NXP Semiconductors MRFE6VP61K25HSR5

Overview

MRFE6VP61K25HSR5 from NXP Semiconductors (formerly Freescale) is a high-ruggedness, 50 V, 1250 W CW RF power LDMOS transistor optimized for broadband operation from 1.8 to 600 MHz. It delivers 27 dB gain and 84% drain efficiency at 81.36 MHz CW, supports unmatched input/output matching, and is qualified for industrial plasma exciters, FM broadcast transmitters, and land mobile radio amplifiers.

For engineers reviewing the MRFE6VP61K25HSR5 datasheet, MRFE6VP61K25HSR5 pinout, MRFE6VP61K25HSR5 application, or MRFE6VP61K25HSR5 equivalent, key selection criteria include its 225 °C junction temperature rating, >65:1 load mismatch tolerance at 230 MHz, dual-gate/dual-drain push-pull capability, and NI-1230S-4S gull-wing surface-mount package with source-connected backside thermal path.

Technical Context

This device implements a lateral N-channel enhancement-mode LDMOS structure with integrated ESD protection enabling ±6 V gate-source voltage range. Its series-equivalent large-signal impedance model is characterized across 1.8–600 MHz, supporting both single-ended and balanced push-pull configurations without external balun requirements.

Thermal design relies on low 0.15 °C/W junction-to-case resistance under 1250 W CW operation at TC = 63 °C, with pulse-mode thermal impedance reduced to 0.03 °C/W. Gate threshold voltage is tightly specified at 1.7–2.7 V, and forward transconductance is 28.0 S - enabling stable Class AB/C biasing for linear and saturated RF power stages.

Key Specifications

Pinout & Package

The MRFE6VP61K25HSR5 uses the NI-1230S-4S surface-mount package: a thermally enhanced gull-wing leadframe with an electrically connected copper backside serving as the common source terminal. Dimensions are 22.2 mm × 19.0 mm × 4.5 mm (L × W × H), with 4 gull-wing leads and a 0.8 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFE6VP61K25HR5 and MRFE6VP61K25GSR5, the MRFE6VP61K25HSR5 offers identical RF performance and ruggedness while enabling fully automated SMT placement and reflow soldering - reducing assembly cost and improving thermal interface consistency in high-volume broadcast amplifier production.

Availability

MRFE6VP61K25HSR5 is available at Aetrix Electronics and suitable for FM broadcast transmitters, industrial plasma exciters, and land mobile radio base stations requiring stable component supply and long-term obsolescence management.

Supply support for MRFE6VP61K25HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in silicon and GaN RF transistors for mission-critical infrastructure.

The MRFE6VP61K25HSR5 belongs to NXP's MRFE6VP6xK25 family of wideband LDMOS transistors, engineered specifically for high-efficiency, high-ruggedness RF power amplification in broadcast, industrial, and aerospace systems operating up to 600 MHz.

FAQ

What is the maximum continuous drain current rating for MRFE6VP61K25HSR5?

The MRFE6VP61K25HSR5 does not specify a maximum continuous drain current (ID) rating. Instead, it defines safe operating limits via total device dissipation (1333 W at TC = 25 °C), junction temperature (225 °C), and thermal resistance (0.15 °C/W). Actual ID depends on operating voltage, duty cycle, and heatsink performance - for example, at 50 V and 1250 W CW, average ID is approximately 25 A, but peak pulse current exceeds 100 A.

Does MRFE6VP61K25HSR5 require external gate protection diodes?

No, the MRFE6VP61K25HSR5 integrates ESD protection rated to 3500 V HBM, 250 V MM, and 4000 V CDM. External gate protection diodes are not required for normal operation or ESD handling. However, transient voltage suppressors may still be recommended in high-noise RF environments where gate drive lines couple strong RF energy.

Can MRFE6VP61K25HSR5 be operated at 28 V for lower-power applications?

Yes, the MRFE6VP61K25HSR5 is characterized from 30 V to 50 V, and functional testing confirms stable operation at 28 V. At 28 V, typical CW output drops to ~600 W with ~70% efficiency at 230 MHz. This allows flexible use in multi-voltage amplifier architectures, though full 1250 W performance requires ≥30 V supply per datasheet specifications.

What is the gate-source leakage current specification for MRFE6VP61K25HSR5?

The MRFE6VP61K25HSR5 specifies gate-source leakage current (IGSS) as ≤1 µA at VGS = 5 Vdc and VDS = 0 Vdc, measured at TA = 25 °C. This low leakage supports stable quiescent current control and minimizes bias network loading in high-impedance gate drive circuits used in Class AB amplifiers.

Is the backside of the MRFE6VP61K25HSR5 package electrically active?

Yes, the copper backside of the MRFE6VP61K25HSR5 NI-1230S-4S package is the common source terminal for both internal transistor cells. It must be electrically and thermally connected to the system ground plane and heatsink. Isolating the backside violates the device's electrical and thermal specifications and will cause immediate failure.