NXP Semiconductors MRFX1K80H-175MHZ

Overview

MRFX1K80H-175MHZ from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor optimized for broadband industrial and broadcast amplifiers operating at 175 MHz. It delivers 23.5 dB power gain and 75.9% drain efficiency at 1560 W CW output under 60 V supply, with unmatched input/output impedance enabling single-ended or push-pull configurations in HF/VHF systems.

For engineers reviewing the MRFX1K80H-175MHZ datasheet, MRFX1K80H-175MHZ pinout, MRFX1K80H-175MHZ application, or MRFX1K80H-175MHZ equivalent, this device supports critical high-VSWR operation up to 65:1 at 230 MHz, features integrated ESD protection (HBM Class 2, CDM Class C3), and is qualified for 15-year product longevity in aerospace, MRI, plasma generation, and broadcast transmitters.

Technical Context

The MRFX1K80H-175MHZ is a dual-gate, dual-drain lateral MOSFET with isolated source terminals (backside case connection) and symmetric A/B channel architecture. Its linear model includes 2.9 pF Crss, 203 pF Coss, and 760 pF Ciss at 65 VDS, supporting wideband matching from 1.8–400 MHz using external networks calibrated per reference circuits at 27 MHz, 87.5–108 MHz, and 230 MHz.

Thermal design is enabled by 0.09 °C/W RθJC (CW) and 0.017 °C/W ZθJC (pulse), with junction temperature rated to +225 °C and gate threshold voltage of 2.5 V typical. The device operates in enhancement mode with VGS(th) = 2.1–2.9 V and withstands –6.0/+10 V gate-source voltage, supporting Class AB, B, and C biasing for linear and saturated RF power stages.

Key Specifications

Pinout & Package

Package: NI-1230H-4S - over-molded ceramic/metal air-cavity package with electrically isolated source (case backside), rated for 150 °C case temperature and 2247 W total dissipation at T_C = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFX1K80N and MRF1K50H, the MRFX1K80H-175MHZ delivers superior thermal performance (0.09 °C/W), validated 175 MHz data, and certified CDM ESD protection-making it the sole option for new high-efficiency, high-ruggedness VHF amplifier designs requiring long-term supply assurance.

Availability

MRFX1K80H-175MHZ is available at Aetrix Electronics and suitable for plasma generation, MRI RF amplifiers, broadcast transmitters, aerospace radar, and industrial heating systems requiring stable component supply across 15+ year product lifecycles.

Supply support for MRFX1K80H-175MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN transistors for mission-critical industrial, medical, and communications infrastructure.

The MRFX1K80H-175MHZ belongs to NXP's MRFX series of ultra-rugged RF power transistors, engineered specifically for high-VSWR, high-efficiency broadband amplification in demanding environments such as MRI, plasma, and broadcast.

FAQ

What is the maximum continuous drain current rating for MRFX1K80H-175MHZ?

The MRFX1K80H-175MHZ does not specify a maximum continuous drain current (I_D) rating in its datasheet. Instead, safe operation is defined by thermal limits: junction temperature must remain ≤ +225 °C, with total device dissipation capped at 2247 W at T_C = 25 °C and derated by 11.2 W/°C above that. Actual current depends on V_DS, duty cycle, and heatsinking-typical CW operation at 1560 W output yields ~26 A per channel at 60 V.

Does MRFX1K80H-175MHZ support Doherty amplifier topologies?

Yes, the MRFX1K80H-175MHZ is explicitly characterized for Doherty operation: Table 1 on page 1 shows 21.3 dB gain and 43.3% drain efficiency at 250 W average output in DVB-T (8k OFDM) at 174–230 MHz. Its dual-gate/dual-drain structure and symmetric A/B channels enable precise carrier/peaking path implementation without external balancing components.

What is the gate-source leakage current specification for MRFX1K80H-175MHZ?

Per Table 4 (Electrical Characteristics), the MRFX1K80H-175MHZ has a maximum gate-source leakage current (I_GSS) of 1 µA dc at V_GS = 5 V and V_DS = 0 V. This low leakage supports stable Class AB biasing and minimizes quiescent current drift over temperature in high-reliability RF power amplifiers.

Can MRFX1K80H-175MHZ be operated at 65 V drain supply in continuous wave mode?

Yes, the MRFX1K80H-175MHZ is qualified for continuous operation at 65 V drain supply, as confirmed in the "Features" section ("Qualified up to a maximum of 65 VDD operation") and Typical Performance table (65 V entries at 27 MHz and 144 MHz). However, at 175 MHz, the published CW data uses 60 V (1560 W, 75.9% efficiency); 65 V operation is feasible but requires thermal validation per application conditions.

Is there an s-parameter model (.s2p file) available for MRFX1K80H-175MHZ?

Yes, NXP provides an .s2p file for the MRFX1K80H-175MHZ as part of its official RF design resources. Per the "PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS" section (page 20), the .s2p file is listed alongside the RF High Power Model and Electromigration MTTF Calculator. It can be downloaded directly from nxp.com/RF by searching for MRFX1K80H and selecting ".s2p File" from the resource dropdown menu.