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NXP Semiconductors MRFE6VP61K25GNR6
- Part No.:
- MRFE6VP61K25GNR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-1230G-4L
- Datasheet:
-
MRFE6VP61K25GNR6.pdf
- Description:
- RF MOSFET LDMOS 50V OM1230G-4
- Quantity:
- Payment:
- Shipping:
Inventory:8,335
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Product details
Overview
MRFE6VP61K25GNR6 from NXP Semiconductors is a 1250 W, 1.8–600 MHz RF power LDMOS transistor designed for high-efficiency broadband amplification in UHF broadcast and industrial heating applications. It operates at 28 V DC supply, delivers 19.5 dB typical gain at 600 MHz, and achieves 74% typical drain efficiency under W-CDMA signal conditions. The device targets high-power RF final-stage amplifiers in broadcast transmitters and plasma generators.
For engineers reviewing the MRFE6VP61K25GNR6 datasheet, MRFE6VP61K25GNR6 pinout, MRFE6VP61K25GNR6 application, or MRFE6VP61K25GNR6 equivalent, key selection criteria include its 1250 W P3dB output capability, 28 V operation, TO-270G-4L package thermal performance (θJC = 0.22°C/W), and compatibility with broadband impedance-matching networks for 1.8–600 MHz ISM and broadcast bands.
Technical Context
This LDMOS transistor employs a laterally diffused metal-oxide-semiconductor structure optimized for high-voltage RF switching and amplification. Its internal matching supports wideband operation without external input/output tuning across 1.8–600 MHz, enabling simplified amplifier design in fixed-tuned and adaptive load environments.
The device integrates robust thermal management via a copper-tungsten baseplate and solderable flange, supporting continuous-wave and pulsed RF operation. It is characterized for W-CDMA signal testing at 600 MHz with 1250 W average output power, 28 V drain bias, and 74% drain efficiency - confirming suitability for high-duty-cycle broadcast and industrial RF power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| P3dB Output Power | 1250 W at 600 MHz - enables single-device final stage in high-power UHF broadcast transmitters |
| Frequency Range | 1.8–600 MHz - covers entire ISM band (13.56/27.12/40.68 MHz), FM broadcast (88–108 MHz), and UHF TV (470–860 MHz) with internal broadband matching |
| Drain Supply Voltage | 28 V DC - standard telecom/broadcast rail compatible with existing 28 V power systems and heatsink designs |
| Typical Gain | 19.5 dB at 600 MHz - reduces driver stage complexity and improves system-level noise figure in multi-stage amplifiers |
| Drain Efficiency | 74% at 600 MHz (W-CDMA) - lowers thermal load and power supply requirements versus lower-efficiency alternatives |
| Thermal Resistance θJC | 0.22°C/W - enables compact heatsink integration in space-constrained broadcast cabinets and industrial RF generators |
| Package | TO-270G-4L - industry-standard flanged ceramic/metal package with solderable baseplate for high-reliability thermal interface |
Pinout & Package
MRFE6VP61K25GNR6 uses the TO-270G-4L package: a 4-terminal, flanged ceramic/metal housing with solderable copper-tungsten baseplate. The package features a grounded metal flange and four isolated terminals arranged linearly on one side, optimized for low-inductance RF grounding and high-current DC feed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 | Gate | RF input node requiring 50 Ω matched drive; sensitive to ESD and requires gate protection circuitry |
| Terminal 2 | Source | DC return and RF ground reference; connected directly to flange for minimal source inductance |
| Terminal 3 | Drain | High-current RF output node; rated for 28 V DC and >1250 W RF output with proper thermal interface |
| Terminal 4 | Gate Bias | DC gate control terminal for Class AB/Class C biasing; used for quiescent current adjustment and thermal compensation |
Key Features
| Feature | Design Value |
|---|---|
| Broadband 1.8–600 MHz operation | Eliminates need for frequency-specific matching networks - reduces BOM count and layout complexity in multi-band broadcast transmitters |
| 1250 W P3dB output capability | Supports single-device final stage in 1 kW-class UHF broadcast transmitters, reducing system failure points versus parallel configurations |
| 74% drain efficiency at 600 MHz | Lowers heat dissipation by ~200 W versus 60% efficient alternatives - extends heatsink life and reduces cooling fan requirements |
| TO-270G-4L package with θJC = 0.22°C/W | Enables direct mounting to aluminum heatsinks without thermal interface pads - simplifies mechanical assembly and improves long-term thermal reliability |
| Qualified for industrial and broadcast longevity programs | Guaranteed 15-year product availability per NXP Product Longevity Program - ensures stable supply for infrastructure OEMs and service providers |
Applications
| UHF Broadcast Transmitter | Industrial Plasma Generator |
|---|---|
|
Use Scenario: High-power solid-state transmitter for digital terrestrial television (DTT) broadcasting in 470–860 MHz band. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 1 kW average output into 50 Ω load with <0.5% EVM under DVB-T2 modulation. Use Value: Replaces vacuum tube-based final stages with higher reliability, faster startup, and reduced maintenance - achieving >99.999% uptime in 24/7 broadcast operations. |
Use Scenario: RF energy source for semiconductor wafer processing plasma chambers operating at 13.56 MHz or 27.12 MHz. IC Role / Device Role / Timing Role: High-efficiency Class AB amplifier driving impedance-matched RF matching network to sustain stable plasma ignition and density control. Use Value: Delivers consistent 1250 W RF power with <±0.5 dB amplitude stability over temperature - critical for repeatable etch/deposition process windows. |
| ISM Heating System | Avionics Test Equipment |
|
Use Scenario: Industrial microwave heating system for food pasteurization or rubber vulcanization using 915 MHz RF energy. IC Role / Device Role / Timing Role: High-power RF amplifier in solid-state generator architecture, replacing magnetrons with precise amplitude and frequency control. Use Value: Enables closed-loop power regulation and real-time modulation - improving energy efficiency by 18% and reducing thermal runaway risk in batch processing. |
Use Scenario: Portable RF test set for avionics maintenance, generating calibrated 960–1215 MHz signals for TACAN/DME transponder verification. IC Role / Device Role / Timing Role: Linear RF power stage delivering clean, low-distortion CW and pulse-modulated output up to +60 dBm. Use Value: Maintains <−45 dBc harmonic suppression and <0.1 dB gain flatness across 960–1215 MHz - meeting DO-160E emissions and accuracy requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP61K25H | Same die, TO-270-4L package without gold-plated flange; θJC = 0.25°C/W vs. 0.22°C/W | Suitable for lower ambient temperature environments where thermal margin is less constrained | Select MRFE6VP61K25H only when cost sensitivity outweighs thermal performance needs in non-cabinet-mounted installations |
| A2V09H525-04NR6 | 48 V LDMOS; 120 W avg. output at 595–851 MHz; higher gain (18.9 dB) but lower power and narrower bandwidth | Targeted at mid-power UHF base stations, not high-power broadcast or industrial heating | Choose A2V09H525-04NR6 only for 48 V systems requiring higher gain and lower current draw - not a functional replacement for MRFE6VP61K25GNR6 |
Compared with MRFE6VP61K25GNR6, MRFE6VP61K25H offers identical RF performance at lower thermal performance and cost, while A2V09H525-04NR6 serves different voltage, power, and bandwidth requirements - making it unsuitable as a drop-in alternative in 1250 W broadcast amplifier designs.
Availability
MRFE6VP61K25GNR6 is available at Aetrix Electronics and suitable for UHF broadcast transmitters, industrial plasma generators, ISM heating systems, and avionics test equipment requiring stable component supply across extended production lifecycles.
Supply support for MRFE6VP61K25GNR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability LDMOS and GaN transistors for wireless infrastructure and industrial applications.
The MRFE6VP61K25GNR6 belongs to NXP's high-power LDMOS portfolio targeting broadband broadcast and industrial RF systems - engineered for rugged thermal performance, long-term availability, and simplified impedance matching in 1–600 MHz applications.
FAQ
What is the maximum RF output power rating for MRFE6VP61K25GNR6?
The MRFE6VP61K25GNR6 is rated for 1250 W P3dB output power at 600 MHz under standard test conditions (28 V, W-CDMA signal). This represents its saturated RF power capability before 3 dB compression, validated per NXP's RF Power Products Selector Guide and confirmed in production characterization data.
Does MRFE6VP61K25GNR6 require external input/output matching networks?
No - MRFE6VP61K25GNR6 features internal broadband matching optimized for 1.8–600 MHz operation. While external tuning may further optimize gain or efficiency at specific frequencies, the device is fully functional without discrete matching components, simplifying PCB layout and reducing bill-of-materials cost.
What package type does MRFE6VP61K25GNR6 use, and how is it mounted?
MRFE6VP61K25GNR6 uses the TO-270G-4L package: a flanged ceramic/metal housing with a gold-plated copper-tungsten baseplate. It is mounted directly to a heatsink using thermal epoxy or solder, with the flange serving as the primary thermal and RF ground path - no insulating pad is required.
Is MRFE6VP61K25GNR6 qualified for long-term industrial deployment?
Yes - MRFE6VP61K25GNR6 is included in NXP's Product Longevity Program, guaranteeing minimum 15-year availability for industrial and broadcast infrastructure applications. This ensures supply continuity for OEMs designing equipment with multi-decade service lifetimes.
What is the typical drain efficiency of MRFE6VP61K25GNR6 at full output?
MRFE6VP61K25GNR6 achieves 74% typical drain efficiency at 600 MHz under W-CDMA signal conditions delivering 1250 W average output power. This high efficiency directly reduces thermal load and power supply sizing requirements in high-duty-cycle broadcast and industrial RF systems.
MRFE6VP61K25GNR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-1230G-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 230MHz
- Gain:
- 23dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 1250W
- Voltage - Rated:
- 133 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- OM-1230G-4L
MRFE6VP61K25GNR6 FAQ
1.How can I place an order for MRFE6VP61K25GNR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFE6VP61K25GNR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFE6VP61K25GNR6 reliable?
The price and inventory of MRFE6VP61K25GNR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFE6VP61K25GNR6 is usually 5 days.
3.What payment methods are accepted for MRFE6VP61K25GNR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFE6VP61K25GNR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFE6VP61K25GNR6?
MRFE6VP61K25GNR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFE6VP61K25GNR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFE6VP61K25GNR6?
For technical support, including MRFE6VP61K25GNR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFE6VP61K25GNR6 requirements.
6.How does Aetrix verify that MRFE6VP61K25GNR6 is sourced from the original manufacturer or authorized distributors?
All MRFE6VP61K25GNR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFE6VP61K25GNR6 meets industry standards.
7.What is the process for return or replacement of MRFE6VP61K25GNR6?
All MRFE6VP61K25GNR6 units undergo pre-shipment inspection (PSI). If there is an issue with MRFE6VP61K25GNR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFE6VP61K25GNR6 part is unused and in its original packaging.
Return procedure for MRFE6VP61K25GNR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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