NXP Semiconductors MRFE6S9160HR3

Overview

MRFE6S9160HR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for base station multicarrier amplifier applications in 865–960 MHz bands. It delivers 35 W average output power at 880 MHz under N-CDMA modulation, with 21 dB power gain, 31% drain efficiency, and −46.8 dBc ACPR at ±750 kHz offset - optimized for GSM, N-CDMA, and EDGE infrastructure transmitters.

For engineers reviewing the MRFE6S9160HR3 datasheet, MRFE6S9160HR3 pinout, MRFE6S9160HR3 application, or MRFE6S9160HR3 equivalent, key selection criteria include ruggedness (10:1 VSWR capability at 32 Vdc), internal input matching, RoHS-compliant NI-780S package, and verified thermal resistance of 0.33 °C/W at 35 W CW operation.

Technical Context

This device operates as a high-efficiency RF power amplifier stage in cellular base station final output stages. Its lateral LDMOS structure supports 28 Vdc drain supply, 1200 mA quiescent drain current, and is characterized with series-equivalent large-signal impedance parameters (e.g., Z_source = 1.26 + j0.15 Ω, Z_load = 0.64 − j1.05 Ω at 880 MHz) for precise external matching network design.

Thermally, it features a junction-to-case thermal resistance of 0.33 °C/W at 35 W CW (case temperature 73°C), rated for continuous operation up to 225°C junction temperature and 150°C case temperature. ESD protection meets JESD22-A114 Class 1A (HBM), JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM).

Key Specifications

Pinout & Package

MRFE6S9160HR3 is housed in the NI-780S metal-ceramic flanged package (Case 465A-06, Style 1), featuring a hermetically sealed ceramic insulator and copper-tungsten lid. The package provides low-inductance, high-power RF interconnects and direct thermal path from die to flange.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRFE6S9160HR3, MRF6S9160NR1 offers superior thermal performance at higher power but requires PCB redesign due to NI-780 vs. NI-780S mechanical differences; PD85008-E provides competitive RF specs in a lower-cost TO package but omits documented VSWR survival and ESD robustness metrics critical for carrier-grade deployments.

Availability

MRFE6S9160HR3 is available at Aetrix Electronics and suitable for macrocell base station transmitters, GSM/EDGE multicarrier amplifiers, N-CDMA pilot channel modules, and wireless infrastructure test benches requiring stable component supply and long-term lifecycle support.

Supply support for MRFE6S9160HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a fabless semiconductor company specializing in RF power, automotive, and microcontroller technologies, with deep expertise in cellular infrastructure silicon.

The MRFE6S9160HR3 belongs to Freescale's MRFE6Sxx RF power LDMOS family, engineered specifically for high-reliability, high-efficiency 800–1000 MHz base station amplifiers where ruggedness, linearity, and thermal stability are mission-critical.

FAQ

What is the maximum drain supply voltage for the MRFE6S9160HR3?

The MRFE6S9160HR3 is qualified for operation up to +66 V_DS absolute maximum, but its specified DC operating condition is 28 V_DD. Freescale explicitly qualifies the device for continuous use at up to 32 V_DD, and all published RF performance data (e.g., 35 W avg. output, 21 dB gain) are measured at 28 V_DD. Exceeding 32 V_DD voids reliability guarantees and risks permanent damage.

Does the MRFE6S9160HR3 require external input matching?

No, the MRFE6S9160HR3 is internally matched for 50 Ω systems across 865–960 MHz. Its input impedance is stabilized by on-die matching, eliminating discrete input matching components in standard configurations. However, fine-tuning may be needed for narrowband optimization or harmonic suppression - refer to the published Z_source values (e.g., 1.26 + j0.15 Ω at 880 MHz) for network synthesis.

What is the thermal resistance (R_θJC) of the MRFE6S9160HR3?

The MRFE6S9160HR3 has a junction-to-case thermal resistance of 0.33 °C/W when operated at 35 W CW with case temperature maintained at 73°C. This value is measured per AN1955 methodology and is specific to the NI-780S package (Case 465A-06). At higher power levels (e.g., 160 W CW), the R_θJC drops to 0.31 °C/W - but that rating applies only to the NI-780 variant (MRF6S9160NR1), not the MRFE6S9160HR3.

Is the MRFE6S9160HR3 suitable for LTE applications?

The MRFE6S9160HR3 was characterized for N-CDMA, GSM, and EDGE - not LTE. While its 865–960 MHz frequency coverage overlaps LTE Band 8 (880–915 MHz UL / 925–960 MHz DL), its linearity (ACPR −46.8 dBc) and adjacent channel leakage ratio (ACLR) were not validated against LTE OFDMA signal profiles or 3GPP ACLR masks. Use requires full system-level verification including digital pre-distortion calibration.

What does the "R3" suffix indicate in MRFE6S9160HR3?

Per Freescale documentation, the "R3" suffix denotes tape-and-reel packaging: 250 units per 56 mm wide, 13-inch diameter reel. This format is optimized for automated SMT placement in high-volume RF power amplifier module manufacturing. The "HR3" designation distinguishes it from the "HSR3" variant (same die, NI-780 package), confirming the NI-780S mechanical form factor and associated thermal characteristics.