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NXP Semiconductors MRF9060NR1
- Part No.:
- MRF9060NR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-270AA
- Datasheet:
-
MRF9060NR1.pdf
- Description:
- RF MOSFET LDMOS 26V TO270-2
- Quantity:
- Payment:
- Shipping:
Inventory:4,275
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Product details
Overview
MRF9060NR1 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband common-source amplifier applications in 26 V base station equipment. It delivers 60 W PEP output power at 945 MHz, achieves 18.0 dB power gain and 40% drain efficiency (two-tone), and withstands 5:1 VSWR under full-power CW conditions.
For engineers reviewing the MRF9060NR1 datasheet, MRF9060NR1 pinout, MRF9060NR1 application, or MRF9060NR1 equivalent, this device is selected for high-reliability 930–960 MHz infrastructure amplifiers where thermal stability, ESD robustness, and broadband impedance matching are critical design requirements.
Technical Context
The MRF9060NR1 operates as a Class AB RF power amplifier with gate threshold voltage of 2.8 V (typ), forward transconductance of 5.3 S (typ), and characterized series-equivalent large-signal source/load impedances optimized for 930–960 MHz operation. Its TO-272-2 plastic package integrates an exposed heat slug for low 0.56 °C/W junction-to-case thermal resistance.
It features integrated ESD protection rated to Human Body Model Class 1, Machine Model M2, and Charge Device Model C6, and supports stable operation up to 200 °C junction temperature. The device is RoHS-compliant with lead-free terminations (N suffix) and qualified to Moisture Sensitivity Level 1 per JESD22-A113.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 60 W PEP at 945 MHz - enables single-device coverage of cellular UHF band amplification without combining |
| Power Gain | 18.0 dB (typ) at 945 MHz - reduces driver stage complexity and improves system-level noise figure |
| Drain Efficiency | 40% (two-tone, 945 MHz) - lowers thermal load and power supply demand in continuous-duty base station designs |
| VSWR Tolerance | 5:1 at 26 Vdc, 945 MHz, 60 W CW - ensures rugged operation into mismatched antenna loads without damage |
| Junction Temp Limit | 200 °C - allows high-power operation with conservative heatsinking in compact macrocell enclosures |
| Thermal Resistance | 0.56 °C/W (junction-to-case) - enables direct mounting to copper heatsinks for efficient thermal management |
| ESD Rating | HBM Class 1, CDM Class C6 - provides built-in protection against handling and board-level ESD events |
Pinout & Package
Package: TO-272-2 plastic case (Case 1337-03, Style 1), surface-mount/bolt-down configuration with exposed heat slug. Dimensions per Freescale drawing: D = 23.57–23.67 mm, E1 = 6.30–6.40 mm, A2 = 1.02–1.07 mm; pin 1 = Drain, pin 2 = Gate, pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | High-current RF output node | Connected to output matching network; requires low-inductance path to heatsink and RF ground |
| Pin 2 (Gate) | RF input control terminal | Bias-controlled via VGG; sensitive to ESD; requires DC blocking and gate stopper resistor |
| Pin 3 (Source) | Common reference and RF return path | Directly tied to ground plane; forms return path for RF current and bias current |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD Protection | HBM Class 1, CDM Class C6 - eliminates need for external ESD diodes in production PCB layout |
| 200 °C Capable Package | Plastic TO-272-2 with exposed thermal slug - supports high ambient temperature deployments without derating |
| Characterized Impedance Data | Series-equivalent Zsource/Zload provided at 930/945/960 MHz - accelerates matching network design and simulation |
| 5:1 VSWR Robustness | Rated at full 60 W CW, 26 V, 945 MHz - enables deployment in real-world antenna environments without circulator |
| Lead-Free & RoHS Compliant | N suffix, MSL Level 1 - supports automated reflow assembly and environmental compliance for global telecom equipment |
Applications
| Cellular Base Station PA | UHF Public Safety Transmitter |
|---|---|
|
Use Scenario: Final-stage power amplifier in 930–960 MHz macrocell base stations supporting GSM, LTE, and private radio standards. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor operating in Class AB common-source configuration. Use Value: Delivers 60 W PEP with −31.5 dBc IMD and 40% efficiency, reducing cooling requirements and improving spectral mask compliance. |
Use Scenario: High-reliability final amplifier in land-mobile radio (LMR) repeaters and emergency response transmitters. IC Role / Device Role / Timing Role: Ruggedized RF power MOSFET handling dynamic modulation and antenna VSWR variations. Use Value: Withstands 5:1 VSWR at full power and operates up to 200 °C junction temperature, ensuring uptime in harsh field environments. |
| Broadband Wireless Access | ISM Band Amplifier |
|
Use Scenario: Power amplifier in fixed wireless access (FWA) customer premises equipment operating in 900 MHz ISM-adjacent bands. IC Role / Device Role / Timing Role: Broadband RF transistor with flat gain across 930–960 MHz, matched using microstrip networks. Use Value: 18 dB gain and −14.5 dB input return loss simplify broadband matching, reducing component count and tuning time. |
Use Scenario: High-power amplifier in industrial heating, plasma generation, or medical diathermy systems operating near 945 MHz. IC Role / Device Role / Timing Role: Continuous-wave RF power switch delivering stable 60 W output under thermal stress. Use Value: Low RθJC (0.56 °C/W) and 223 W total dissipation rating enable reliable CW operation with passive heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF9060NBR1 | Same die, TO-270-2 package (Case 1265-08); higher thermal resistance (0.62 °C/W vs. 0.56 °C/W); identical electrical specs | Preferred for through-hole prototyping or legacy board layouts requiring TO-270 footprint | Select MRF9060NBR1 only when mechanical compatibility with TO-270-2 mounting is required; otherwise MRF9060NR1 offers superior thermal performance. |
| PD57060-E | STMicroelectronics 60 W LDMOS; 28 V operation; slightly lower gain (17.5 dB typ); different gate biasing (VGS(th) = 1.5 V) | Used in newer 28 V base station architectures; requires revised gate drive and bias network design | Choose PD57060-E only when migrating to 28 V supply rails or leveraging ST's dual-gate LDMOS process for improved linearity at reduced bias current. |
Compared with MRF9060NBR1, the MRF9060NR1 provides lower thermal resistance and surface-mount compatibility; compared with PD57060-E, it retains 26 V compatibility and simpler gate biasing but requires more careful thermal interface design due to its older lateral MOSFET architecture.
Availability
MRF9060NR1 is available at Aetrix Electronics and suitable for cellular base station PA, public safety transmitter, and broadband wireless access applications requiring stable component supply, long lifecycle support, and traceable sourcing for telecom infrastructure programs.
Supply support for MRF9060NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power transistors for wireless infrastructure, emphasizing ruggedness, thermal reliability, and broadband performance.
The MRF9060NR1 belongs to Freescale's MRF9000N family of lateral N-channel RF power MOSFETs, engineered specifically for 26 V, 900 MHz-class base station amplifiers demanding high PEP output and VSWR tolerance.
FAQ
What is the maximum operating frequency range for the MRF9060NR1?
The MRF9060NR1 is characterized and specified for broadband operation from 930 MHz to 960 MHz, with typical performance data provided at 930 MHz, 945 MHz, and 960 MHz. Its lateral MOSFET structure supports stable gain and efficiency across this UHF band, making it suitable for cellular and public safety applications within this range. The device is not rated for operation beyond 1 GHz.
Does the MRF9060NR1 require external ESD protection?
No, the MRF9060NR1 includes integrated ESD protection rated to Human Body Model Class 1, Machine Model M2, and Charge Device Model C6. This built-in protection eliminates the need for external ESD diodes in most base station PCB layouts, provided proper handling and grounding practices are followed during assembly and test.
What is the recommended gate bias voltage for linear operation of the MRF9060NR1?
The MRF9060NR1 specifies a gate quiescent voltage (VGS(Q)) of 3.7 V (typ) at IDQ = 450 mA and VDD = 26 Vdc. For Class AB linear operation, a stable, low-noise VGG supply set to approximately 3.5–4.0 V is recommended, with appropriate decoupling and gate stopper resistors to prevent oscillation and ensure bias stability over temperature.
How does the thermal performance of the MRF9060NR1 compare to the MRF9060NBR1?
The MRF9060NR1 has a junction-to-case thermal resistance (RθJC) of 0.56 °C/W, while the MRF9060NBR1 (TO-270-2 package) is rated at 0.62 °C/W. This 10.7% lower thermal resistance enables the MRF9060NR1 to achieve lower junction temperatures under identical power dissipation, improving reliability and allowing tighter thermal design margins in surface-mount base station modules.
Is the MRF9060NR1 suitable for continuous-wave (CW) operation at full rated power?
Yes, the MRF9060NR1 is rated for 60 W CW operation at 945 MHz and 26 Vdc, with demonstrated capability to handle 5:1 VSWR under those conditions. Its 223 W total device dissipation rating and 200 °C maximum junction temperature allow sustained CW use when mounted on a properly sized heatsink with thermal interface material meeting the 0.56 °C/W RθJC specification.
MRF9060NR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-270AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 18dB
- Voltage - Test:
- 26 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 450 mA
- Power - Output:
- 60W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-270-2
MRF9060NR1 FAQ
1.How can I place an order for MRF9060NR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF9060NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF9060NR1 reliable?
The price and inventory of MRF9060NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF9060NR1 is usually 5 days.
3.What payment methods are accepted for MRF9060NR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF9060NR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF9060NR1?
MRF9060NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF9060NR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF9060NR1?
For technical support, including MRF9060NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF9060NR1 requirements.
6.How does Aetrix verify that MRF9060NR1 is sourced from the original manufacturer or authorized distributors?
All MRF9060NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF9060NR1 meets industry standards.
7.What is the process for return or replacement of MRF9060NR1?
All MRF9060NR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF9060NR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF9060NR1 part is unused and in its original packaging.
Return procedure for MRF9060NR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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