input matching components, simplifying PCB layout and improving repeatability in production.
What thermal management is required for reliable operation of the MRF8VP13350NR5?
The MRF8VP13350NR5 requires low-thermal-resistance mounting to a heatsink via its exposed source pad. Per datasheet Figure 18, use a 20.32 mm × 10.39 mm copper area with ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch) to achieve the specified 0.24 °C/W junction-to-case resistance in CW operation.
Can the MRF8VP13350NR5 be used in push-pull configuration?
Yes, the MRF8VP13350NR5 is explicitly designed for push-pull operation using separate Gate A/Gate B and Drain A/Drain B terminals. Its symmetrical dual-half structure enables balanced drive and cancellation of even-order harmonics, making it suitable for high-linearity amplifier stages in TETRA and broadband ISM systems.
What is the load VSWR tolerance of the MRF8VP13350NR5 under full-power conditions?
The MRF8VP13350NR5 is validated for >20:1 load VSWR survival at 1300 MHz pulse (100 µsec, 20% duty cycle, 3 dB overdrive) and >10:1 at 915 MHz CW, with no device degradation observed. This ruggedness eliminates the need for external circulators in industrial heating and plasma generation applications.
MRF8VP13350NR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780G-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 700MHz ~ 1.3GHz
- Gain:
- 19.2dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 350W
- Voltage - Rated:
- 100 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780G-4L
MRF8VP13350NR5 FAQ
1.How can I place an order for MRF8VP13350NR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF8VP13350NR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF8VP13350NR5 reliable?
The price and inventory of MRF8VP13350NR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF8VP13350NR5 is usually 5 days.
3.What payment methods are accepted for MRF8VP13350NR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF8VP13350NR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF8VP13350NR5?
MRF8VP13350NR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF8VP13350NR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF8VP13350NR5?
For technical support, including MRF8VP13350NR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF8VP13350NR5 requirements.
6.How does Aetrix verify that MRF8VP13350NR5 is sourced from the original manufacturer or authorized distributors?
All MRF8VP13350NR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF8VP13350NR5 meets industry standards.
7.What is the process for return or replacement of MRF8VP13350NR5?
All MRF8VP13350NR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF8VP13350NR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF8VP13350NR5 part is unused and in its original packaging.
Return procedure for MRF8VP13350NR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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