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NXP Semiconductors MRF9045LR1
- Part No.:
- MRF9045LR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-360
- Datasheet:
-
MRF9045LR1.pdf
- Description:
- RF MOSFET LDMOS 28V NI360
- Quantity:
- Payment:
- Shipping:
Inventory:2,340
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Product details
Overview
MRF9045LR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband common-source amplifier applications in 28 V base station equipment operating up to 1000 MHz. It delivers 45 W PEP output power at 945 MHz, with 18.8 dB power gain, 42% drain efficiency, and –32 dBc third-order IMD under two-tone conditions.
For engineers reviewing the MRF9045LR1 datasheet, MRF9045LR1 pinout, MRF9045LR1 application, or MRF9045LR1 equivalent, this device is selected for high-reliability RF power amplification where VSWR tolerance (10:1), thermal stability (TJ = 200°C), and characterized large-signal impedance matching are critical design requirements.
Technical Context
This LDMOS transistor operates in Class AB with gate threshold voltage of 2–4 Vdc and quiescent gate voltage of 3.7 Vdc at IDQ = 350 mA. Its dynamic characteristics include Ciss = 69 pF, Coss = 37 pF, and Crss = 1.5 pF at 28 Vdc, enabling stable broadband matching across 930–960 MHz.
The device is characterized using series-equivalent large-signal impedance parameters (Zsource = 1.15 + j0.25 Ω, Zload = 2.6 + j0.16 Ω at 945 MHz), supporting repeatable input/output network design. Thermal resistance RθJC = 1.4 °C/W ensures effective heat transfer from junction to case in high-power operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 45 W PEP at 945 MHz - supports high-linearity cellular base station transmit stages |
| Power Gain | 18.8 dB typical - enables single-stage amplification without cascaded gain blocks |
| Drain Efficiency | 42% typical (two-tone), 60% typical (CW) - reduces thermal load and DC power consumption |
| VSWR Tolerance | 10:1 @ 28 Vdc, 945 MHz, 45 W CW - sustains operation under mismatched antenna conditions |
| Junction Temp | 200°C maximum - allows robust operation in thermally constrained base station enclosures |
| RθJC | 1.4 °C/W - mandates heatsink interface with ≤0.5°C/W total thermal resistance for safe 45 W operation |
| ESD Rating | HBM Class 1, MM Class M1 - provides basic handling protection without external ESD circuitry |
Pinout & Package
Package: CASE 360B-05, STYLE 1 (NI-360), ceramic/metal hermetic package with flange-mount thermal path. Dimensions: 20.19–20.45 mm × 5.72–5.97 mm × 1.96–2.21 mm (L×W×H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-current RF power output node | Connected to output matching network and heatsink; carries full RF output current and DC bias |
| 2. Gate | RF input control terminal | Bias-controlled signal entry point; requires stable DC feed and RF decoupling per test circuit layout |
| 3. Source | Common reference and RF return path | Directly bonded to flange ground; serves as low-inductance RF return and thermal conduction path |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD Protection | HBM Class 1 and MM Class M1 compliance - eliminates need for external gate protection diodes in standard handling environments |
| Maximum Gain & Phase Flatness | 18.5–18.8 dB gain across 930–960 MHz with <±0.3 dB variation - simplifies broadband linearization and reduces predistortion complexity |
| Thermal Stability | TJ = 200°C max and RθJC = 1.4 °C/W - enables sustained 45 W PEP operation with predictable derating above 25°C case temperature |
| Large-Signal Impedance Characterization | Zsource and Zload provided at 930/945/960 MHz - permits direct synthesis of reproducible microstrip matching networks without iterative EM tuning |
| RoHS Compliant & Tape/Reel | Lead-free finish; supplied in 32 mm tape, 13″ reel (500 units) - supports automated SMT assembly in production environments |
Applications
| Cellular Base Station PA | ISM Band Amplifier |
|---|---|
|
Use Scenario: Final-stage power amplifier in 900 MHz GSM/EDGE macro base stations requiring 45 W PEP output into 50 Ω load with 10:1 VSWR survivability. IC Role / Device Role / Timing Role: High-efficiency RF power transistor operating in Class AB common-source configuration with fixed 28 V drain supply and 350 mA quiescent current. Use Value: Delivers 42% two-tone efficiency and –32 dBc IMD at 45 W, reducing cooling requirements and adjacent channel interference in multi-carrier deployments. |
Use Scenario: 915 MHz ISM-band industrial heating or plasma generation system requiring ruggedized 45 W CW RF power delivery. IC Role / Device Role / Timing Role: Primary RF power switch in solid-state RF generator, biased for continuous-wave operation with thermal monitoring. Use Value: Withstands 10:1 VSWR at full 45 W CW and operates up to 200°C junction temperature, eliminating need for active VSWR foldback circuits. |
| Broadband Wireless Infrastructure | Public Safety Radio Transmitter |
|
Use Scenario: Multi-band repeater amplifier covering 930–960 MHz band with flat gain response and minimal intermodulation distortion. IC Role / Device Role / Timing Role: Broadband common-source amplifier using pre-characterized Zsource/Zload data for rapid impedance matching network design. Use Value: Achieves ±0.3 dB gain flatness and –33 dBc IMD across 930–960 MHz, enabling consistent coverage without per-frequency retuning. |
Use Scenario: Land-mobile radio transmitter final amplifier for 800/900 MHz public safety bands requiring high reliability and field-deployable ruggedness. IC Role / Device Role / Timing Role: High-reliability RF power stage with integrated ESD protection and hermetic NI-360 packaging for harsh environmental operation. Use Value: RoHS-compliant ceramic/metal package and HBM Class 1 ESD rating ensure long-term reliability in mobile vehicle-mounted transmitters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP6450HR5 | Higher P1dB (65 W), higher RθJC (1.6 °C/W), same 28 V operation but GaN-on-SiC process | Supports wider bandwidth (1.8–2.2 GHz) and higher peak power; requires different gate biasing due to GaN threshold behavior | Select when upgrading to GaN for improved efficiency above 1 GHz or extended bandwidth beyond 1000 MHz |
| STMicroelectronics PD85003 | LDMOS, 45 W PEP at 945 MHz, RθJC = 1.5 °C/W, no integrated ESD protection, TO-247 package | Requires external gate ESD clamping; larger footprint and lower thermal conductivity than NI-360 ceramic package | Select when cost-sensitive designs accept added protection components and less compact thermal solution |
Compared with MRF9045LR1, the MRFE6VP6450HR5 offers higher frequency capability and power density but demands revised gate drive and thermal management, while the PD85003 provides functionally similar RF performance in a legacy through-hole package without built-in ESD hardening.
Availability
MRF9045LR1 is available at Aetrix Electronics and suitable for cellular base station infrastructure, public safety radio transmitters, and broadband wireless repeaters requiring stable component supply and long-lifecycle support.
Supply support for MRF9045LR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors and analog/mixed-signal ICs, specializing in high-performance semiconductor solutions for wireless infrastructure and automotive systems.
The MRF9045LR1 belongs to Freescale's MRF9000 family of lateral DMOS RF power transistors, engineered specifically for high-efficiency, broadband base station amplifiers operating at 28 V with stringent linearity and ruggedness requirements.
FAQ
What is the maximum operating frequency range for the MRF9045LR1?
The MRF9045LR1 is characterized and optimized for operation from 930 MHz to 960 MHz, with typical performance specified at 945 MHz. It is rated for broadband use up to 1000 MHz in commercial and industrial applications, as confirmed by its design specification and test data across the 930–960 MHz band in the official datasheet.
Does the MRF9045LR1 require external ESD protection?
No, the MRF9045LR1 integrates on-die ESD protection rated to Human Body Model Class 1 and Machine Model Class M1. This built-in protection eliminates the need for external gate protection diodes in standard PCB handling and assembly environments, though system-level transient suppression may still be advised for deployed equipment.
What is the thermal resistance junction-to-case for the MRF9045LR1?
The thermal resistance junction-to-case (RθJC) for the MRF9045LR1 is 1.4 °C/W, measured under standard test conditions. This value is critical for heatsink sizing and must be used with the device's 125 W maximum power dissipation rating to ensure junction temperature remains below 200°C during operation.
Can the MRF9045LR1 operate reliably under high VSWR conditions?
Yes, the MRF9045LR1 is specifically characterized to handle 10:1 VSWR at 28 Vdc, 945 MHz, and 45 W CW output power. This ruggedness is enabled by its lateral MOSFET structure and thermal design, making it suitable for base station applications where antenna mismatch events are possible.
What package type does the MRF9045LR1 use, and how many pins does it have?
The MRF9045LR1 uses the CASE 360B-05, STYLE 1 (NI-360) ceramic/metal hermetic package with three terminals: Pin 1 (Drain), Pin 2 (Gate), and Pin 3 (Source). The package features a flanged metal base for direct heatsink mounting and is supplied in 32 mm tape-and-reel format (500 units per reel).
MRF9045LR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-360
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 18.8dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 350 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-360
MRF9045LR1 FAQ
1.How can I place an order for MRF9045LR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF9045LR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF9045LR1 reliable?
The price and inventory of MRF9045LR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF9045LR1 is usually 5 days.
3.What payment methods are accepted for MRF9045LR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF9045LR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF9045LR1?
MRF9045LR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF9045LR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF9045LR1?
For technical support, including MRF9045LR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF9045LR1 requirements.
6.How does Aetrix verify that MRF9045LR1 is sourced from the original manufacturer or authorized distributors?
All MRF9045LR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF9045LR1 meets industry standards.
7.What is the process for return or replacement of MRF9045LR1?
All MRF9045LR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF9045LR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF9045LR1 part is unused and in its original packaging.
Return procedure for MRF9045LR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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