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NXP Semiconductors MRFE6P3300HR5
- Part No.:
- MRFE6P3300HR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-860C3
- Datasheet:
-
MRFE6P3300HR5.pdf
- Description:
- RF MOSFET LDMOS 32V NI860C3
- Quantity:
- Payment:
- Shipping:
Inventory:5,071
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Product details
Overview
MRFE6P3300HR5 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband large-signal common-source amplifier applications in 32 V analog/digital TV transmitters operating from 470 to 860 MHz. It delivers 270 W PEP output at 860 MHz with 20.4 dB power gain and 44.8% drain efficiency under VDD = 32 V, IDQ = 1600 mA conditions.
For engineers reviewing the MRFE6P3300HR5 datasheet, MRFE6P3300HR5 pinout, MRFE6P3300HR5 application, or MRFE6P3300HR5 equivalent, key selection factors include ruggedness for 10:1 VSWR operation at 32 V/860 MHz, internal input/output matching, push-pull configuration requirement, ESD protection class (HBM 3B), and thermal resistance of 0.27 °C/W at 100 W CW.
Technical Context
This device operates as a high-power RF amplifier stage in terrestrial broadcast infrastructure, specifically optimized for narrowband and OFDM-based DVB-T signals in the UHF band. Its lateral LDMOS structure supports 225 °C maximum junction temperature and is qualified for continuous 32 V drain supply operation.
Internally matched design eliminates external input/output matching networks for standard 50 Ω systems, while series-equivalent large-signal impedance parameters (e.g., Zsource = 4.22 − j6.38 Ω, Zload = 5.18 − j0.58 Ω at 860 MHz) enable precise broadband circuit synthesis. Push-pull operation is mandatory per design specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 470–860 MHz - Validated for UHF TV broadcast band operation, including DVB-T 8K mode OFDM at 860 MHz center frequency. |
| Output Power (PEP) | 270 W @ 860 MHz - Delivers full rated peak envelope power in narrowband two-tone test with 6 MHz tone spacing. |
| Power Gain | 20.4 dB @ 860 MHz - Enables single-stage amplification with minimal driver stage complexity in transmitter final stages. |
| Drain Efficiency | 44.8% @ 860 MHz - Reduces thermal load and power supply requirements in high-duty-cycle broadcast applications. |
| VSWR Tolerance | 10:1 @ 32 Vdc, 860 MHz, 3 dB overdrive - Ensures operational robustness against antenna mismatch in deployed transmitter systems. |
| Junction Temperature | 225 °C max - Supports high-reliability operation under sustained RF stress; MTTF calculated at 10⁵+ hours at 150 °C TJ. |
| Thermal Resistance | 0.27 °C/W @ 100 W CW - Enables compact heatsink design when mounted on copper baseplate per NI-860C3 mechanical spec. |
| ESD Rating | HBM Class 3B (≥8 kV), MM Class C, CDM Class IV - Provides production-line and field handling resilience without external protection circuits. |
Pinout & Package
MRFE6P3300HR5 is housed in the NI-860C3 package (Case 375G-04, Style 1), a flanged ceramic/metal hermetic package with five terminals optimized for high-power RF thermal and electrical performance. Mounting requires torque-controlled screws (recommended bolt center: 1.140″) and thermally conductive interface material.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | High-current RF output node | Connected internally to both drain regions; must be DC-grounded via low-inductance path to heatsink; primary heat dissipation path. |
| 2. Drain | High-current RF output node | Second drain terminal tied internally to Pin 1; used for symmetrical current sharing and thermal spreading in push-pull layout. |
| 3. Gate | RF input control terminal | Accepts bias and RF drive; requires stable negative/zero gate voltage during operation; sensitive to ESD and parasitic oscillation. |
| 4. Gate | RF input control terminal | Second gate terminal tied internally to Pin 3; enables balanced push-pull gate drive with minimized common-mode imbalance. |
| 5. Source | Common reference and return path | DC and RF return for both drain and gate paths; must be low-impedance connection to ground plane; critical for stability and IMD performance. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched I/O | Eliminates discrete matching networks for 50 Ω systems-reduces PCB area, component count, and tuning time in production TV transmitter modules. |
| Push-pull only operation | Guarantees optimal linearity and thermal symmetry; prevents single-ended instability and uneven junction heating in high-power UHF amplifiers. |
| Rugged 10:1 VSWR capability | Withstands severe antenna mismatches without degradation or failure-critical for outdoor broadcast sites with variable environmental coupling. |
| Series-equivalent impedance data | Provides verified Zsource/Zload values across 830–890 MHz-enables accurate harmonic termination and broadband load-pull optimization. |
| Integrated ESD protection | Meets HBM Class 3B (≥8 kV) without external diodes-simplifies handling, assembly, and field service while maintaining RF performance integrity. |
| RoHS-compliant packaging | NI-860C3 ceramic/metal construction with lead-free terminations-meets global environmental compliance for broadcast equipment deployment. |
Applications
| Analog TV Transmitter Final Stage | Digital TV (DVB-T) Broadcast Amplifier |
|---|---|
|
Use Scenario: High-power UHF transmitter final amplifier operating at 32 V supply in headend or tower-mounted equipment. IC Role / Device Role / Timing Role: RF power MOSFET delivering 270 W PEP output in common-source push-pull configuration. Use Value: Achieves 44.8% drain efficiency and −28.8 dBc IMD at 860 MHz, enabling air-cooled system designs with reduced AC power draw and thermal management cost. |
Use Scenario: Single-carrier and 8K-mode OFDM DVB-T broadcast transmitter operating at 60–120 W average power. IC Role / Device Role / Timing Role: Final-stage RF power amplifier supporting 64-QAM modulation with 5-symbol guard interval. Use Value: Maintains ACPR < −45 dBc at 3.9 MHz offset and 20.4 dB gain across 820–900 MHz, ensuring spectral mask compliance for regulatory certification. |
| UHF Bandwidth-Extended Repeater | Professional Wireless Video Link Amplifier |
|
Use Scenario: Bidirectional repeater system covering 470–860 MHz for rural coverage extension with high linearity requirements. IC Role / Device Role / Timing Role: High-gain, broadband RF power amplifier in transmit chain with integrated input/output matching. Use Value: Delivers >19 dB gain flatness and < −27 dBc third-order IMD across full band-minimizes intermodulation distortion in multi-channel repeater environments. |
Use Scenario: Mobile ENG (Electronic News Gathering) uplink transmitter requiring rugged, high-efficiency RF amplification. IC Role / Device Role / Timing Role: Final-stage power device operating in pulsed-CW mode (12 μs on, 1% duty cycle) at 860 MHz. Use Value: Supports P1dB = 55.15 dBm (327.9 W) and handles transient overloads without latch-up-ensures reliability in field-deployed video transmission gear. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6P3300HR3 | Identical die and electrical specs; differs only in tape-and-reel quantity (250 units vs. 50 units for R5). | Same UHF broadcast use cases; identical thermal, RF, and ruggedness performance. | Select MRFE6P3300HR3 for higher-volume production runs where reel change frequency must be minimized. |
| MRF6P21190HR5 | Lower Pout (190 W PEP), same 32 V operation, 470–860 MHz range, but higher gain (22.5 dB typ) and improved IMD (−32 dBc). | Better suited for space-constrained or efficiency-critical DVB-T repeaters where 270 W is excessive. | Choose MRF6P21190HR5 when system-level linearity and thermal density outweigh raw power requirements. |
Compared with MRFE6P3300HR5, MRFE6P3300HR3 offers identical RF performance and ruggedness in a higher-quantity reel format, while MRF6P21190HR5 trades peak power for superior linearity and gain-making it preferable for mid-power OFDM repeaters where spectral purity is prioritized over absolute output.
Availability
MRFE6P3300HR5 is available at Aetrix Electronics and suitable for analog TV transmitters, DVB-T broadcast amplifiers, UHF repeaters, and professional wireless video links requiring stable component supply and long-lifecycle support.
Supply support for MRFE6P3300HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor components for broadcast, industrial, and aerospace applications.
The MRFE6P3300HR5 belongs to Freescale's MRFE6P family of lateral N-channel RF power MOSFETs, engineered specifically for UHF television transmitter final stages demanding high gain, broadband efficiency, and unmatched ruggedness.
FAQ
What is the maximum operating voltage for MRFE6P3300HR5?
The MRFE6P3300HR5 is qualified for continuous operation up to +66 VDS and +12 VGS, but its specified functional rating is 32 VDD. Operation beyond 32 V is not validated for RF performance or reliability; all published gain, efficiency, and IMD data assume VDD = 32 Vdc. Exceeding this voltage voids guaranteed specifications.
Is MRFE6P3300HR5 pin-compatible with MRFE6P3300HR3?
Yes, MRFE6P3300HR5 is fully pin-compatible with MRFE6P3300HR3-both share identical NI-860C3 package (Case 375G-04, Style 1), identical pinout (Drain-Drain-Gate-Gate-Source), and identical mechanical mounting dimensions. The only difference is tape-and-reel quantity: R5 = 50 units, R3 = 250 units.
Does MRFE6P3300HR5 support single-ended operation?
No, MRFE6P3300HR5 is explicitly designed for push-pull operation only. The datasheet states this as a hard requirement: "Designed for Push-Pull Operation Only." Single-ended use violates thermal and linearity design assumptions and risks instability, asymmetrical heating, and premature failure.
What thermal interface material is recommended for MRFE6P3300HR5?
Freescale recommends a thermally conductive, electrically insulating interface material (e.g., Bergquist Sil-Pad 1000 or Parker Chomerics Thermasil 300) between the MRFE6P3300HR5 flange and heatsink. Mounting torque must be controlled to 10–12 in-lb per screw to maintain 0.27 °C/W RθJC and avoid ceramic cracking or solder joint fatigue.
Can MRFE6P3300HR5 be used in S-band (2–4 GHz) applications?
No, MRFE6P3300HR5 is characterized and optimized exclusively for 470–860 MHz operation. Its gain drops sharply above 900 MHz, and internal matching is ineffective beyond UHF. For S-band, Freescale's MRF6V2300N or NXP's AFT09MS007NT1 are appropriate alternatives with validated 2–4 GHz performance.
MRFE6P3300HR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-860C3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 857MHz ~ 863MHz
- Gain:
- 20.4dB
- Voltage - Test:
- 32 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.6 A
- Power - Output:
- 270W
- Voltage - Rated:
- 66 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-860C3
MRFE6P3300HR5 FAQ
1.How can I place an order for MRFE6P3300HR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFE6P3300HR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFE6P3300HR5 reliable?
The price and inventory of MRFE6P3300HR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFE6P3300HR5 is usually 5 days.
3.What payment methods are accepted for MRFE6P3300HR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFE6P3300HR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFE6P3300HR5?
MRFE6P3300HR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFE6P3300HR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFE6P3300HR5?
For technical support, including MRFE6P3300HR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFE6P3300HR5 requirements.
6.How does Aetrix verify that MRFE6P3300HR5 is sourced from the original manufacturer or authorized distributors?
All MRFE6P3300HR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFE6P3300HR5 meets industry standards.
7.What is the process for return or replacement of MRFE6P3300HR5?
All MRFE6P3300HR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRFE6P3300HR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFE6P3300HR5 part is unused and in its original packaging.
Return procedure for MRFE6P3300HR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRFE6P3300HR5 Tags
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