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NXP Semiconductors MRFE6VP61K25HSR6
- Part No.:
- MRFE6VP61K25HSR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230S
- Datasheet:
-
MRFE6VP61K25HSR6.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:5,105
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Product details
Overview
MRFE6VP61K25HSR6 from NXP Semiconductors (formerly Freescale) is a high-ruggedness, 50 V, 1250 W CW RF power LDMOS transistor optimized for broadband operation from 1.8 to 600 MHz. It delivers 24.0 dB power gain and 74.0% drain efficiency at 230 MHz under pulsed conditions (1250 W peak), and supports unmatched input/output designs for industrial plasma exciters, FM broadcast transmitters, and land mobile radio amplifiers.
For engineers reviewing the MRFE6VP61K25HSR6 datasheet, MRFE6VP61K25HSR6 pinout, MRFE6VP61K25HSR6 application, or MRFE6VP61K25HSR6 equivalent, key selection criteria include its 225 °C maximum junction temperature, >65:1 load mismatch tolerance at 230 MHz, 0.15 °C/W thermal resistance (CW), and dual-gate/dual-drain configuration enabling push-pull or single-ended amplifier topologies.
Technical Context
This device is a laterally diffused metal-oxide-semiconductor (LDMOS) transistor with integrated ESD protection, qualified for up to +50 VDD operation and characterized from 30 V to 50 V. Its gate threshold voltage is 2.2 V typical (1.7–2.7 V min/max), and it features a forward transconductance of 28.0 S at VDS = 10 Vdc and ID = 30 A.
The MRFE6VP61K25HSR6 operates in enhancement-mode with zero-gate-voltage drain leakage ≤10 µAdc at 50 VDS, and exhibits series-equivalent large-signal impedance parameters optimized for 230 MHz, 87.5–108 MHz, and 144–148 MHz reference circuits - supporting both linear and Class C biasing schemes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–600 MHz - enables single-device coverage across HF/VHF/UHF bands without retuning. |
| Output Power (CW) | 1250 W @ 230 MHz, 50 V - sufficient for high-power FM broadcast and industrial RF heating stages. |
| Power Gain | 24.0 dB @ 230 MHz pulse - provides high drive efficiency with minimal preceding stage complexity. |
| Drain Efficiency | 74.6% @ 1250 W CW - reduces thermal load and DC power supply sizing requirements. |
| Junction Temperature | 225 °C max - allows operation under sustained high-power, high-VSWR conditions common in broadcast. |
| Load Mismatch Tolerance | >65:1 VSWR @ 230 MHz - ensures survival during antenna detuning or fault events without degradation. |
| Thermal Resistance (RθJC) | 0.15 °C/W @ 1250 W CW - mandates high-performance heatsinking but enables compact thermal design. |
Pinout & Package
The MRFE6VP61K25HSR6 is housed in the NI-1230H-4S package - a ceramic/metal flanged package with isolated source (backside), rated for high-power RF operation. The case is electrically connected to the source terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate A) | Input control terminal for first transistor cell | Enables balanced push-pull configuration; requires matched gate drive network for symmetry. |
| 2 (Gate B) | Input control terminal for second transistor cell | Paired with Pin 1 to form differential gate interface; critical for IMD suppression in linear amplifiers. |
| 3 (Drain A) | High-power RF output node for first cell | Carries half the total RF current in push-pull; must be impedance-matched to 2.12 + j2.68 Ω at 230 MHz. |
| 4 (Drain B) | High-power RF output node for second cell | Complements Pin 3; combined drains deliver full 1250 W output when paralleled or push-pulled. |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched input/output design | Eliminates need for internal matching networks - simplifies PCB layout and enables frequency-flexible amplifier design across 1.8–600 MHz. |
| Push-pull or single-ended operation | Supports both configurations via dual-gate/dual-drain topology - ideal for high-efficiency Class AB/B or robust Class C final stages. |
| Integrated ESD protection | HBM Class 2 (3500 V), CDM Class IV (4000 V) - enhances manufacturing yield and field reliability without external protection circuitry. |
| Characterized large-signal impedances | Provides Zsource/Zload data for 230 MHz, 87.5–108 MHz, and 144–148 MHz - accelerates matching network synthesis and simulation convergence. |
| Tape-and-reel packaging (R6) | 150 units per 56 mm wide, 13-inch reel - compatible with automated SMT placement for high-volume RF power module assembly. |
Applications
| FM Broadcast Transmitter | Industrial Plasma Exciter |
|---|---|
Use Scenario: Final RF power stage in 87.5–108 MHz analog/digital FM broadcast transmitters delivering ≥1 kW CW output. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power amplifier operating in Class AB with 200 mA quiescent bias. Use Value: Delivers 1100 W CW at 108 MHz with 27 dB gain and 81% efficiency - meeting spectral mask and adjacent-channel power requirements. | Use Scenario: RF energy source in semiconductor plasma etching and deposition systems requiring stable 2–30 MHz power delivery. IC Role / Device Role / Timing Role: Robust, unmatched RF power switch driving resonant tank circuits under variable load conditions. Use Value: Withstands >65:1 VSWR at 230 MHz and operates up to 225 °C junction - ensuring uptime during plasma ignition and process transients. |
| Land Mobile Radio Base Station | Aerospace HF Communications |
Use Scenario: Final amplifier in 144–148 MHz P25/TETRA base station transceivers requiring high PEP output and low IMD. IC Role / Device Role / Timing Role: Linear RF power stage biased at 2500 mA IDQ for two-tone intermodulation suppression. Use Value: Achieves –70 dBc third-order IMD at 1100 W PEP - compliant with APCO-25 spectral purity standards. | Use Scenario: High-reliability HF amplifier in airborne communication systems operating from 1.8–30 MHz. IC Role / Device Role / Timing Role: Broadband power amplifier supporting multi-band HF waveforms with rapid frequency agility. Use Value: Maintains ≥22.9 dB gain and 74.6% efficiency across 1.8–30 MHz - enabling compact, air-cooled transmitter designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP61K25HSR5 | Same die, 50-unit tape-and-reel (R5 suffix) vs. 150-unit R6; identical electrical specs and thermal performance. | No functional difference; selected for lower-volume prototyping or smaller lot procurement. | Direct replacement where reel quantity aligns with production batch size; no design or layout changes required. |
| MRFE6VP61K25HR6 | Same RF die and package, but uses NI-1230H-4S mounting variant without gull-wing leads - identical pinout and thermal metrics. | Identical use cases; HR6 is legacy tape-and-reel version superseded by HSR6 per PCN15551. | Valid alternative if HR6 inventory remains; verify latest PCN compliance before new design-in. |
Compared with MRFE6VP61K25HSR5 and MRFE6VP61K25HR6, the MRFE6VP61K25HSR6 offers identical RF performance and ruggedness but optimizes for high-volume automated assembly via its 150-unit reel format and updated packaging specification per PCN15551.
Availability
MRFE6VP61K25HSR6 is available at Aetrix Electronics and suitable for FM broadcast transmitters, industrial plasma exciters, and land mobile radio base stations requiring stable component supply and long-term manufacturability.
Supply support for MRFE6VP61K25HSR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in automotive, industrial, and communications semiconductors.
The MRFE6VP61K25HSR6 belongs to NXP's MRFE6VP6xK25 family of wideband LDMOS transistors, engineered specifically for high-ruggedness, high-efficiency RF power amplification in demanding industrial and broadcast environments.
FAQ
What is the maximum continuous drain-source voltage rating for MRFE6VP61K25HSR6?
The MRFE6VP61K25HSR6 has a maximum drain-source voltage (VDSS) rating of +133 Vdc, with a minimum of –0.5 Vdc. This rating is validated per the device's maximum ratings table and supports safe operation under transient overvoltage conditions common in RF amplifier switching and mismatch events. The MRFE6VP61K25HSR6 must not be operated beyond this limit to ensure long-term reliability.
Does MRFE6VP61K25HSR6 support push-pull amplifier configurations?
Yes, the MRFE6VP61K25HSR6 is explicitly designed for both single-ended and push-pull configurations, as confirmed in its Freescale technical data. Its dual-gate (Pins 1 & 2) and dual-drain (Pins 3 & 4) structure enables balanced drive and symmetrical RF output combining. The MRFE6VP61K25HSR6 reference circuits include verified push-pull layouts at 230 MHz and 144–148 MHz.
What is the thermal resistance (RθJC) of MRFE6VP61K25HSR6 under CW operation?
The MRFE6VP61K25HSR6 has a thermal resistance (RθJC) of 0.15 °C/W under CW conditions at TC = 63 °C, 1250 W output, IDQ = 100 mA, and 230 MHz. This value is measured per AN1955 methodology and defines the junction-to-case temperature gradient under full-rated continuous power - critical for heatsink sizing and thermal interface material selection in the MRFE6VP61K25HSR6 application.
Is MRFE6VP61K25HSR6 suitable for Class C amplifier operation?
Yes, the MRFE6VP61K25HSR6 supports Class C operation due to its extended negative gate-source voltage range (–6.0 Vdc) and integrated ESD protection, which improve ruggedness during hard-switching. Its characterization includes pulsed performance data and load mismatch testing - confirming suitability for high-efficiency, non-linear RF power stages where linearity is secondary to efficiency and power density, as specified for the MRFE6VP61K25HSR6.
What package type does MRFE6VP61K25HSR6 use, and is the source terminal accessible?
The MRFE6VP61K25HSR6 uses the NI-1230H-4S ceramic/metal flanged package. The source terminal is not brought out to a lead; instead, the entire backside metal surface of the package serves as the common source connection - requiring direct thermal and electrical mounting to a grounded, conductive heatsink. This construction is confirmed in the device's mechanical drawings and pinout diagram for the MRFE6VP61K25HSR6.
MRFE6VP61K25HSR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 230MHz
- Gain:
- 24dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 1250W
- Voltage - Rated:
- 133 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230S
MRFE6VP61K25HSR6 FAQ
1.How can I place an order for MRFE6VP61K25HSR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFE6VP61K25HSR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFE6VP61K25HSR6 reliable?
The price and inventory of MRFE6VP61K25HSR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFE6VP61K25HSR6 is usually 5 days.
3.What payment methods are accepted for MRFE6VP61K25HSR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFE6VP61K25HSR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFE6VP61K25HSR6?
MRFE6VP61K25HSR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFE6VP61K25HSR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFE6VP61K25HSR6?
For technical support, including MRFE6VP61K25HSR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFE6VP61K25HSR6 requirements.
6.How does Aetrix verify that MRFE6VP61K25HSR6 is sourced from the original manufacturer or authorized distributors?
All MRFE6VP61K25HSR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFE6VP61K25HSR6 meets industry standards.
7.What is the process for return or replacement of MRFE6VP61K25HSR6?
All MRFE6VP61K25HSR6 units undergo pre-shipment inspection (PSI). If there is an issue with MRFE6VP61K25HSR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFE6VP61K25HSR6 part is unused and in its original packaging.
Return procedure for MRFE6VP61K25HSR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRFE6VP61K25HSR6 Tags
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SAV-551+
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