NXP Semiconductors MRFX035HR5

Overview

MRFX035HR5 from NXP Semiconductors is a high-ruggedness, 35 W CW, 65 V LDMOS RF power transistor designed for broadband amplification in industrial, medical, broadcast, and aerospace systems operating from 1.8 to 512 MHz. It delivers 24.8 dB power gain and 75.8% drain efficiency at 230 MHz, features 50 Ω native output impedance, and supports >65:1 load VSWR without degradation under 3 dB overdrive.

For engineers reviewing the MRFX035HR5 datasheet, MRFX035HR5 pinout, MRFX035HR5 application, or MRFX035HR5 equivalent, this page provides verified electrical specs, ruggedness validation, thermal resistance (1.3 °C/W), gate threshold voltage (2.75 V typ), and production test fixture impedance data for reliable RF PA design and replacement evaluation.

Technical Context

This N-channel enhancement-mode lateral MOSFET uses an unmatched input/output architecture enabling operation across 1.8–512 MHz without external matching networks in reference circuits. Its 179 V_DS breakdown rating and –40 to +225 °C junction temperature range support high-VSWR industrial heating and plasma generation applications.

The device is characterized at 65 V_DD with quiescent current of 15 mA (230 MHz) and 25 mA (1.8–54 MHz), delivering stable gain flatness and efficiency across HF/VHF bands. Integrated ESD protection meets HBM Class 2 (2500 V) and CDM Class C3 (1200 V), enabling robust handling in automated assembly.

Key Specifications

Pinout & Package

MRFX035HR5 is housed in the NI-360H-2SB air-cavity ceramic package (15.24 mm × 15.24 mm × 4.57 mm), with the backside metallization serving as the source terminal. The package is qualified for 65 V_DD operation and rated for case temperatures up to +150 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFX035HR5, MRF101AN offers reduced voltage headroom and ruggedness but saves PCB area, while PD57018-E extends power capability at the cost of lower low-frequency gain and higher thermal resistance-making MRFX035HR5 optimal for 1.8–512 MHz industrial and broadcast systems demanding both wideband linearity and proven VSWR resilience.

Availability

MRFX035HR5 is available at Aetrix Electronics and suitable for industrial heating, RF broadcast transmitters, and medical plasma ablation systems requiring stable component supply across long-lifecycle deployments.

Supply support for MRFX035HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communication markets, with deep expertise in RF power technologies.

The MRFX035HR5 belongs to NXP's high-ruggedness LDMOS RF transistor family, engineered specifically for mission-critical industrial, medical, and broadcast amplifiers where reliability under extreme VSWR and extended temperature operation is mandatory.

FAQ

What is the maximum drain-source voltage rating for MRFX035HR5?

The MRFX035HR5 has a maximum drain-source voltage (V_DSS) rating of +179 Vdc, verified per Table 1 in the official NXP datasheet. This high breakdown voltage supports operation under transient overvoltage conditions common in mismatched RF loads, such as plasma generators and detuned broadcast antennas. The device is qualified for continuous operation at 65 V_DD, with derating applied above that level per thermal limits.

Does MRFX035HR5 require external gate protection diodes?

No, MRFX035HR5 includes integrated ESD protection meeting Human Body Model Class 2 (2500 V) and Charge Device Model Class C3 (1200 V), as confirmed in Table 3 of the NXP datasheet. This eliminates the need for external gate protection diodes in standard SMT assembly and normal operating conditions, though proper PCB layout grounding and handling protocols remain essential.

What is the thermal resistance (R_θJC) of MRFX035HR5 and how is it measured?

The MRFX035HR5 has a thermal resistance of R_θJC = 1.3 °C/W, measured under CW conditions at 35 W output, 65 V_DD, 230 MHz, and case temperature of 74.2 °C, as specified in Table 2 of the NXP datasheet. This value reflects the junction-to-case conduction path through the NI-360H-2SB package's copper base and is critical for heatsink sizing in continuous-duty applications.

Can MRFX035HR5 be used in Class C amplifier configurations?

Yes, MRFX035HR5 is suitable for Class C operation due to its extended negative gate-source voltage range (–6.0 V) and integrated ESD protection, as noted in the Features section of the NXP datasheet. This design allows stable cutoff behavior and improved efficiency in tuned RF amplifier stages, provided appropriate biasing and drive level control are implemented per application requirements.

What package type and pin configuration does MRFX035HR5 use?

MRFX035HR5 uses the NI-360H-2SB air-cavity ceramic package with two signal terminals: Pin 1 (Gate) and Pin 2 (Drain). The backside metallization serves as the Source terminal and must be soldered directly to the PCB ground plane for both electrical return and thermal dissipation, as shown in Figure 1 and confirmed in the Package Dimensions section of the NXP datasheet.