NXP Semiconductors MRFX1K80H-27MHZ

Overview

MRFX1K80H-27MHZ from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor optimized for 27 MHz industrial RF amplifiers. It delivers 27.8 dB power gain and 75.6% drain efficiency at 27 MHz CW operation with 65 V supply, and supports unmatched input/output impedance matching across 1.8–400 MHz. Its dual-gate/dual-drain structure enables push-pull or single-ended configurations in plasma generators and RF ablation systems.

For engineers reviewing the MRFX1K80H-27MHZ datasheet, MRFX1K80H-27MHZ pinout, MRFX1K80H-27MHZ application, or MRFX1K80H-27MHZ equivalent, key selection criteria include its 2247 W thermal dissipation rating, 0.09 °C/W junction-to-case thermal resistance under CW conditions, ruggedness to >65:1 VSWR at 230 MHz, and qualification for 65 VDD operation - all critical for high-reliability HF/VHF RF power stages.

Technical Context

This device is a dual-gate, dual-drain N-channel enhancement-mode lateral MOSFET fabricated using NXP's high-voltage LDMOS process. Its symmetrical internal structure supports balanced push-pull operation without external combiners, and integrated ESD protection enables robust Class C biasing with extended negative gate-source voltage tolerance.

Thermal design is enabled by a low 0.09 °C/W R_θJC (CW) and 0.017 °C/W Z_θJC (pulse), validated at 99 °C case temperature (1800 W CW, 98 MHz) and 65 °C case temperature (1800 W peak, 230 MHz). The NI-1230H-4S over-molded plastic package features source-connected backside metallization for direct heatsink mounting.

Key Specifications

Pinout & Package

The MRFX1K80H-27MHZ is housed in the NI-1230H-4S over-molded plastic package. The backside of the package is electrically connected to the source terminal and must be mounted to a thermally conductive, grounded heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF1K50H and MRFE6VP61K25H, the MRFX1K80H-27MHZ delivers the highest CW output power (1800 W) and best thermal resistance (0.09 °C/W) at 27 MHz, making it optimal for high-duty-cycle industrial RF heating and plasma applications where efficiency and reliability outweigh multi-band flexibility.

Availability

MRFX1K80H-27MHZ is available at Aetrix Electronics and suitable for plasma generation, RF ablation, and industrial heating applications requiring stable component supply, long-term lifecycle assurance, and high-VSWR ruggedness.

Supply support for MRFX1K80H-27MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance RF, automotive, and secure connectivity solutions. Founded in 2006 as a spin-off from Philips, NXP serves industrial, medical, and aerospace markets with robust, qualified components.

The MRFX1K80H-27MHZ belongs to NXP's MRFX series of wideband RF power LDMOS transistors, designed specifically for high-reliability, high-efficiency industrial RF energy applications from 1.8 MHz to 400 MHz.

FAQ

What is the maximum continuous drain current rating for MRFX1K80H-27MHZ?

The MRFX1K80H-27MHZ does not specify a maximum continuous drain current in absolute amperes; instead, its safe operating area is defined by thermal limits. At 65 VDD and 1800 W CW output, typical total drain current (ID(A+B)) is ~28 A, constrained by the 2247 W total dissipation limit and 0.09 °C/W thermal resistance. Derating is required above 25 °C case temperature at 11.2 W/°C.

Does MRFX1K80H-27MHZ require external gate resistors for stability?

Yes, the MRFX1K80H-27MHZ requires external gate stopper resistors (typically 5–10 Ω in series with each gate) to suppress VHF/UHF parasitic oscillations. NXP's 27 MHz reference circuit uses 33 Ω chip resistors (R1, R2) on both gate paths, and layout guidelines emphasize short, symmetric gate traces with local decoupling to ensure unconditional stability.

Can MRFX1K80H-27MHZ be operated at 50 V instead of 65 V?

Yes, the MRFX1K80H-27MHZ is characterized from 30 V to 65 V and operates reliably at 50 V. At 50 VDD and 27 MHz CW, it delivers 1200 W output with 26.0 dB gain and 82.3% efficiency (per Table 7). Lower voltage reduces power output but improves efficiency and thermal stress, making it suitable for applications where 1800 W is not required.

What is the gate-source leakage specification for MRFX1K80H-27MHZ?

The MRFX1K80H-27MHZ has a maximum gate-source leakage current (I_GSS) of 1 μA at V_GS = 5 Vdc and V_DS = 0 Vdc (Table 4). This low leakage supports stable quiescent current control and minimizes bias network loading in Class AB amplifiers, especially important for precision RF ablation systems.

Is MRFX1K80H-27MHZ pin-compatible with earlier NXP RF transistors like MRF1K50H?

No, MRFX1K80H-27MHZ is not pin-compatible with MRF1K50H. Although both use the NI-1230H-4S package footprint, the MRFX1K80H-27MHZ has separate Gate A/Gate B and Drain A/Drain B terminals (4-pin active layout), whereas MRF1K50H uses a 3-pin configuration (single gate, single drain, common source). PCB redesign is required for substitution.