NXP Semiconductors MRFE6S9160HR5

Overview

MRFE6S9160HR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for base station multicarrier amplifier applications in 865–960 MHz bands. It delivers 35 W average output power at 880 MHz under N-CDMA modulation, with 21 dB power gain, 31% drain efficiency, and −46.8 dBc ACPR at ±750 kHz offset - optimized for GSM, GSM EDGE, and N-CDMA infrastructure transmitters.

For engineers reviewing the MRFE6S9160HR5 datasheet, MRFE6S9160HR5 pinout, MRFE6S9160HR5 application, or MRFE6S9160HR5 equivalent, key selection criteria include ruggedness under 10:1 VSWR at 32 Vdc, internal input matching, RoHS-compliant NI-780 package, and verified thermal resistance of 0.31 °C/W (junction-to-case, 160 W CW).

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure with integrated ESD protection (HBM Class 1A), qualified for continuous operation up to 32 VDD. Its series-equivalent large-signal impedance is characterized across 850–910 MHz (e.g., Z_load = 0.64 − j1.05 Ω at 880 MHz), enabling stable broadband matching in 50 Ω systems.

The MRFE6S9160HR5 operates with fixed quiescent drain current (I_DQ = 1200 mA) and gate bias (V_GS(Q) = 3 Vdc), supporting both single-carrier and multicarrier N-CDMA waveforms. Thermal design is guided by a maximum junction temperature of 225°C and validated MTTF modeling per AN1955.

Key Specifications

Pinout & Package

MRFE6S9160HR5 is housed in the NI-780 metal-ceramic flanged package (Case 465-06, Style 1), featuring a thermally enhanced copper-tungsten base and ceramic lid. The 3-pin configuration supports high-power RF operation with low-inductance source grounding and direct-flange thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFE6S9160HR5, the HSR3 variant trades thermal performance for compactness, while AFM905S increases output power at the cost of matching flexibility and gate drive margin - making MRFE6S9160HR5 optimal for balanced 35 W, low-risk, production-ready GSM/CDMA PA designs.

Availability

MRFE6S9160HR5 is available at Aetrix Electronics and suitable for GSM base station transmitters, N-CDMA macrocell amplifiers, and 900 MHz LTE FDD PA modules requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MRFE6S9160HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its Freescale acquisition.

The MRFE6S9160HR5 belongs to NXP's RF Power LDMOS portfolio, engineered specifically for cellular infrastructure applications demanding high linearity, ruggedness, and thermal reliability in 700–3800 MHz bands.

FAQ

What is the maximum drain-source voltage rating for MRFE6S9160HR5?

The MRFE6S9160HR5 has a maximum drain-source voltage (V_DSS) rating of +66 Vdc, with a minimum of −0.5 Vdc. This rating supports safe operation under transient overvoltage conditions common in base station PA stages, including load mismatch events and switching transients. The device is qualified for continuous operation up to 32 VDD, aligning with standard 28 V telecom power rails plus headroom.

Does MRFE6S9160HR5 require external input matching components?

No, MRFE6S9160HR5 is internally matched for 50 Ω input impedance across 865–960 MHz, delivering ≥17 dB input return loss in typical test fixtures. This eliminates the need for external input matching networks in most GSM/CDMA applications, simplifying layout and improving repeatability. Output matching remains application-specific and must be designed per load impedance data (e.g., Z_load = 0.64 − j1.05 Ω at 880 MHz).

What thermal resistance value applies to MRFE6S9160HR5 in continuous-wave operation?

For MRFE6S9160HR5 operating at 160 W CW with case temperature at 81°C, the junction-to-case thermal resistance (R_θJC) is 0.31 °C/W. This value is measured per AN1955 methodology and enables accurate junction temperature prediction: T_J = T_C + (P_diss × R_θJC). At 35 W avg. N-CDMA output, dissipation is ~79 W, yielding ~25°C rise above case temperature.

Is MRFE6S9160HR5 compatible with lead-free reflow soldering processes?

Yes, MRFE6S9160HR5 is RoHS compliant and qualified for lead-free reflow soldering per IPC-J-STD-020. Its NI-780 package withstands peak temperatures up to 260°C for 30 seconds. Proper thermal profiling is essential to avoid thermal shock to the ceramic lid and ensure void-free solder joints on the flange - refer to NXP's SOLDERING NOTES document AN11857 for recommended profiles.

How does MRFE6S9160HR5 perform under multicarrier N-CDMA signals?

MRFE6S9160HR5 is characterized for multicarrier N-CDMA operation, delivering 35 W avg. output with −46.8 dBc ACPR at ±750 kHz offset and 21 dB power gain at 880 MHz. Its ruggedness design maintains stability under 10:1 VSWR with 3 dB overdrive, and gain flatness of 0.5 dB over 35 MHz bandwidth ensures consistent channel response across carrier aggregation scenarios.