NXP Semiconductors MRFE6P3300HR3

Overview

MRFE6P3300HR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband large-signal amplifier applications in 32 V analog/digital TV transmitters. It delivers 270 W PEP output at 860 MHz, with 20.4 dB power gain, 44.8% drain efficiency, and -28.8 dBc intermodulation distortion under narrowband two-tone test conditions.

For engineers reviewing the MRFE6P3300HR3 datasheet, MRFE6P3300HR3 pinout, MRFE6P3300HR3 application, or MRFE6P3300HR3 equivalent, this device requires push-pull configuration, operates up to 32 VDD, handles 10:1 VSWR at 860 MHz, and is internally matched for 470–860 MHz commercial broadcast systems.

Technical Context

This RF power transistor uses a laterally diffused MOS (LDMOS) structure optimized for high-voltage, high-power operation in common-source amplifier topologies. Its internal matching network targets 50 Ω source and load impedances across 470–860 MHz, with series-equivalent impedance characterization provided for design-in accuracy.

The device is qualified for 32 VDC drain supply, features integrated ESD protection rated Class 3B HBM, and is thermally characterized with junction-to-case thermal resistance as low as 0.23 °C/W at 300 W CW - enabling robust thermal management in high-reliability broadcast amplifiers.

Key Specifications

Pinout & Package

MRFE6P3300HR3 is housed in the NI-860C3 package (Case 375G-04, Style 1), a ceramic/metal flanged package with five terminals optimized for RF power dissipation and thermal stability. The flange serves as the primary thermal path and must be mounted to a heatsink with controlled torque (recommended bolt center: 1.140″).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRFE6P3300HR3, MRFE6P3300HR5 offers identical RF performance in a smaller reel format, while AFM30500N trades ease of integration and broadcast-optimized linearity for wider bandwidth and higher peak power - making MRFE6P3300HR3 the preferred choice for production UHF TV transmitter final stages.

Availability

MRFE6P3300HR3 is available at Aetrix Electronics and suitable for UHF broadcast transmitters, digital TV headends, and high-power RF test instrumentation requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for MRFE6P3300HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, automotive, and secure connectivity solutions, with deep heritage in RF power technology from its Freescale acquisition.

The MRFE6P3300HR3 belongs to NXP's MRFE6P family of LDMOS RF power transistors, engineered specifically for high-efficiency, high-ruggedness UHF broadcast amplifier applications demanding reliability under continuous high-VSWR conditions.

FAQ

What is the maximum drain voltage rating for MRFE6P3300HR3?

The MRFE6P3300HR3 has a maximum drain-source voltage (VDSS) rating of +66 VDC. However, it is qualified and characterized for operation up to 32 VDC in standard applications - exceeding this voltage risks permanent device failure and voids reliability guarantees. All published performance data, including 270 W PEP output and 44.8% efficiency, assume VDD = 32 VDC.

Can MRFE6P3300HR3 be used in single-ended amplifier configurations?

No, MRFE6P3300HR3 is explicitly designed for push-pull operation only, as stated in its official documentation. Its internal layout, gate terminal configuration (dual gate pins), and impedance characteristics assume balanced differential drive. Attempting single-ended use violates the device's design intent and may cause thermal imbalance, instability, or premature failure.

What thermal resistance value applies to MRFE6P3300HR3 at full 300 W CW output?

At 300 W CW with case temperature maintained at 80°C, the MRFE6P3300HR3 exhibits a junction-to-case thermal resistance (RθJC) of 0.23 °C/W. This value is measured under controlled lab conditions and assumes proper mounting with recommended torque and thermal interface material - actual system-level RθJA will depend on heatsink design and airflow.

Does MRFE6P3300HR3 include integrated ESD protection, and what standards does it meet?

Yes, MRFE6P3300HR3 includes integrated ESD protection meeting Human Body Model Class 3B (≥8 kV), Machine Model Class C, and Charge Device Model Class IV. These ratings are verified per JESD22-A114, EIA/JESD22-A115, and JESD22-C101 - eliminating the need for external gate protection diodes in standard handling and assembly environments.

What is the gate threshold voltage range for MRFE6P3300HR3 at 25°C?

The gate threshold voltage (VGS(th)) for MRFE6P3300HR3 is specified from 1.0 V to 3.0 V at VDS = 10 VDC and ID = 350 μADC, with a typical value of 2.2 V. This parameter defines the minimum gate voltage required to initiate conduction and is critical for setting accurate quiescent bias - the device's typical gate quiescent voltage (VGS(Q)) is 2.8 V at IDQ = 1600 mADC and VDD = 32 VDC.