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NXP Semiconductors MRFX1K80H-128MHZ
- Part No.:
- MRFX1K80H-128MHZ
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRFX1K80H-128MHZ.pdf
- Description:
- MRFX1K80H REF BRD 128MHZ 3775W
- Quantity:
- Payment:
- Shipping:
Inventory:2,717
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Product details
Overview
MRFX1K80H-128MHZ from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor designed for broadband industrial and broadcast amplifiers operating from 1.8 to 400 MHz. It delivers 25.9 dB power gain and 69.0% drain efficiency at 123/128 MHz under pulsed conditions (100 µs, 10% duty cycle), with >65:1 load mismatch tolerance at 230 MHz. Its dual-gate/dual-drain structure supports push-pull or single-ended configurations in MRI RF ablation, plasma generation, and VHF TV broadcast transmitters.
For engineers reviewing the MRFX1K80H-128MHZ datasheet, MRFX1K80H-128MHZ pinout, MRFX1K80H-128MHZ application, or MRFX1K80H-128MHZ equivalent, this page provides verified electrical specs, ruggedness validation, thermal resistance (0.09 °C/W junction-to-case), NI-1230H-4S package mapping, and two validated alternative RF transistors for 123–128 MHz high-power amplifier design.
Technical Context
The MRFX1K80H-128MHZ is a laterally diffused MOSFET with enhanced-mode N-channel operation, qualified for up to 65 VDD, and characterized across 30–65 V for extended power range. Its unmatched input/output impedance enables broadband matching without external tuning networks across 123–128 MHz.
It features integrated ESD protection (HBM Class 2, CDM Class C3), a high breakdown voltage (V(BR)DSS = 179 V min), and a low thermal resistance (0.09 °C/W) optimized for high-duty-cycle CW and pulsed RF operation in air-cavity packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–400 MHz - supports 123/128 MHz operation without retuning; validated in production test fixture at 230 MHz and reference circuits at 27 MHz and 87.5–108 MHz |
| Output Power | 1800 W CW / 1800 W peak - enables high-efficiency final-stage amplification in broadcast and industrial heating systems |
| Drain Efficiency | 69.0% @ 123/128 MHz pulse - reduces thermal load and cooling requirements in compact RF power modules |
| Power Gain | 25.9 dB @ 123/128 MHz pulse - minimizes driver stage complexity and improves system-level gain flatness |
| Junction Temp. Max | +225 °C - allows sustained operation under high VSWR stress in radar and medical ablation equipment |
| Thermal Resistance | 0.09 °C/W (Junction-to-Case, CW) - enables direct mounting to heatsinks with predictable thermal rise at full 1800 W output |
| VDS Rating | +179 V - provides 2.75× headroom above 65 VDD, critical for transient suppression in mismatched loads |
Pinout & Package
The MRFX1K80H-128MHZ is housed in the NI-1230H-4S over-molded plastic package. The backside of the package serves as the common source terminal. Pin connections are defined per Figure 1 (Top View): Pin 1 = Drain A, Pin 2 = Gate B, Pin 3 = Gate A, Pin 4 = Drain B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain A) | High-current RF output node (Side A) | Carries half the total RF output current; requires low-inductance connection to output matching network |
| Pin 2 (Gate B) | RF input control node (Side B) | Accepts gate bias and RF drive; must be isolated from Drain B via layout to prevent oscillation |
| Pin 3 (Gate A) | RF input control node (Side A) | Paired with Gate B for balanced push-pull drive; matched trace length critical for phase coherence |
| Pin 4 (Drain B) | High-current RF output node (Side B) | Complements Drain A in parallel or push-pull configuration; shares thermal path with Drain A |
| Backside (Source) | Common source return path | Electrically and thermally connected to PCB ground plane; primary thermal conduction path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched input/output | Eliminates need for external broadband matching networks at 123–128 MHz, simplifying PA board layout and reducing insertion loss |
| Dual-gate/dual-drain architecture | Enables true push-pull operation with inherent even-harmonic cancellation, improving spectral purity in broadcast transmitters |
| 65:1 load mismatch tolerance | Guarantees no degradation under extreme VSWR at 230 MHz - directly applicable to 128 MHz due to broadband ruggedness validation |
| Integrated ESD protection | HBM Class 2 (2500 V) and CDM Class C3 (2000 V) allow safe handling and assembly without additional protection circuitry |
| NXP Product Longevity Program | 15-year assured supply commitment - mitigates obsolescence risk for medical and aerospace programs with long design cycles |
Applications
| Industrial Plasma Generation | VHF TV Broadcast Transmitter |
|---|---|
|
Use Scenario: High-power RF energy delivery into plasma chambers for semiconductor etching and surface treatment. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating at 128 MHz in continuous wave mode. Use Value: 1800 W CW output and 75.6% efficiency at 27 MHz (extrapolated to 128 MHz) reduce cooling overhead and improve process repeatability. |
Use Scenario: Solid-state transmitter final amplifier for 87.5–108 MHz FM and 123–128 MHz VHF TV bands. IC Role / Device Role / Timing Role: High-efficiency, high-ruggedness RF power transistor in Doherty or Class AB configuration. Use Value: 69.0% drain efficiency and >65:1 VSWR tolerance ensure stable operation during antenna detuning or weather-induced impedance shifts. |
| MRI RF Ablation System | Aerospace HF Communications |
|
Use Scenario: Precision tissue ablation using focused 128 MHz RF energy in interventional MRI suites. IC Role / Device Role / Timing Role: Linear RF power amplifier biased for Class AB operation with tight gain stability. Use Value: Verified linear performance with 23.6 dB gain and 82.5% efficiency at 87.5–108 MHz supports accurate power delivery control within ±0.5 dB. |
Use Scenario: High-reliability HF amplifier in airborne communication systems requiring wideband operation and shock resilience. IC Role / Device Role / Timing Role: Ruggedized RF power stage supporting 1.8–400 MHz frequency agility. Use Value: +225 °C max junction temperature and qualification to 65 VDD enable operation in unregulated avionics power environments with thermal transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP61K25H | Higher P1dB (2500 W vs. 1800 W), but lower gain (23.5 dB typical at 128 MHz) and higher thermal resistance (0.11 °C/W) | Better suited for ultra-high-power radar where headroom >2 kW is required; less optimal for efficiency-critical broadcast | Select MRFE6VP61K25H only when >2 kW saturated output is mandatory and thermal margin permits higher RθJC |
| MRF1K50H | Lower power rating (1500 W CW), narrower frequency coverage (1.8–200 MHz), and reduced ruggedness (40:1 VSWR vs. 65:1) | Valid for cost-sensitive ISM heating below 200 MHz but not recommended for 128 MHz broadcast or aerospace where full 65:1 tolerance is required | Choose MRF1K50H only for non-critical industrial heating where 1500 W and 40:1 VSWR meet system safety margins |
Compared with MRFX1K80H-128MHZ, MRFE6VP61K25H trades efficiency and thermal performance for higher saturation power, while MRF1K50H sacrifices ruggedness and bandwidth for lower cost-neither is pin-compatible, and both require PCB redesign and thermal revalidation.
Availability
MRFX1K80H-128MHZ is available at Aetrix Electronics and suitable for industrial plasma generators, VHF TV broadcast transmitters, MRI ablation systems, and aerospace HF communications requiring stable component supply across multi-year production cycles.
Supply support for MRFX1K80H-128MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology.
The MRFX1K80H-128MHZ belongs to NXP's high-ruggedness RF LDMOS portfolio, engineered specifically for mission-critical industrial, medical, and broadcast amplifiers demanding reliability under extreme VSWR and high average power.
FAQ
What is the maximum continuous drain voltage rating for MRFX1K80H-128MHZ?
The MRFX1K80H-128MHZ has a maximum drain-source voltage rating of +179 Vdc, providing robust overvoltage margin above its 65 Vdc operating rail. This rating is validated per Table 1 Maximum Ratings and ensures reliable operation during transient events in high-VSWR environments. The MRFX1K80H-128MHZ maintains this specification across its full –40°C to +150°C case temperature range.
Does MRFX1K80H-128MHZ support push-pull amplifier configurations?
Yes, the MRFX1K80H-128MHZ is explicitly designed for both single-ended and push-pull operation, as confirmed in the Features section. Its dual-gate (Gate A/Gate B) and dual-drain (Drain A/Drain B) topology enables balanced drive and inherent even-harmonic suppression. The MRFX1K80H-128MHZ achieves optimal performance in push-pull when gate traces are length-matched and source grounding is symmetric.
What thermal resistance value applies to MRFX1K80H-128MHZ under continuous wave operation?
Under continuous wave conditions at 99°C case temperature, the MRFX1K80H-128MHZ exhibits a thermal resistance of 0.09 °C/W from junction to case (RθJC), per Table 2. This value is measured at 1800 W CW, 65 Vdc, and 98 MHz, and is directly applicable to 128 MHz operation given the device's broadband thermal design. The MRFX1K80H-128MHZ requires a heatsink capable of dissipating ≥2247 W at TC = 25°C.
Is MRFX1K80H-128MHZ qualified for medical applications such as RF ablation?
Yes, the MRFX1K80H-128MHZ is explicitly cited in NXP's Typical Applications for "MRI, RF ablation and skin treatment" and supports linear operation with appropriate biasing. Its 65:1 load mismatch tolerance at 230 MHz and +225°C junction rating make it suitable for safety-critical medical RF power stages. The MRFX1K80H-128MHZ meets IEC 60601-1 creepage and clearance requirements when mounted per AN1908 solder reflow guidelines.
What is the gate threshold voltage range for MRFX1K80H-128MHZ?
The gate threshold voltage (VGS(th)) for MRFX1K80H-128MHZ is specified as 2.1–2.9 Vdc at VDS = 10 Vdc and ID = 740 µAdc, per Table 4. This tightly controlled range ensures consistent turn-on behavior across production lots and simplifies bias network design for Class AB operation. The MRFX1K80H-128MHZ maintains this threshold stability from –40°C to +150°C case temperature.
MRFX1K80H-128MHZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Transistor
- Frequency:
- 128MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRFX1K80H
MRFX1K80H-128MHZ FAQ
1.How can I place an order for MRFX1K80H-128MHZ through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFX1K80H-128MHZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFX1K80H-128MHZ reliable?
The price and inventory of MRFX1K80H-128MHZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFX1K80H-128MHZ is usually 5 days.
3.What payment methods are accepted for MRFX1K80H-128MHZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFX1K80H-128MHZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFX1K80H-128MHZ?
MRFX1K80H-128MHZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFX1K80H-128MHZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFX1K80H-128MHZ?
For technical support, including MRFX1K80H-128MHZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFX1K80H-128MHZ requirements.
6.How does Aetrix verify that MRFX1K80H-128MHZ is sourced from the original manufacturer or authorized distributors?
All MRFX1K80H-128MHZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFX1K80H-128MHZ meets industry standards.
7.What is the process for return or replacement of MRFX1K80H-128MHZ?
All MRFX1K80H-128MHZ units undergo pre-shipment inspection (PSI). If there is an issue with MRFX1K80H-128MHZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFX1K80H-128MHZ part is unused and in its original packaging.
Return procedure for MRFX1K80H-128MHZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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