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NXP Semiconductors MRFE6VP5600HSR5
- Part No.:
- MRFE6VP5600HSR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230-4S
- Datasheet:
-
MRFE6VP5600HSR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:1,199
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Product details
Overview
MRFE6VP5600HSR5 from NXP Semiconductors (formerly Freescale) is a high-ruggedness, 600 W pulsed peak / 600 W CW, N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband industrial, broadcast, aerospace, and land mobile amplifiers operating from 1.8 to 600 MHz. It features unmatched input/output impedance, 50 V operation, 65:1 VSWR tolerance at 230 MHz, and RoHS-compliant NI-1230S package.
For engineers reviewing the MRFE6VP5600HSR5 datasheet, MRFE6VP5600HSR5 pinout, MRFE6VP5600HSR5 application, or MRFE6VP5600HSR5 equivalent, key selection criteria include its 74.6% drain efficiency at 600 W pulsed output, 25.0 dB power gain at 230 MHz, thermal resistance of 0.12 °C/W (CW), and gate threshold voltage of 2.2 V typical - all critical for high-reliability RF PA design in mismatched load environments.
Technical Context
This device implements a laterally diffused MOS (LDMOS) structure optimized for broadband RF power amplification with enhanced ruggedness. Its unmatched input and output allow wideband matching without external tuning networks across 1.8–600 MHz, supporting both single-ended and push-pull configurations.
It operates at VDD = 50 V with quiescent drain current IDQ = 100 mA, delivering 600 W average CW or 600 W peak pulsed (100 μs, 20% duty cycle) output. Thermal design is enabled by low RθJC = 0.12 °C/W under CW conditions and integrated ESD protection rated Class 2 HBM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| POUT (CW) | 600 W average output power at 230 MHz, enabling high-power analog/digital broadcast transmitters |
| POUT (Pulsed) | 600 W peak (100 μs pulse width, 20% duty cycle), suitable for radar and pulsed industrial heating |
| Gps | 25.0 dB typical power gain at 230 MHz, reducing driver stage complexity in multi-stage PAs |
| ηD | 75.2% typical drain efficiency (CW), minimizing heatsink size and cooling requirements |
| VSWR Tolerance | 65:1 at 230 MHz, 50 Vdc, all phase angles - enables stable operation under severe load mismatch |
| VGS(th) | 2.2 V typical gate threshold voltage, supporting precise Class AB biasing with low-voltage control circuitry |
| RθJC (CW) | 0.12 °C/W junction-to-case thermal resistance, allowing direct mounting to cold plates in high-power systems |
Pinout & Package
MRFE6VP5600HSR5 is housed in the NI-1230S package (CASE 375E-04, STYLE 1), a ceramic/metal flanged package with isolated source terminals and optimized RF layout for push-pull configurations. The package features a thermally efficient copper base and gold-plated leads compatible with high-reliability solder reflow or eutectic die attach.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFin/VGS) | Gate input (left side) | RF signal input terminal; requires DC blocking and gate bias network; symmetric with Pin 4 for balanced drive |
| 2 (RFout/VDS) | Drain output (left side) | High-power RF output node; connects to output matching network; shares common case ground path |
| 3 (Case) | Source/ground reference | Electrically isolated metal flange; serves as RF ground, thermal path, and mechanical mounting surface |
| 4 (RFin/VGS) | Gate input (right side) | Second gate terminal for push-pull configuration; matched to Pin 1 for balanced operation |
| 5 (RFout/VDS) | Drain output (right side) | Second drain terminal; used with Pin 2 in push-pull topology to double output power and suppress even-order harmonics |
Key Features
| Feature | Design Value |
|---|---|
| 65:1 VSWR ruggedness | Guaranteed survival under extreme load mismatch at full power - eliminates need for circulators in plasma/laser exciters |
| Unmatched broadband design | Enables 1.8–600 MHz operation without internal matching components, simplifying amplifier layout and tuning |
| Push-pull configurable | Two independent gate/drain pairs support parallel or balanced topologies, improving power combining and harmonic suppression |
| Enhanced ESD protection | HBM Class 2 rating (≥2 kV) and extended negative VGS range (–6 V) improve robustness during handling and Class C switching |
| Characterized large-signal Z-parameters | Series-equivalent source/load impedances provided (e.g., Zsource = 1.78 + j5.45 Ω @ 230 MHz) for accurate matching network synthesis |
Applications
| Laser Exciter Systems | Broadcast Transmitters |
|---|---|
|
Use Scenario: High-power RF energy delivery to CO₂ or excimer laser plasma tubes requiring stable 230 MHz drive under variable load conditions. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating in CW mode with active VSWR protection. Use Value: 600 W CW output and 65:1 VSWR tolerance eliminate need for external protection circuits, reducing system footprint and failure points. |
Use Scenario: UHF digital TV (ATSC/DVB-T) transmitter final amplifier operating at 470–862 MHz with stringent linearity and efficiency demands. IC Role / Device Role / Timing Role: High-efficiency broadband RF PA core in Doherty or push-pull architecture. Use Value: 75.2% drain efficiency at 600 W CW reduces cooling load; unmatched design supports wideband channel agility without retuning. |
| Aerospace Communication Links | Industrial Plasma Generators |
|
Use Scenario: High-reliability HF/VHF airborne communication amplifier subject to vibration, temperature cycling, and antenna detuning. IC Role / Device Role / Timing Role: Ruggedized RF power stage in MIL-STD-810G compliant transceivers. Use Value: MTTF >10⁷ hours at 85°C junction temperature and proven 65:1 VSWR resilience ensure mission-critical uptime. |
Use Scenario: RF-powered plasma chamber for semiconductor etching or surface treatment, where reflected power varies dynamically. IC Role / Device Role / Timing Role: Primary RF generator amplifier operating at 13.56 MHz or 27.12 MHz with real-time load adaptation. Use Value: Ability to sustain 600 W output into 65:1 VSWR at 230 MHz translates to reliable operation at lower frequencies with margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP6300HR5 | Higher POUT (630 W CW), same 50 V operation, but higher Ciss (390 pF vs. 342 pF) and slightly lower Gps (24.5 dB) | Better suited for ultra-high-power broadcast where efficiency margin outweighs bandwidth trade-off | Select when >600 W CW is required and frequency range remains ≤230 MHz |
| CGHV1J006S | Gallium nitride (GaN) process; 600 W CW at 50 V, but higher fmax (>1 GHz), lower RθJC (0.09 °C/W), and no VSWR rating published | Preferred for wideband military comms above 500 MHz, but requires GaN-specific gate bias and thermal management | Select for >500 MHz operation or when GaN's higher efficiency at high frequency justifies redesign effort |
Compared with MRFE6VP5600HSR5, MRFE6VP6300HR5 offers higher output power at the cost of reduced small-signal gain and wider bandwidth limitation, while CGHV1J006S delivers superior high-frequency performance and thermal efficiency but lacks documented VSWR ruggedness - making MRFE6VP5600HSR5 the preferred choice for industrial and broadcast applications demanding proven mismatch resilience.
Availability
MRFE6VP5600HSR5 is available at Aetrix Electronics and suitable for broadcast transmitters, industrial plasma generators, aerospace communication links, and laser exciter systems requiring stable component supply across long production lifecycles.
Supply support for MRFE6VP5600HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, automotive, and secure connectivity solutions, with deep heritage in RF power from its Freescale acquisition.
The MRFE6VP5600HSR5 belongs to NXP's high-ruggedness LDMOS RF power transistor family, engineered specifically for industrial, broadcast, and aerospace amplifiers demanding reliability under extreme VSWR and high average power.
FAQ
What is the maximum continuous drain voltage rating for MRFE6VP5600HSR5?
The MRFE6VP5600HSR5 has a maximum drain-source voltage (VDSS) rating of +130 Vdc and –0.5 Vdc. This rating allows safe operation up to 50 Vdc drain supply with substantial headroom for transient voltage spikes encountered in RF amplifier switching and mismatch events. The device is qualified for continuous operation at 50 Vdc, as confirmed in its functional test conditions and thermal derating curves.
Does MRFE6VP5600HSR5 support push-pull amplifier configurations?
Yes, MRFE6VP5600HSR5 is explicitly designed for push-pull operation, with two fully independent gate (Pins 1 and 4) and drain (Pins 2 and 5) terminals. Its symmetrical pinout and matched device characteristics enable balanced drive and output combining, reducing even-order harmonics and improving power-added efficiency in high-fidelity RF amplifiers.
What is the thermal resistance junction-to-case for MRFE6VP5600HSR5 under CW operation?
The MRFE6VP5600HSR5 exhibits a junction-to-case thermal resistance (RθJC) of 0.12 °C/W under continuous wave (CW) conditions at 600 W output, 60°C case temperature, and 100 mA quiescent current. This value is measured per AN1955 methodology and enables precise cold plate sizing for industrial and broadcast amplifier thermal management.
Is MRFE6VP5600HSR5 RoHS compliant and what packaging option does the 'R5' suffix indicate?
Yes, MRFE6VP5600HSR5 is RoHS compliant. The 'R5' suffix denotes the tape-and-reel packaging option containing 50 units on a 56 mm wide carrier tape wound on a 13-inch reel - distinct from the 'R6' variant (150 units). This R5 configuration was offered for two years post-launch and remains supported for legacy program continuity.
What is the typical gate threshold voltage of MRFE6VP5600HSR5 and how does it impact bias design?
The MRFE6VP5600HSR5 has a typical gate threshold voltage (VGS(th)) of 2.2 Vdc, with a min/max range of 1.7–2.7 Vdc. This relatively low and tightly distributed threshold enables stable Class AB biasing using simple resistive-divider or active current-source networks, minimizing gate drive complexity while ensuring consistent turn-on behavior across temperature and unit-to-unit variation.
MRFE6VP5600HSR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230-4S
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 1.8MHz ~ 600MHz
- Gain:
- 25dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 600W
- Voltage - Rated:
- 130 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4S
MRFE6VP5600HSR5 FAQ
1.How can I place an order for MRFE6VP5600HSR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFE6VP5600HSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFE6VP5600HSR5 reliable?
The price and inventory of MRFE6VP5600HSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFE6VP5600HSR5 is usually 5 days.
3.What payment methods are accepted for MRFE6VP5600HSR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFE6VP5600HSR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFE6VP5600HSR5?
MRFE6VP5600HSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFE6VP5600HSR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFE6VP5600HSR5?
For technical support, including MRFE6VP5600HSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFE6VP5600HSR5 requirements.
6.How does Aetrix verify that MRFE6VP5600HSR5 is sourced from the original manufacturer or authorized distributors?
All MRFE6VP5600HSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFE6VP5600HSR5 meets industry standards.
7.What is the process for return or replacement of MRFE6VP5600HSR5?
All MRFE6VP5600HSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRFE6VP5600HSR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFE6VP5600HSR5 part is unused and in its original packaging.
Return procedure for MRFE6VP5600HSR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRFE6VP5600HSR5 Tags
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