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NXP Semiconductors MRFX035H-30MHZ
- Part No.:
- MRFX035H-30MHZ
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRFX035H-30MHZ.pdf
- Description:
- MRFX035H REF BRD 400MHZ 35W
- Quantity:
- Payment:
- Shipping:
Inventory:4,098
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Product details
Overview
MRFX035H-30MHZ from NXP Semiconductors is a high-ruggedness RF power LDMOS transistor designed for broadband industrial, medical, and broadcast amplifiers operating from 1.8 to 512 MHz. It delivers 35 W CW output at 230 MHz, achieves 75.8% drain efficiency, supports 65 Vdc drain supply, and withstands >65:1 VSWR at all phase angles under 3 dB overdrive.
For engineers reviewing the MRFX035H-30MHZ datasheet, MRFX035H-30MHZ pinout, MRFX035H-30MHZ application, or MRFX035H-30MHZ equivalent, this device is selected for high-VSWR-tolerant HF/VHF amplifier stages requiring stable 35 W CW output, rugged 179 Vds breakdown, and native 50 Ω output impedance without external matching networks.
Technical Context
This enhancement-mode lateral MOSFET operates with gate threshold voltage of 1.7–3.0 Vdc and quiescent gate-source voltage of 2.5–3.5 Vdc at 15 mA IDQ. Its thermal resistance is 1.3 °C/W (junction-to-case), enabling reliable operation up to +225 °C junction temperature.
The device features integrated ESD protection (HBM Class 2, CDM Class C3), reverse transfer capacitance of 0.13 pF, and input/output capacitances of 42.8 pF and 13.7 pF respectively - parameters critical for broadband matching network design across 30–400 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Pout (CW) | 35 W at 230 MHz - sufficient for Class AB/C HF/VHF final stages in PMR base stations and RF ablation systems |
| Gps | 24.8 dB typical at 230 MHz - enables single-stage gain sufficient to drive 50 Ω loads from low-level driver outputs |
| Drain Efficiency (ηD) | 75.8% at 230 MHz - reduces thermal load and heatsink size in compact industrial heating amplifiers |
| V(BR)DSS | 179 Vdc minimum - supports 65 Vdc operation with >2.7× voltage margin for transient suppression in broadcast transmitters |
| RθJC | 1.3 °C/W - allows direct mounting to copper baseplates for high-power continuous-wave operation without forced air |
| VSWR Tolerance | >65:1 at 230 MHz with no degradation - eliminates need for circulators or VSWR-sensing protection in MRI and plasma generators |
| ESD Rating | HBM 2500 V, CDM 1200 V - ensures robust handling during PCB assembly and field service in mobile radio environments |
Pinout & Package
MRFX035H-30MHZ is housed in the NI-360H-2SB air-cavity ceramic package. The backside metal serves as the source terminal. Drain and gate terminals are on the top surface per Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Pin 2) | High-current RF output node | Connected directly to output matching network; requires low-inductance thermal path to heatsink |
| Gate (Pin 1) | RF input control terminal | High-impedance node; must be DC-blocked and impedance-matched to 50 Ω source for stability |
| Source (Backside) | Common reference and current return path | Electrically and thermally bonded to system ground plane; defines RF return path for both input and output circuits |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched input/output | Enables wideband operation from 1.8–512 MHz without internal matching components - simplifies amplifier layout across ISM and broadcast bands |
| 50 Ω native output impedance | Reduces external output matching complexity in 30–400 MHz range - cuts component count and insertion loss in VHF TV transmitters |
| 65 Vdc maximum VDD rating | Supports high-efficiency Class AB operation while maintaining safe margin below 179 V breakdown - critical for aerospace radar pulse amplifiers |
| Integrated ESD protection | Extends negative VGS range for stable Class C biasing in HF communications - improves reliability in portable PMR base station modules |
| NXP product longevity program | Guaranteed 15-year supply continuity - mitigates obsolescence risk in MRI and particle accelerator OEM designs |
Applications
| Industrial Heating Systems | RF Ablation Equipment |
|---|---|
Use Scenario: High-power RF energy delivery into conductive materials for uniform thermal processing in vacuum furnaces. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating at 27.12 MHz or 40.68 MHz ISM bands. Use Value: 75.8% drain efficiency at 230 MHz scales linearly to >70% at 27–40 MHz - minimizes cooling requirements in sealed chamber environments. |
Use Scenario: Precise tissue heating via monopolar/bipolar electrodes in surgical ablation generators. IC Role / Device Role / Timing Role: Linear RF power stage delivering 35 W CW into variable 25–150 Ω loads. Use Value: >65:1 VSWR tolerance prevents fault shutdown during electrode contact transitions - essential for uninterrupted procedure continuity. |
| PMR Base Stations | Aerospace HF Communications |
Use Scenario: Multi-channel trunked radio infrastructure operating in 136–174 MHz VHF band with high spectral efficiency. IC Role / Device Role / Timing Role: High-linearity final amplifier supporting 16QAM/OFDM modulation schemes. Use Value: 24.8 dB power gain at 150 MHz reduces driver stage complexity - lowers BOM cost and board area in compact base station radios. |
Use Scenario: Long-range HF voice/data links in military aircraft with severe vibration and thermal cycling. IC Role / Device Role / Timing Role: Ruggedized final amplifier in 1.6–30 MHz transceiver front-end. Use Value: 225 °C max junction temperature and 1.3 °C/W thermal resistance ensure operation under sustained +85 °C ambient conditions - validated per MIL-STD-810G. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF101AN | Lower Pout (20 W), narrower bandwidth (1.8–200 MHz), lower V(BR)DSS (130 V) | Suitable for lower-power HF comms where thermal budget is constrained | Select when 35 W output is unnecessary and cost sensitivity outweighs ruggedness requirements |
| PD57018-E | Higher Pout (100 W), higher VDD (50 V), different package (SOT-1222) | Better suited for UHF broadcast where higher gain and efficiency above 400 MHz are required | Choose only if redesigning PCB layout for SOT-1222 footprint and accepting reduced VSWR tolerance (20:1) |
Compared with MRF101AN and PD57018-E, MRFX035H-30MHZ uniquely balances 35 W output, 65:1 VSWR ruggedness, and 1.8–512 MHz bandwidth - making it optimal for multi-band industrial and medical systems where reliability under mismatched loads is non-negotiable.
Availability
MRFX035H-30MHZ is available at Aetrix Electronics and suitable for industrial heating systems, RF ablation equipment, PMR base stations, aerospace HF communications, and broadcast transmitters requiring stable component supply across long-life programs.
Supply support for MRFX035H-30MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication markets.
The MRFX035H-30MHZ belongs to NXP's RF Power LDMOS portfolio, engineered specifically for high-reliability, high-VSWR-tolerant amplification in industrial, medical, and broadcast infrastructure - not general-purpose switching or logic applications.
FAQ
What is the maximum operating frequency range supported by the MRFX035H-30MHZ?
The MRFX035H-30MHZ is characterized for operation from 1.8 MHz to 512 MHz. Performance data confirms usable gain and efficiency across this full range, with specific test points at 1.8–54 MHz (broadband reference circuit) and 230 MHz (production test fixture). At 30 MHz - the nominal frequency in the part number - the device maintains ≥24 dB power gain and >65% drain efficiency per typical broadband performance curves.
Does the MRFX035H-30MHZ require external matching networks for 30 MHz operation?
Yes, the MRFX035H-30MHZ is an unmatched device and requires external input and output matching networks. At 30 MHz, the recommended source and load impedances are approximately 42–43 Ω –j2–j3 Ω (input) and 46–49 Ω ±j0–j3 Ω (output) based on broadband reference circuit measurements - meaning discrete LC networks or transmission line transformers must be implemented per application-specific PA topology.
What is the gate threshold voltage specification for MRFX035H-30MHZ?
The MRFX035H-30MHZ has a gate threshold voltage (VGS(th)) of 1.7–3.0 Vdc, measured at VDS = 10 Vdc and ID = 640 µAdc. This range ensures predictable turn-on behavior across temperature and process variation, supporting stable Class AB biasing with VGS(Q) = 2.5–3.5 Vdc at IDQ = 15 mA and VDD = 65 Vdc.
Can MRFX035H-30MHZ be used in Class C amplifier configurations?
Yes, the MRFX035H-30MHZ supports Class C operation due to its extended negative gate-source voltage range enabled by integrated ESD protection. The datasheet explicitly states suitability for linear applications "with appropriate biasing" and highlights enhanced Class C capability - verified by stable operation at VGS down to –6.0 Vdc and demonstrated ruggedness under overdrive conditions.
What thermal interface material is recommended for mounting MRFX035H-30MHZ?
NXP recommends solder reflow attachment per Application Note AN1908 for the NI-360H-2SB package. Conductive epoxies or thermal greases are not advised - the air-cavity ceramic package is designed for direct solder bonding to copper baseplates or heatsinks using controlled reflow profiles to ensure mechanical integrity and optimal 1.3 °C/W thermal resistance.
MRFX035H-30MHZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- 30MHz ~ 40MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRFX035H
MRFX035H-30MHZ FAQ
1.How can I place an order for MRFX035H-30MHZ through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFX035H-30MHZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFX035H-30MHZ reliable?
The price and inventory of MRFX035H-30MHZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFX035H-30MHZ is usually 5 days.
3.What payment methods are accepted for MRFX035H-30MHZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFX035H-30MHZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFX035H-30MHZ?
MRFX035H-30MHZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFX035H-30MHZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFX035H-30MHZ?
For technical support, including MRFX035H-30MHZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFX035H-30MHZ requirements.
6.How does Aetrix verify that MRFX035H-30MHZ is sourced from the original manufacturer or authorized distributors?
All MRFX035H-30MHZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFX035H-30MHZ meets industry standards.
7.What is the process for return or replacement of MRFX035H-30MHZ?
All MRFX035H-30MHZ units undergo pre-shipment inspection (PSI). If there is an issue with MRFX035H-30MHZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFX035H-30MHZ part is unused and in its original packaging.
Return procedure for MRFX035H-30MHZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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