NXP Semiconductors MRFE6VS25GNR1

Overview

MRFE6VS25GNR1 from NXP Semiconductors is a 25 W, 50 V RF power LDMOS transistor designed for high-ruggedness broadband amplification in ISM, broadcast, and aerospace systems operating from 1.8 to 2000 MHz. It delivers 25.4 dB gain and 74.5% drain efficiency at 512 MHz (CW), withstands >65:1 VSWR at all phase angles under 3 dB overdrive, and features integrated stability enhancements and extended ESD protection.

For engineers reviewing the MRFE6VS25GNR1 datasheet, MRFE6VS25GNR1 pinout, MRFE6VS25GNR1 application, or MRFE6VS25GNR1 equivalent, key selection criteria include its 1.2 °C/W thermal resistance (junction-to-case), TO-270G-2 gull-wing plastic package, ruggedness-tested performance across 1.8–2000 MHz, and suitability for high-VSWR environments such as industrial plasma generators and HF/VHF/UHF transmitters.

Technical Context

This device is an enhancement-mode, N-channel lateral MOSFET fabricated on NXP's enhanced ruggedness platform. Its gate threshold voltage (1.5–2.5 V) and quiescent gate voltage (2.0–3.0 V at IDQ = 10 mA) support stable Class AB biasing across temperature. The low input capacitance (39.2 pF typ.) and output capacitance (14.2 pF typ.) enable wideband matching from HF through UHF.

Thermal design is enabled by direct-source-backside mounting (source terminal is package backside), with CW-rated junction temperature up to +225 °C and pulse-rated thermal impedance of 0.29 °C/W. Ruggedness validation includes no degradation under >65:1 VSWR at 30, 512, and 1030 MHz with 3 dB overdrive.

Key Specifications

Pinout & Package

MRFE6VS25GNR1 is housed in a TO-270G-2 plastic gull-wing surface-mount package. The backside of the package is electrically connected to the source terminal, enabling low-inductance thermal and electrical grounding when mounted directly to a heatsink or ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6V2010NR1 and MRFE6P20HNR1, MRFE6VS25GNR1 uniquely combines 25 W CW output, >65:1 VSWR tolerance across three discrete bands, and 1.2 °C/W thermal resistance - making it the only option among the three qualified for high-stress ISM plasma and broadcast exciter duty cycles.

Availability

MRFE6VS25GNR1 is available at Aetrix Electronics and suitable for ISM plasma generators, broadcast exciters, aerospace transceivers, and UHF land mobile radios requiring stable component supply and long-term production continuity.

Supply support for MRFE6VS25GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets.

The MRFE6VS25GNR1 belongs to NXP's RF Power LDMOS Transistor product line, engineered specifically for high-ruggedness, wideband RF amplification in mission-critical industrial and broadcast systems where reliability under mismatched loads is non-negotiable.

FAQ

What is the maximum junction temperature rating for MRFE6VS25GNR1?

The MRFE6VS25GNR1 has a maximum operating junction temperature of +225 °C, validated for continuous CW operation at 25 W and 50 Vdc. This rating enables high-temperature deployment in sealed enclosures and conduction-cooled systems, provided case temperature remains ≤+150 °C per datasheet Table 1.

How does the TO-270G-2 package differ from TO-270-2 for MRFE6VS25GNR1?

The MRFE6VS25GNR1 uses the TO-270G-2 package, which features gull-wing leads for surface-mount assembly, whereas the MRFE6VS25NR1 uses the straight-lead TO-270-2 variant. Both share identical die, thermal performance, and pinout, but the G-suffix version requires reflow-compatible PCB layout per AN1907.

What is the gate-source leakage current specification for MRFE6VS25GNR1?

The MRFE6VS25GNR1 specifies a maximum gate-source leakage current (IGSS) of 400 nAdc at VGS = 5 Vdc and VDS = 0 Vdc, measured at TA = 25 °C. This ultra-low leakage supports stable Class AB biasing and minimizes drift in precision RF amplifier designs.

Can MRFE6VS25GNR1 operate reliably at 1030 MHz?

Yes, the MRFE6VS25GNR1 is characterized and validated for 25 W CW operation at 1030 MHz, delivering 22.5 dB gain and 60% drain efficiency in NXP's narrowband reference circuit. Load mismatch testing confirms >65:1 VSWR tolerance at this frequency with no device degradation.

What thermal measurement methodology applies to MRFE6VS25GNR1's RθJC value?

The 1.2 °C/W thermal resistance (RθJC) for MRFE6VS25GNR1 is measured under CW conditions: case temperature 80 °C, 25 W output, 50 Vdc, IDQ = 10 mA, at 512 MHz, per AN1955. Pulse-mode ZθJC = 0.29 °C/W is measured at 77 °C case temperature, 100 µsec pulse width, and 20% duty cycle.