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NXP Semiconductors MRF9045LSR1
- Part No.:
- MRF9045LSR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-360S
- Datasheet:
-
MRF9045LSR1.pdf
- Description:
- RF MOSFET LDMOS 28V NI360
- Quantity:
- Payment:
- Shipping:
Inventory:2,984
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Product details
Overview
MRF9045LSR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband common-source amplifier applications in 28 V base station equipment. It delivers 45 W PEP output at 945 MHz, achieves 18.8 dB power gain and 42% drain efficiency, and is rated for 175 W total dissipation with 1.0 °C/W junction-to-case thermal resistance.
For engineers reviewing the MRF9045LSR1 datasheet, MRF9045LSR1 pinout, MRF9045LSR1 application, or MRF9045LSR1 equivalent, key selection criteria include its 930–960 MHz broadband performance, 10:1 VSWR ruggedness, integrated ESD protection, and NI-360S package compatibility with high-power RF PCB layouts.
Technical Context
This device operates as a Class AB large-signal RF amplifier with gate threshold voltage of 2–4 Vdc and quiescent gate voltage of 3.7 Vdc at 350 mA IDQ. Its dynamic characteristics include 69 pF input capacitance (Ciss), 37 pF output capacitance (Coss), and 1.5 pF reverse transfer capacitance (Crss) at 28 Vdc and 1 MHz.
The MRF9045LSR1 is characterized using series-equivalent large-signal impedance parameters: source impedance of 1.15 + j0.25 Ω and load impedance of 2.6 + j0.16 Ω at 945 MHz, enabling precise matching network design for 50 Ω systems in base station transmitters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 45 W PEP at 945 MHz - supports high-linearity LTE/UMTS macro base station PA stages |
| Power Gain | 18.8 dB typical - enables single-stage amplification without cascaded gain blocks |
| Drain Efficiency | 42% typical at PEP - reduces thermal load and DC power consumption in 28 V systems |
| Thermal Resistance | 1.0 °C/W (junction-to-case) - allows direct mounting to heatsink for stable 150 °C case operation |
| VSWR Tolerance | 10:1 at 28 Vdc, 945 MHz, 45 W CW - ensures survivability under antenna mismatch conditions |
| ESD Rating | HBM Class 1, MM Class M1 - provides robust handling during assembly and field operation |
| Package | NI-360S (Case 360C-05, Style 1) - metal-ceramic flanged package with gold-plated leads (40 μ″ nominal) |
Pinout & Package
Package: NI-360S (Case 360C-05, Style 1), flanged metal-ceramic housing with solderable baseplate and three external terminals. Designed for high-power RF thermal management and mechanical stability on copper-clad PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-current RF output node | Connected directly to heatsink via flange; carries full RF output current and DC bias |
| 2. Gate | RF input control terminal | Low-impedance gate drive point requiring impedance-matched input network for stability |
| 3. Source | RF return and DC ground reference | Internally bonded to flange; serves as RF ground plane reference for input/output matching networks |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD Protection | HBM Class 1 and MM Class M1 compliance - eliminates need for external ESD clamps in front-end layout |
| Maximum Gain & Phase Flatness | ±0.5 dB gain variation and <2° insertion phase deviation across 930–960 MHz - simplifies linearization and DPD implementation |
| Thermal Stability | 150 °C maximum case temperature rating with 200 °C junction limit - supports continuous operation in outdoor base station enclosures |
| Large-Signal Impedance Data | Published Zsource and Zload values per frequency (e.g., 1.15 + j0.25 Ω / 2.6 + j0.16 Ω @ 945 MHz) - enables accurate broadband matching without de-embedding |
| Ruggedness | Rated for 10:1 VSWR at full 45 W CW output - protects against reflected power damage during antenna detuning or failure |
Applications
| Macro Base Station Transmitter | Public Safety Radio Amplifier |
|---|---|
Use Scenario: High-power final stage in 800–960 MHz LTE/UMTS macro cell sites with digital predistortion feedback. IC Role / Device Role / Timing Role: RF power transistor operating in Class AB mode, driven by broadband driver stage and matched to 50 Ω antenna interface. Use Value: Delivers 45 W PEP with –32 dBc IMD at 945 MHz, meeting 3GPP ACLR requirements while maintaining 42% efficiency under real-world signal crest factors. | Use Scenario: Final amplifier in land-mobile radio (LMR) repeaters used by fire, police, and EMS in 851–866 MHz band. IC Role / Device Role / Timing Role: High-reliability RF power switch/amplifier biased at 350 mA IDQ, operating with analog FM or P25 digital modulation. Use Value: Survives 10:1 VSWR events during mobile antenna coupling shifts, eliminating need for circulators or T/R switches in compact repeater chassis. |
| Broadband Wireless Access PA | ISM Band Industrial Amplifier |
Use Scenario: Output stage in fixed wireless access (FWA) customer premises equipment (CPE) operating in 902–928 MHz ISM band. IC Role / Device Role / Timing Role: Single-ended common-source amplifier delivering 45 W peak power for OFDM-based point-to-multipoint links. Use Value: Achieves 18.5–18.8 dB gain flatness across 930–960 MHz, reducing calibration complexity and enabling wide instantaneous bandwidth for multi-carrier signals. | Use Scenario: RF heating or plasma generation amplifier in industrial equipment operating at 915 MHz. IC Role / Device Role / Timing Role: Continuous-wave (CW) power transistor biased for high-efficiency Class AB operation with forced-air or liquid cooling. Use Value: 60% drain efficiency at 45 W CW output minimizes heat sink size and power supply loading in enclosed industrial cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF9045LR1 | Same die, NI-360 package (Case 360B-05); higher RθJC = 1.4 °C/W vs. 1.0 °C/W | Suitable for lower ambient or forced-cooled environments where thermal margin permits higher junction rise | Select MRF9045LR1 only when board-level heatsinking is enhanced and case temperature remains ≤130 °C |
| MRFE6VP6300H | Higher P1dB (300 W), 6 GHz max frequency, different biasing (VGS(th) = 1.5–2.5 V), NI-780 package | Targets multi-band macro base stations requiring wider frequency coverage and higher power scaling | Choose MRFE6VP6300H only when system requires >100 W output or operation beyond 1 GHz |
Compared with MRF9045LR1, the MRF9045LSR1 offers superior thermal performance (1.0 vs. 1.4 °C/W) for same-die RF power delivery; compared with MRFE6VP6300H, it provides optimized cost and layout simplicity for dedicated 900 MHz infrastructure, avoiding over-specification in frequency range and power headroom.
Availability
MRF9045LSR1 is available at Aetrix Electronics and suitable for macro base station transmitters, public safety radio repeaters, broadband wireless access CPE, and industrial RF heating systems requiring stable component supply through extended product lifecycle phases.
Supply support for MRF9045LSR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor was a global semiconductor company specializing in RF power, microcontrollers, and automotive ICs before its acquisition by NXP Semiconductors in 2015. Its RF Power portfolio served wireless infrastructure and industrial markets.
The MRF9045LSR1 belongs to Freescale's LDMOS RF power transistor family, engineered specifically for high-efficiency, high-linearity, broadband amplification in 28 V base station transmitters operating up to 1 GHz.
FAQ
What is the maximum continuous drain current rating for the MRF9045LSR1?
The MRF9045LSR1 does not specify a maximum continuous drain current (ID) rating in its datasheet. Instead, it defines safe operating area via maximum ratings: drain-source voltage (–0.5 to +65 Vdc), gate-source voltage (–0.5 to +15 Vdc), and total device dissipation (175 W at TC = 25°C, derated at 1 W/°C above). Actual current depends on bias point, thermal management, and RF load conditions. For the MRF9045LSR1, typical quiescent drain current is 350 mA at 28 Vdc.
Does the MRF9045LSR1 require external gate protection diodes?
No, the MRF9045LSR1 incorporates integrated ESD protection rated to HBM Class 1 and MM Class M1, eliminating the need for external gate protection diodes in standard handling and circuit operation. This built-in protection covers transient events during PCB assembly and normal RF operation, provided gate drive networks remain within specified voltage limits (VGS = –0.5 to +15 Vdc).
What is the difference between MRF9045LSR1 and MRF9045LR1?
The MRF9045LSR1 and MRF9045LR1 share identical RF die and electrical specifications but differ in package and thermal performance. The MRF9045LSR1 uses the NI-360S (Case 360C-05) package with 1.0 °C/W junction-to-case thermal resistance, while the MRF9045LR1 uses NI-360 (Case 360B-05) with 1.4 °C/W. Both are rated for 28 V operation and 45 W PEP output at 945 MHz, but the MRF9045LSR1 supports higher power density in thermally constrained designs.
Can the MRF9045LSR1 be used in Class C amplifier configurations?
The MRF9045LSR1 is characterized and optimized for Class AB operation (IDQ = 350 mA), and its datasheet provides no validated performance data for Class C biasing. While the device's lateral MOSFET structure permits hard switching, Freescale's published gain, efficiency, and linearity metrics - including –32 dBc IMD and 42% efficiency - apply strictly to Class AB conditions. Using the MRF9045LSR1 in Class C requires full re-characterization and risks violating safe operating area limits.
Is the MRF9045LSR1 RoHS compliant?
Yes, the MRF9045LSR1 is RoHS compliant, as explicitly stated in the official Freescale documentation. It meets EU Directive 2011/65/EU requirements for restriction of hazardous substances, including lead-free terminations and compliant plating (40 μ″ nominal gold on leads). The "S" suffix in MRF9045LSR1 denotes both RoHS compliance and the NI-360S package variant.
MRF9045LSR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-360S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 18.8dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 350 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-360S
MRF9045LSR1 FAQ
1.How can I place an order for MRF9045LSR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF9045LSR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF9045LSR1 reliable?
The price and inventory of MRF9045LSR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF9045LSR1 is usually 5 days.
3.What payment methods are accepted for MRF9045LSR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF9045LSR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF9045LSR1?
MRF9045LSR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF9045LSR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF9045LSR1?
For technical support, including MRF9045LSR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF9045LSR1 requirements.
6.How does Aetrix verify that MRF9045LSR1 is sourced from the original manufacturer or authorized distributors?
All MRF9045LSR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF9045LSR1 meets industry standards.
7.What is the process for return or replacement of MRF9045LSR1?
All MRF9045LSR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF9045LSR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF9045LSR1 part is unused and in its original packaging.
Return procedure for MRF9045LSR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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