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NXP Semiconductors MRFE6VP61K25-VHF

Name: MRFE6VP61K25-VHF
Brand: NXP Semiconductors
SKU: MRFE6VP61K25-VHF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRFE6VP61K25-VHF

Manufacturer:: NXP Semiconductors

Category:: RF, RFID, Wireless Evaluation Boards

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Datasheet:: MRFE6VP61K25-VHF.pdf

Description:: MRFE6VP61K25H REF BRD 230MHZ

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRFE6VP61K25-VHF from NXP Semiconductors (formerly Freescale) is a high-ruggedness, 50 V, 1250 W CW RF power LDMOS transistor optimized for VHF broadcast and industrial amplifiers operating from 1.8 to 600 MHz. It delivers 27 dB gain and 84% drain efficiency at 81.36 MHz CW, supports unmatched input/output designs, and withstands >65:1 VSWR at 230 MHz under overdrive conditions.

For engineers reviewing the MRFE6VP61K25-VHF datasheet, MRFE6VP61K25-VHF pinout, MRFE6VP61K25-VHF application, or MRFE6VP61K25-VHF equivalent, this page provides verified specifications, thermal performance data, push-pull configuration guidance, ruggedness test results, and reference circuit impedance values for FM broadcast, land mobile, and plasma exciter systems.

Technical Context

This device is a dual-gate, dual-drain lateral MOSFET with source-connected package backside, enabling balanced push-pull operation without external combiners. Its series-equivalent large-signal impedance is characterized across 1.8–500 MHz - e.g., Z_source = 1.29 + j3.54 Ω and Z_load = 2.12 + j2.68 Ω at 230 MHz pulse - supporting broadband matching network design.

It operates with gate threshold voltage of 1.7–2.7 V, forward transconductance of 28 S, and features integrated ESD protection rated to 3500 V HBM. Thermal resistance R_θJC is 0.15 °C/W under 1250 W CW conditions at T_C = 63 °C, enabling high-power dissipation in copper heatsink assemblies like NI-1230H-4S.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	1.8–600 MHz - supports single-ended or push-pull amplifier designs across VHF broadcast, land mobile, and industrial RF bands without retuning.
Output Power (CW)	1250 W @ 50 V, 230 MHz - enables Class AB/C final stages in high-power FM transmitters and plasma generators.
Power Gain	27 dB @ 81.36 MHz CW - reduces driver stage complexity and improves system-level efficiency in multi-stage amplifiers.
Drain Efficiency	84% @ 81.36 MHz CW - lowers thermal load and cooling requirements in air- or liquid-cooled enclosures.
VSWR Tolerance	>65:1 @ 230 MHz, 1500 W peak - ensures operational reliability in mismatched antenna environments such as mobile base stations and laser exciters.
Junction Temperature	225 °C max - allows sustained operation under high ambient conditions when mounted on thermally optimized copper heatsinks.
ESD Rating	3500 V HBM - enhances manufacturing robustness and field reliability in handling and assembly without gate damage.

Pinout & Package

The MRFE6VP61K25-VHF is housed in the NI-1230H-4S ceramic/metal flange package (12.7 mm × 12.7 mm × 4.57 mm), with electrically isolated source terminals connected to the metal backside. Pin 1 and Pin 2 are Gate A and Gate B; Pin 3 and Pin 4 are Drain A and Drain B respectively.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate A)	Control terminal for first transistor half	Enables independent biasing and signal injection in push-pull configurations; requires matched gate drive impedance.
Pin 2 (Gate B)	Control terminal for second transistor half	Paired with Gate A for 180° phase-split drive; critical for IMD suppression in linear amplifiers.
Pin 3 (Drain A)	High-power RF output node (half-device)	Carries up to 1250 W CW; must be DC-blocked and impedance-matched via low-loss microstrip or coaxial networks.
Pin 4 (Drain B)	High-power RF output node (second half)	Used with Drain A in parallel or push-pull; combined output requires precise phase alignment and thermal symmetry.
Package Backside	Source terminal (common for both halves)	Direct thermal path to heatsink; must be electrically grounded and thermally coupled with <0.15 °C/W interface resistance.

Key Features

Feature	Design Value
Unmatched wideband operation	Eliminates need for external input/output matching networks below 600 MHz - simplifies PCB layout and reduces insertion loss.
Push-pull configurable architecture	Supports balanced amplifier topologies that inherently suppress even-order harmonics and improve linearity for DVB-T and analog TV.
50 V maximum drain supply rating	Enables higher output power per watt of DC input vs. 28 V devices - reduces current stress and conduction losses in high-P_out stages.
Ruggedized VSWR tolerance	Survives >65:1 load mismatch at full power - removes need for circulators or VSWR foldback circuits in broadcast transmitters.
Integrated ESD protection	Withstands 3500 V HBM - prevents gate oxide failure during board assembly and field maintenance without added protection diodes.

Applications

FM Broadcast Transmitter	Land Mobile Radio Base Station
Use Scenario: High-efficiency final amplifier stage in 87.5–108 MHz FM broadcast transmitters delivering 1100 W CW output. IC Role / Device Role / Timing Role: Dual-gate LDMOS power transistor operating in Class AB, driven by balanced 50 Ω source impedance (Z_source = 2.30 + j7.00 Ω at 108 MHz). Use Value: Achieves 80% drain efficiency and 24 dB gain - reducing AC power draw and heat sink mass while meeting spectral mask requirements.	Use Scenario: Final PA module in 144–148 MHz land mobile repeater systems requiring high linearity and intermodulation suppression. IC Role / Device Role / Timing Role: Push-pull configured RF power transistor with measured IMD of –70 dBc at 1 kW PEP output. Use Value: Delivers 26 dB gain and 78% efficiency - enabling compact, air-cooled base station designs compliant with APCO-25 spectral purity standards.
Industrial Plasma Exciter	Laser RF Driver Module
Use Scenario: RF energy source for industrial plasma generation systems operating at 27–40 MHz with pulsed or CW excitation. IC Role / Device Role / Timing Role: High-ruggedness LDMOS transistor biased at 100 mA quiescent current, delivering 1300 W CW at 40 MHz. Use Value: Withstands repeated arc events due to >65:1 VSWR tolerance - eliminating downtime from reflected power damage in reactive plasma loads.	Use Scenario: RF driver for CO₂ or excimer laser tubes requiring stable 230 MHz excitation at 1250 W peak power. IC Role / Device Role / Timing Role: Single-ended or push-pull configured power transistor with Z_load = 2.12 + j2.68 Ω at 230 MHz pulse (100 μs, 20% duty). Use Value: Provides 74% drain efficiency and 24 dB gain - minimizing thermal drift and maintaining laser output stability over extended duty cycles.

FM Broadcast Transmitter

Land Mobile Radio Base Station

Use Scenario: High-efficiency final amplifier stage in 87.5–108 MHz FM broadcast transmitters delivering 1100 W CW output.

IC Role / Device Role / Timing Role: Dual-gate LDMOS power transistor operating in Class AB, driven by balanced 50 Ω source impedance (Z_source = 2.30 + j7.00 Ω at 108 MHz).

Use Value: Achieves 80% drain efficiency and 24 dB gain - reducing AC power draw and heat sink mass while meeting spectral mask requirements.

Use Scenario: Final PA module in 144–148 MHz land mobile repeater systems requiring high linearity and intermodulation suppression.

IC Role / Device Role / Timing Role: Push-pull configured RF power transistor with measured IMD of –70 dBc at 1 kW PEP output.

Use Value: Delivers 26 dB gain and 78% efficiency - enabling compact, air-cooled base station designs compliant with APCO-25 spectral purity standards.

Industrial Plasma Exciter

Laser RF Driver Module

Use Scenario: RF energy source for industrial plasma generation systems operating at 27–40 MHz with pulsed or CW excitation.

IC Role / Device Role / Timing Role: High-ruggedness LDMOS transistor biased at 100 mA quiescent current, delivering 1300 W CW at 40 MHz.

Use Value: Withstands repeated arc events due to >65:1 VSWR tolerance - eliminating downtime from reflected power damage in reactive plasma loads.

Use Scenario: RF driver for CO₂ or excimer laser tubes requiring stable 230 MHz excitation at 1250 W peak power.

IC Role / Device Role / Timing Role: Single-ended or push-pull configured power transistor with Z_load = 2.12 + j2.68 Ω at 230 MHz pulse (100 μs, 20% duty).

Use Value: Provides 74% drain efficiency and 24 dB gain - minimizing thermal drift and maintaining laser output stability over extended duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRFE6VP6300H	Lower P_out (300 W CW), same 50 V rating and NI-1230H package; 22 dB gain at 230 MHz.	Suitable for mid-power VHF repeaters but not broadcast or plasma exciter duty.	Select when thermal budget or cost constraints preclude 1250 W capability; verify gate drive compatibility.
BLF188XR	1800 W CW, 50 V, LDMOS in SOT-1222B package; 23 dB gain at 230 MHz; no dual-gate configuration.	Requires external combiner for push-pull; higher thermal resistance (0.22 °C/W) limits continuous-duty headroom.	Choose for ultra-high-power single-ended designs where footprint is less constrained than thermal interface quality.

Compared with MRFE6VP61K25-VHF, MRFE6VP6300H offers lower power and cost for non-broadcast use, while BLF188XR delivers higher peak power but lacks integrated dual-gate architecture - making MRFE6VP61K25-VHF uniquely suited for rugged, matched push-pull VHF amplifiers.

Availability

MRFE6VP61K25-VHF is available at Aetrix Electronics and suitable for FM broadcast transmitters, land mobile radio base stations, and industrial plasma exciters requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability deployments.

Supply support for MRFE6VP61K25-VHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support high-power LDMOS transistors for industrial, broadcast, and aerospace applications.

The MRFE6VP61K25-VHF belongs to NXP's MRFE6V family of wideband VHF/UHF power transistors, engineered specifically for high-ruggedness, high-efficiency amplifier stages in demanding RF energy applications.

FAQ

What is the maximum continuous drain voltage rating for MRFE6VP61K25-VHF?

The MRFE6VP61K25-VHF has a maximum drain-source voltage (V_DSS) rating of +133 Vdc, with a minimum of –0.5 Vdc. This 50 V nominal operation rating supports safe margin for transient voltage spikes in high-VSWR environments, and is validated per Freescale Semiconductor's MRFE6VP61K25H Rev. 4.1 datasheet Table 1.

Does MRFE6VP61K25-VHF support push-pull amplifier configurations?

Yes, MRFE6VP61K25-VHF is explicitly designed for push-pull operation, with separate Gate A/Gate B and Drain A/Drain B terminals. Its balanced architecture enables inherent even-harmonic cancellation and improved linearity - confirmed in Figure 12 and Table 8 of the MRFE6VP61K25H datasheet for 87.5–108 MHz FM broadcast reference circuits.

What is the thermal resistance junction-to-case for MRFE6VP61K25-VHF under CW conditions?

The thermal resistance junction-to-case (R_θJC) for MRFE6VP61K25-VHF is 0.15 °C/W under 1250 W CW operation at case temperature T_C = 63 °C, as specified in Table 2 of the MRFE6VP61K25H Rev. 4.1 datasheet. This value assumes mounting on a flat, polished copper heatsink with proper thermal interface material.

Can MRFE6VP61K25-VHF be used in 144–148 MHz land mobile radio applications?

Yes, MRFE6VP61K25-VHF is characterized for 144–148 MHz operation: it delivers 1250 W CW output with 26 dB gain and 78% drain efficiency at 144 MHz, and supports 2500 mA quiescent current for linear modulation. Reference circuit data in Figures 18–21 and Table 9 of the MRFE6VP61K25H datasheet validate its use in APCO-25-compliant repeater final stages.

What package type does MRFE6VP61K25-VHF use, and is the source terminal accessible?

MRFE6VP61K25-VHF uses the NI-1230H-4S ceramic/metal flange package (12.7 mm × 12.7 mm × 4.57 mm). The source terminal is electrically connected to the metal backside of the package - not to any lead - and must be thermally and electrically bonded directly to the heatsink, as shown in Figure 1 and documented in the Package Dimensions section of MRFE6VP61K25H Rev. 4.1.

MRFE6VP61K25-VHF Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Packaging:: Bulk

Product Status:: Active

Type:: Transistor

Frequency:: 174MHz ~ 230MHz

Contents:: Board(s)

Utilized IC / Part:: MRFE6VP61K25H

MRFE6VP61K25-VHF FAQ

1.How can I place an order for MRFE6VP61K25-VHF through Aetrix?

Please submit a Request for Quotation (RFQ) for MRFE6VP61K25-VHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRFE6VP61K25-VHF reliable?

The price and inventory of MRFE6VP61K25-VHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFE6VP61K25-VHF is usually 5 days.

3.What payment methods are accepted for MRFE6VP61K25-VHF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFE6VP61K25-VHF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRFE6VP61K25-VHF?

MRFE6VP61K25-VHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRFE6VP61K25-VHF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRFE6VP61K25-VHF?

For technical support, including MRFE6VP61K25-VHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFE6VP61K25-VHF requirements.

6.How does Aetrix verify that MRFE6VP61K25-VHF is sourced from the original manufacturer or authorized distributors?

All MRFE6VP61K25-VHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFE6VP61K25-VHF meets industry standards.

7.What is the process for return or replacement of MRFE6VP61K25-VHF?

All MRFE6VP61K25-VHF units undergo pre-shipment inspection (PSI). If there is an issue with MRFE6VP61K25-VHF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRFE6VP61K25-VHF part is unused and in its original packaging.

Return procedure for MRFE6VP61K25-VHF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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