NXP Semiconductors MRFX035H-2MHZ

Overview

MRFX035H-2MHZ from NXP Semiconductors is a high-ruggedness RF power LDMOS transistor designed for broadband industrial, medical, and broadcast amplifiers operating from 1.8 to 512 MHz. It delivers 35 W CW output at 230 MHz, achieves 75.8% drain efficiency, supports 65 Vdc drain supply, and withstands >65:1 VSWR at all phase angles under 3 dB overdrive.

For engineers reviewing the MRFX035H-2MHZ datasheet, MRFX035H-2MHZ pinout, MRFX035H-2MHZ application, or MRFX035H-2MHZ equivalent, this device is selected for high-VSWR-tolerant HF/VHF amplifier stages requiring stable 35 W CW performance, rugged 179 V_BRDSS, and native 50 Ω output impedance in NI-360H-2SB air-cavity packaging.

Technical Context

The MRFX035H-2MHZ employs a lateral enhancement-mode N-channel LDMOS structure with integrated ESD protection, enabling Class AB or Class C operation across 1.8–512 MHz without external input matching. Its gate threshold voltage (1.7–3.0 V) and quiescent gate voltage (2.5–3.5 V at 15 mA I_DQ) support stable biasing in wideband linear and saturated RF power stages.

Thermal design is enabled by a low 1.3 °C/W junction-to-case thermal resistance and a maximum junction temperature of +225 °C. The device is characterized for operation from 30–65 V_DD, with breakdown voltage rated at 179 V_DC and gate-source voltage limits of –6.0/+10.0 V_DC.

Key Specifications

Pinout & Package

The MRFX035H-2MHZ is housed in the NI-360H-2SB air-cavity ceramic/metal package. The backside metal slug serves as the source terminal and must be electrically connected to system ground. Thermal and electrical performance depend on proper mounting to a grounded copper baseplate using recommended solder reflow profiles per AN1908.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF101AN and PD57018-E, the MRFX035H-2MHZ uniquely balances 35 W CW output, 65 V operation, >65:1 VSWR ruggedness, and 15-year supply assurance in a thermally optimized NI-360H-2SB package-making it the preferred choice for mid-power industrial and medical RF systems demanding long-term reliability.

Availability

MRFX035H-2MHZ is available at Aetrix Electronics and suitable for industrial heating, MRI RF amplifiers, and HF broadcast transmitters requiring stable component supply, long-lifecycle assurance, and high-VSWR tolerance.

Supply support for MRFX035H-2MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN transistors for mission-critical industrial, medical, and broadcast infrastructure.

The MRFX035H-2MHZ belongs to NXP's MRFX series of high-ruggedness LDMOS transistors, engineered specifically for wideband RF power amplification in environments with extreme load mismatches and long operational lifetimes.

FAQ

What is the maximum drain-source voltage rating for MRFX035H-2MHZ?

The MRFX035H-2MHZ has a maximum drain-source voltage (V_DSS) rating of +179 Vdc, with a minimum of –0.5 Vdc. This high breakdown voltage supports reliable operation in high-VSWR industrial and broadcast applications where transient voltage spikes occur. The 179 V rating is confirmed in Table 1 of the official NXP datasheet Rev. 0 (Dec. 2018) and enables safe operation at 65 Vdc supply with substantial margin. MRFX035H-2MHZ maintains this rating across its full operating temperature range.

Does MRFX035H-2MHZ require external input matching networks?

No, the MRFX035H-2MHZ features unmatched input impedance, allowing direct 50 Ω RF drive across its entire 1.8–512 MHz frequency range. This eliminates discrete input matching components in many HF/VHF amplifier designs. The device's input capacitance (C_iss = 42.8 pF typical) and gate threshold characteristics are optimized for broadband 50 Ω system integration. MRFX035H-2MHZ reference circuits (e.g., 1.8–54 MHz broadband layout) confirm this architecture in practice.

What thermal resistance does MRFX035H-2MHZ exhibit from junction to case?

The MRFX035H-2MHZ exhibits a thermal resistance of 1.3 °C/W from junction to case (R_θJC) under CW conditions at 35 W output, 65 Vdc, and 230 MHz. This value is measured with case temperature at 74.2 °C and is specified in Table 2 of the NXP datasheet. The low R_θJC enables efficient heat transfer to the baseplate when mounted per AN1908 reflow guidelines. MRFX035H-2MHZ's thermal performance directly supports its +225 °C maximum junction temperature rating.

Is MRFX035H-2MHZ qualified for 65 Vdc drain supply operation?

Yes, the MRFX035H-2MHZ is fully qualified for continuous operation at 65 Vdc drain supply, as stated in its "Features" section and validated in functional test data (Table 4). All typical performance metrics-including 35 W output, 24.8 dB gain, and 75.8% efficiency at 230 MHz-are measured at V_DD = 65 Vdc. MRFX035H-2MHZ is also characterized across 30–65 Vdc to support flexible power system design, and its absolute maximum V_DSS rating of 179 Vdc provides ample safety margin.

How is the source terminal connected on MRFX035H-2MHZ?

The source terminal of the MRFX035H-2MHZ is the metallized backside of the NI-360H-2SB package, which must be soldered directly to a grounded copper baseplate. Figure 1 and the "Note" beneath it in the NXP datasheet explicitly state: "The backside of the package is the source terminal for the transistor." This configuration serves both as the electrical return path and the primary thermal conduction route. MRFX035H-2MHZ thermal and RF performance depends on low-resistance, low-inductance bonding of this surface per AN1908.