NXP Semiconductors MRFX1K80H-230MHZ

Overview

MRFX1K80H-230MHZ from NXP Semiconductors is a high-ruggedness, 1800 W peak, 65 V LDMOS RF power transistor in NI-1230H-4S over-molded plastic package, designed for broadband industrial, broadcast, and aerospace amplifiers operating at 230 MHz under pulsed conditions (100 µs, 20% duty cycle). It delivers 25.1 dB power gain and 75.1% drain efficiency at 1800 W peak output.

For engineers reviewing the MRFX1K80H-230MHZ datasheet, MRFX1K80H-230MHZ pinout, MRFX1K80H-230MHZ application, or MRFX1K80H-230MHZ equivalent, this page provides verified 230 MHz production-test performance data, ruggedness validation (>65:1 VSWR), thermal impedance (0.017 °C/W), gate threshold (2.1–2.9 V), and load mismatch test results per NXP Rev. 1 (09/2018).

Technical Context

The MRFX1K80H-230MHZ is a dual-gate, dual-drain enhancement-mode lateral MOSFET with unmatched input/output ports, enabling operation from 1.8 to 400 MHz. Its symmetrical structure supports single-ended or push-pull configurations, and it is characterized at 230 MHz using NXP's production test fixture (page 17) with 65 VDD, 100 mA quiescent current, and 1800 W peak output.

Thermal design is enabled by low junction-to-case thermal impedance (ZθJC = 0.017 °C/W under pulse conditions) and high junction temperature rating (TJ up to +225 °C). ESD protection meets HBM Class 2 (2500 V) and CDM Class C3 (2000 V), supporting robust Class C and linear biasing schemes.

Key Specifications

Pinout & Package

Package: NI-1230H-4S - Over-molded plastic air-cavity package with electrically isolated source (backside metal tab), rated for TC = –40 to +150 °C and TJ = –40 to +225 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFX1K80N and MRF1K50H, the MRFX1K80H-230MHZ uniquely combines 230 MHz production-test validation, 0.017 °C/W pulsed thermal impedance, and >65:1 VSWR ruggedness-making it the sole option for mission-critical 230 MHz pulsed radar and aerospace transmitters.

Availability

MRFX1K80H-230MHZ is available at Aetrix Electronics and suitable for industrial plasma generation, HF broadcast transmitters, aerospace radar systems, and RF heating equipment requiring stable component supply across long-lifecycle programs.

Supply support for MRFX1K80H-230MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, headquartered in Eindhoven, Netherlands, with dedicated RF design centers in Arizona and Singapore.

The MRFX1K80H belongs to NXP's MRFX family of wideband LDMOS transistors engineered for rugged, high-efficiency RF amplification in industrial, broadcast, medical, and aerospace systems demanding 1.8–400 MHz coverage and multi-decade supply assurance.

FAQ

What is the validated 230 MHz performance of the MRFX1K80H-230MHZ?

The MRFX1K80H-230MHZ is characterized in NXP's 230 MHz production test fixture (page 17) at 65 VDD, 100 mA quiescent current, 100 µs pulse width, and 20% duty cycle. It delivers 1800 W peak output, 25.1 dB power gain, and 75.1% drain efficiency. Input return loss is –14.4 dB, confirming stable 50 Ω system integration. These values are measured-not extrapolated-and represent production-binned performance.

Does the MRFX1K80H-230MHZ support push-pull configuration?

Yes, the MRFX1K80H-230MHZ supports push-pull operation due to its dual-gate/dual-drain architecture (Gate A/Gate B, Drain A/Drain B) and symmetrical device structure. The datasheet explicitly states "Device can be used single-ended or in a push-pull configuration." Each side is measured separately (footnote 4), and the 230 MHz test fixture uses balanced drive, confirming functional push-pull readiness.

What is the thermal impedance (ZθJC) of the MRFX1K80H-230MHZ under pulsed conditions?

The MRFX1K80H-230MHZ has a thermal impedance of ZθJC = 0.017 °C/W under pulsed conditions (case temperature 65 °C, 1800 W peak, 100 µs pulse width, 20% duty cycle, 230 MHz, 65 VDD, IDQ(A+B) = 100 mA), per Table 2. This value is distinct from its CW-rated RθJC (0.09 °C/W) and is critical for pulsed thermal design in radar and industrial heating applications.

Is the MRFX1K80H-230MHZ qualified for 65 V operation?

Yes, the MRFX1K80H-230MHZ is fully qualified for 65 VDD operation. Table 1 lists VDSS = +179 Vdc max, and the Features section states "Qualified up to a maximum of 65 VDD operation." All 230 MHz performance data-including 1800 W peak output and 75.1% efficiency-is measured at 65 VDD, confirming full qualification at this rail voltage.

What load mismatch ruggedness is verified for the MRFX1K80H-230MHZ at 230 MHz?

At 230 MHz, the MRFX1K80H-230MHZ is verified to survive >65:1 VSWR at all phase angles under pulsed conditions (100 µs, 20% duty cycle), with 14 W peak input power (3 dB overdrive) and 65 VDD, with no device degradation observed (Table 5). This exceeds MIL-STD-883H Method 3013.1 requirements and confirms suitability for antenna-mismatch-prone broadcast and radar transmitters.