NXP Semiconductors MRFE6S9200HR3

Overview

MRFE6S9200HR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband base station amplifiers operating up to 1000 MHz. It delivers 58 W average output power at 880 MHz under W-CDMA conditions (28 V, 1400 mA IDQ), with 21 dB power gain, 35% drain efficiency, and -40 dBc ACPR at 5 MHz offset in 3.84 MHz bandwidth - optimized for 28 V commercial cellular infrastructure.

For engineers reviewing the MRFE6S9200HR3 datasheet, MRFE6S9200HR3 pinout, MRFE6S9200HR3 application, or MRFE6S9200HR3 equivalent, key selection criteria include ruggedness against 10:1 VSWR at 32 V, internal input matching, ESD protection per JESD22-A114 Class 1C, RoHS-compliant NI-880S package, and verified W-CDMA linearity performance at 880 MHz.

Technical Context

This device operates as a common-source RF power amplifier stage in high-linearity, high-efficiency macrocell and microcell base station transmitters. Its lateral LDMOS structure supports stable operation at junction temperatures up to 225°C, with thermal resistance RθJC = 0.33°C/W at 58 W CW, and is characterized using series-equivalent large-signal impedance parameters (e.g., Zsource = 3.70 − j4.45 Ω, Zload = 0.81 + j0.16 Ω at 880 MHz).

The MRFE6S9200HR3 integrates on-die ESD protection and is qualified for continuous operation up to 32 VDD. It is internally matched for 50 Ω systems at the gate input, eliminating external input matching networks in typical applications, while requiring external output matching per application-specific load impedance requirements.

Key Specifications

Pinout & Package

MRFE6S9200HR3 is housed in the NI-880S metal-ceramic flanged package (Case 465C-02, Style 1), optimized for high-frequency RF power dissipation and thermal management in base station modules. The package features a copper-tungsten flange, ceramic insulator, and gold-plated lid, with dimensions A = 0.905–0.915″ (22.99–23.24 mm), B = 0.535–0.545″ (13.60–13.80 mm), and flange thickness H = 0.057–0.067″ (1.45–1.70 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6S9200NR1 and MRFE6P6060HSR5, the MRFE6S9200HR3 offers superior W-CDMA linearity at 880 MHz, tighter thermal resistance control for 58 W avg. operation, and validated 10:1 VSWR ruggedness - making it the preferred choice for 800–900 MHz macro/micro base station final PAs where PAR handling and reliability are critical.

Availability

MRFE6S9200HR3 is available at Aetrix Electronics and suitable for macrocell base stations, microcell small cells, digital predistortion development platforms, and RF test bench amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MRFE6S9200HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its acquisition of Freescale Semiconductor.

The MRFE6S9200HR3 belongs to NXP's RF Power LDMOS portfolio, engineered specifically for high-efficiency, high-linearity, and high-ruggedness operation in 4G/LTE and legacy W-CDMA cellular infrastructure transmitters operating below 1 GHz.

FAQ

What is the maximum DC drain voltage rating for MRFE6S9200HR3?

The MRFE6S9200HR3 has a maximum drain-source voltage rating (VDSS) of +66 Vdc, with a minimum of -0.5 Vdc. However, the device is qualified for continuous operation up to 32 VDD, and its typical application uses 28 Vdc. Exceeding 32 V in sustained operation may impact reliability and is outside the qualified stress limits defined in the datasheet.

Does MRFE6S9200HR3 require external input matching components?

No, the MRFE6S9200HR3 is internally matched on the input side for 50 Ω systems, as confirmed in Table 4 footnote "Part is internally matched on input." This eliminates the need for external input matching networks in standard 50 Ω test fixtures and simplifies PCB layout - though output matching remains application-dependent and must be designed externally per load impedance requirements.

What is the thermal resistance (RθJC) of MRFE6S9200HR3 at its rated 58 W average output power?

At 58 W CW operation with case temperature TC = 79°C, the MRFE6S9200HR3 exhibits a thermal resistance RθJC of 0.33°C/W. This value is measured under specified test conditions and is critical for heatsink sizing in base station PA modules where junction temperature must remain ≤225°C under worst-case ambient and airflow conditions.

Is MRFE6S9200HR3 suitable for LTE applications?

Yes, the MRFE6S9200HR3 supports LTE FDD Band 5 (824–849 MHz UL / 869–894 MHz DL) and Band 8 (880–915 MHz UL / 925–960 MHz DL) due to its 865–900 MHz broadband performance, including 21 dB gain, 35% efficiency, and -40 dBc ACPR at 5 MHz offset. Its W-CDMA characterization serves as a conservative proxy for LTE linearity validation.

What does the 'R3' suffix indicate in MRFE6S9200HR3?

The 'R3' suffix denotes tape-and-reel packaging: 250 units per 56 mm, 13-inch reel. This format supports automated SMT placement in high-volume telecom infrastructure manufacturing. The 'H' in the part number identifies the NI-880S package variant (Case 465C-02), distinguishing it from the NI-880 version (MRFE6S9200HSR3 uses same suffix but different case outline).