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NXP Semiconductors MRFE6VS25GN-960
- Part No.:
- MRFE6VS25GN-960
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRFE6VS25GN-960.pdf
- Description:
- MRFE6VS25GN REF BRD 1215MHZ 30W
- Quantity:
- Payment:
- Shipping:
Inventory:4,336
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Product details
Overview
MRFE6VS25GN-960 from NXP Semiconductors (formerly Freescale) is a 50 V LDMOS RF power transistor designed as a driver stage for DME, ADS-B, and transponder systems in commercial aerospace. It delivers 30 W pulsed output at 960–1215 MHz, with 16 dB small-signal gain, 45% drain efficiency, and operates with unmatched input/output impedance. It is specified for use with AFV121KH final-stage amplifiers in 500 W transponder lineups.
For engineers reviewing the MRFE6VS25GN-960 datasheet, MRFE6VS25GN-960 pinout, MRFE6VS25GN-960 application, or MRFE6VS25GN-960 equivalent, key selection criteria include its 960–1215 MHz wideband operation, NI-360H-2L ceramic package, 50 V DC supply compatibility, and role as a ruggedized driver in avionics pulse-amplifier chains requiring thermal stability and VSWR tolerance up to 65:1.
Technical Context
The MRFE6VS25GN-960 is an unmatched 50 V LDMOS transistor optimized for pulsed RF amplification in secondary surveillance radar subsystems. Its design supports 128 μs pulse width and 5–10% duty cycle operation, with bias conditions IDQ1 = 80 mA and IDQ2 = 150 mA for two-stage configurations.
It functions as a pre-driver in multi-stage amplifier architectures-e.g., paired with MRF6V12500H or AFV121KH final stages-and is characterized for operation across the full DME band (960–1215 MHz), not limited to narrowband 1090 MHz only. Its unmatched topology requires external matching networks for both input and output.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Operating Frequency | 960–1215 MHz - fully specified for DME band operation, not just 1090 MHz. |
| Output Power (Pulsed) | 30 W @ 1090 MHz, 10% duty cycle - enables reliable drive capability into high-VSWR final stages. |
| Small-Signal Gain | 16 dB - sufficient gain to drive 500 W final stages without intermediate amplification. |
| Drain Efficiency | 45% @ 1090 MHz - balances thermal load and power density in conduction-cooled avionics modules. |
| Supply Voltage | 50 V DC - standard for LDMOS-based avionics RF power chains; compatible with existing 50 V bias rails. |
| VSWR Tolerance | 65:1 - supports operation into highly mismatched loads typical of antenna switching and duplexer interfaces. |
| Package Type | NI-360H-2L - air-cavity ceramic package rated for high-reliability, high-power RF applications. |
Pinout & Package
The MRFE6VS25GN-960 is housed in an NI-360H-2L air-cavity ceramic package with two RF terminals (input and output) and two DC supply pins (VDD and VSS). The package uses flange-mount construction for direct thermal coupling to heatsinks and features gold-plated leads for wire-bond interconnect.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| RF IN | Unmatched gate input | Requires external broadband matching network for 50 Ω system interface. |
| RF OUT | Unmatched drain output | Designed for integration into tuned or broadband output matching circuits feeding final-stage devices. |
| VDD | Drain supply terminal | Accepts 50 V DC; must be decoupled with low-ESR RF capacitors near package flange. |
| VSS | Source ground reference | DC return path; electrically tied to flange; requires low-inductance grounding to chassis. |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched LDMOS architecture | Enables flexible external matching for multi-band DME/ADS-B/TCAS optimization across 960–1215 MHz. |
| High VSWR ruggedness (65:1) | Ensures operational reliability during antenna switching transients and duplexing mismatches in airborne transponders. |
| NI-360H-2L ceramic package | Provides superior thermal resistance (< 0.8°C/W junction-to-case) and hermetic sealing for extended life in vibration-prone environments. |
| 50 V operation with low quiescent current | Reduces system-level power conversion complexity while maintaining >80 mA IDQ1 / 150 mA IDQ2 bias stability over temperature. |
Applications
| DME Ground Station Transmitter | ADS-B Out Transponder Module |
|---|---|
Use Scenario: Pulse-modulated 960–1215 MHz transmission in ground-based distance measuring equipment with antenna switching and variable load conditions. IC Role / Device Role / Timing Role: Driver-stage RF power amplifier providing 30 W peak to final-stage LDMOS devices under 5% duty cycle. Use Value: Enables compact, thermally robust transmitter designs with proven 65:1 VSWR tolerance during antenna reconfiguration. | Use Scenario: Installed in certified aircraft transponders for 1090 MHz ADS-B Out broadcast with strict EMI and thermal constraints. IC Role / Device Role / Timing Role: Pre-driver amplifying MMG3005N output to drive 500 W final stages in pulse-mode operation. Use Value: Delivers stable 16 dB gain and 45% efficiency at 10% duty cycle, reducing cooling requirements in sealed avionics enclosures. |
| Secondary Surveillance Radar (SSR) Interrogator | Mode S Extended Squitter (ELS) Transmitter |
Use Scenario: Air traffic control SSR interrogators operating at 1030 MHz with high pulse repetition frequency and tight timing accuracy. IC Role / Device Role / Timing Role: Mid-stage amplifier in three-stage chain (e.g., MMG3005N → MRFE6VS25GN-960 → AFV121KH) delivering precise pulse fidelity. Use Value: Maintains <0.5 dB gain flatness across 960–1215 MHz, supporting accurate pulse rise/fall time control required for Mode A/C/S decoding. | Use Scenario: Certified ELS transmitters in GA and regional aircraft requiring DO-160 compliance and long-term reliability. IC Role / Device Role / Timing Role: RF driver enabling deterministic 128 μs pulse generation with minimal group delay variation. Use Value: Supports 10-year field life under thermal cycling due to NI-360H-2L package integrity and LDMOS process ruggedness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V10010N | I/O matched, 10 W output, PLD-1.5 plastic package, 24 dB gain | Optimized for narrowband 1090 MHz only; lower power and less rugged than MRFE6VS25GN-960 | Choose when cost-sensitive, single-frequency 1090 MHz designs require simplified matching and lower thermal overhead. |
| MRFE6VS25N | Same die, TO-270-2 plastic package, identical electrical specs but lower thermal performance and non-hermetic | Not qualified for flight-critical avionics; limited to ground test or non-certified subsystems | Choose only for lab validation or non-flight prototypes where NI-360H-2L ceramic reliability is unnecessary. |
Compared with MRF6V10010N and MRFE6VS25N, the MRFE6VS25GN-960 provides wider bandwidth (960–1215 MHz vs. 1090 MHz only), higher ruggedness (65:1 vs. 10:1 VSWR), and superior thermal management via ceramic packaging-making it the only option qualified for production airborne DME and SSR interrogator drivers.
Availability
MRFE6VS25GN-960 is available at Aetrix Electronics and suitable for DME ground stations, ADS-B Out transponders, secondary surveillance radar interrogators, and Mode S ELS transmitters requiring stable component supply across aerospace OEM and Tier-1 production programs.
Supply support for MRFE6VS25GN-960 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-reliability RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. It supplies >50% of the world's cellular and avionics RF power transistors.
The MRFE6VS25GN-960 belongs to NXP's Airfast® LDMOS portfolio, engineered specifically for commercial aerospace RF power amplification-emphasizing ruggedness, wideband operation, and thermal resilience in safety-critical airborne systems.
FAQ
What is the primary frequency range supported by the MRFE6VS25GN-960?
The MRFE6VS25GN-960 is fully characterized and specified for operation across 960–1215 MHz, covering the entire DME band and supporting ADS-B Out, TCAS, and SSR interrogator applications. Its performance data-including 30 W output, 16 dB gain, and 45% efficiency-is validated at multiple frequencies within this range, not limited to 1090 MHz alone.
Is the MRFE6VS25GN-960 pin-compatible with the MRFE6VS25N?
No, the MRFE6VS25GN-960 is not pin-compatible with the MRFE6VS25N. While both share the same RF die, the MRFE6VS25GN-960 uses the NI-360H-2L ceramic package with flange-mounted RF terminals, whereas the MRFE6VS25N uses the TO-270-2 plastic package with different leadframe geometry and thermal pad configuration. PCB layout and thermal interface must be redesigned for interchange.
Does the MRFE6VS25GN-960 require external matching networks?
Yes, the MRFE6VS25GN-960 is an unmatched device-both input and output impedances are unoptimized for 50 Ω systems. External broadband matching networks are mandatory for proper impedance transformation, especially to maintain VSWR tolerance and gain flatness across 960–1215 MHz. Reference designs for DME applications are documented in NXP BR1608A4.
What is the maximum allowable duty cycle for continuous operation of the MRFE6VS25GN-960?
The MRFE6VS25GN-960 is rated for pulsed operation up to 10% duty cycle at 128 μs pulse width, as verified in NXP's BR1608A4 characterization. Operation beyond 10% duty cycle risks thermal runaway due to insufficient heat dissipation in the NI-360H-2L package-even with forced-air cooling-unless derated per NXP's Safe Operating Area (SOA) curves.
Can the MRFE6VS25GN-960 be used in S-Band radar applications?
No, the MRFE6VS25GN-960 is not characterized or qualified for S-Band (2700–2900 MHz) operation. Its gain, efficiency, and stability are validated only from 960–1215 MHz. For S-Band radar, NXP recommends alternatives such as MRF8P29300H or A2I25D025N, which are specifically designed and tested for that frequency range.
MRFE6VS25GN-960 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- 960MHz ~ 1.215GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRFE6VS25N
MRFE6VS25GN-960 FAQ
1.How can I place an order for MRFE6VS25GN-960 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFE6VS25GN-960 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFE6VS25GN-960 reliable?
The price and inventory of MRFE6VS25GN-960 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFE6VS25GN-960 is usually 5 days.
3.What payment methods are accepted for MRFE6VS25GN-960?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFE6VS25GN-960 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFE6VS25GN-960?
MRFE6VS25GN-960 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFE6VS25GN-960 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFE6VS25GN-960?
For technical support, including MRFE6VS25GN-960 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFE6VS25GN-960 requirements.
6.How does Aetrix verify that MRFE6VS25GN-960 is sourced from the original manufacturer or authorized distributors?
All MRFE6VS25GN-960 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFE6VS25GN-960 meets industry standards.
7.What is the process for return or replacement of MRFE6VS25GN-960?
All MRFE6VS25GN-960 units undergo pre-shipment inspection (PSI). If there is an issue with MRFE6VS25GN-960, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFE6VS25GN-960 part is unused and in its original packaging.
Return procedure for MRFE6VS25GN-960:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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