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NXP Semiconductors MRFX1K80H-64MHZ
- Part No.:
- MRFX1K80H-64MHZ
- Manufacturer:
- NXP Semiconductors
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
MRFX1K80H-64MHZ.pdf
- Description:
- MRFX1K80H REF BRD 64MHZ 1800W
- Quantity:
- Payment:
- Shipping:
Inventory:2,956
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Product details
Overview
MRFX1K80H-64MHZ from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor optimized for industrial, broadcast, and aerospace applications operating at 64 MHz. It delivers 27.1 dB power gain and 69.5% drain efficiency in pulsed mode (100 µs, 10% duty cycle) with unmatched input/output impedance for wideband operation from 1.8–400 MHz.
For engineers reviewing the MRFX1K80H-64MHZ datasheet, MRFX1K80H-64MHZ pinout, MRFX1K80H-64MHZ application, or MRFX1K80H-64MHZ equivalent, this device supports high-VSWR environments (>65:1 at 230 MHz), operates up to +225°C junction temperature, and is qualified for 15-year product longevity under NXP's assured supply program.
Technical Context
The MRFX1K80H-64MHZ is a dual-gate, dual-drain lateral MOSFET with isolated source terminals (backside mounting). Its architecture enables push-pull or single-ended configurations and supports broadband matching across HF/VHF bands without external tuning networks.
It features integrated ESD protection (HBM Class 2, CDM Class C3), a 179 VDS breakdown rating, and thermal resistance of 0.09 °C/W (CW) - validated at 99°C case temperature with 1800 W CW output at 98 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–400 MHz - supports multi-band ISM, broadcast, and radar systems without retuning |
| Output Power (CW) | 1800 W @ 64 MHz, 65 V - enables high-power amplification in fixed-frequency transmitters |
| Power Gain | 27.1 dB (pulsed, 100 µs/10%) - provides sufficient small-signal drive margin for linear PA stages |
| Drain Efficiency | 69.5% (pulsed) / 75.6% (CW @ 27 MHz) - reduces thermal load and DC power consumption |
| Junction Temp Limit | +225°C - allows operation in high-ambient industrial enclosures with minimal derating |
| VDS Max | +179 V - ensures robustness against voltage transients and mismatch-induced reflections |
| RθJC | 0.09 °C/W (CW) - enables compact heatsink design for 1800 W dissipation at 99°C case temp |
Pinout & Package
MRFX1K80H-64MHZ uses the NI-1230H-4S over-molded plastic package with electrically isolated drain and gate terminals and backside source connection. The package is thermally optimized for high-power RF applications and compatible with standard air-cavity reflow soldering per AN1908.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A (Pin 1) | High-current RF output terminal A | Carries half the total RF output current; requires low-inductance RF grounding and thermal path |
| Gate A (Pin 2) | RF input control terminal A | Accepts balanced RF drive; gate-source voltage range –6.0 to +10 Vdc defines safe bias window |
| Drain B (Pin 4) | High-current RF output terminal B | Paired with Drain A for push-pull operation; symmetric layout minimizes parasitic imbalance |
| Gate B (Pin 3) | RF input control terminal B | Enables differential drive; matched to Gate A for phase coherence in balanced amplifier topologies |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched input/output impedance | Enables direct integration into 50 Ω systems across 1.8–400 MHz without external matching networks |
| High ruggedness (VSWR >65:1) | Survives extreme load mismatches at 230 MHz without degradation - critical for broadcast and plasma systems |
| Integrated ESD protection | HBM Class 2 (2500 V) and CDM Class C3 (2000 V) - eliminates need for external gate protection diodes |
| 15-year product longevity | NXP's assured supply commitment - reduces obsolescence risk for long-lifecycle industrial and aerospace programs |
| Backside source connection | Provides lowest possible source inductance and optimal thermal conduction path to heatsink |
Applications
| Plasma Generation Systems | Laser RF Excitation |
|---|---|
|
Use Scenario: High-power RF energy delivery to plasma chambers for semiconductor etching or surface treatment. IC Role / Device Role / Timing Role: Final-stage RF power amplifier driving resonant matching network into reactive plasma load. Use Value: 1800 W CW output and >65:1 VSWR tolerance ensure stable plasma ignition and sustained operation despite dynamic load shifts. |
Use Scenario: RF-excited CO₂ or excimer lasers requiring precise, high-efficiency RF power at fixed frequencies like 64 MHz. IC Role / Device Role / Timing Role: Linear Class AB/C RF power stage delivering clean, high-fidelity RF envelope to laser discharge tube. Use Value: 27.1 dB gain and 69.5% efficiency reduce driver-stage complexity and thermal management burden in sealed laser cabinets. |
| Broadcast Transmitters (VHF) | Aerospace Radar Modules |
|
Use Scenario: Solid-state AM/FM broadcast amplifiers operating in the 64–88 MHz band with strict linearity and reliability requirements. IC Role / Device Role / Timing Role: High-reliability final RF power stage in multi-kW transmitter chains with active VSWR protection. Use Value: 75.6% CW efficiency at 27 MHz and 60 V operation directly translates to lower AC power draw and reduced cooling infrastructure cost. |
Use Scenario: Ground-based or airborne radar transmitters requiring high peak power and thermal resilience in harsh environments. IC Role / Device Role / Timing Role: Pulsed RF power amplifier operating at 230 MHz with 100 µs pulse width and 20% duty cycle. Use Value: 25.1 dB gain and 75.1% drain efficiency at 230 MHz enable compact, air-cooled radar front-ends meeting MIL-STD-810 thermal profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF1K50H | Lower Pout (1500 W CW), narrower frequency range (1.8–200 MHz), higher RθJC (0.11 °C/W) | Suitable for cost-sensitive VHF broadcast where 1800 W headroom is not required | Select when thermal budget allows larger heatsink or when operating below 200 MHz exclusively |
| MRFE6VP61K25H | Higher VDS rating (260 V), wider bandwidth (1.8–250 MHz), but lower gain (24.5 dB typ @ 230 MHz) | Better suited for ultra-wideband radar or multi-octave military comms with variable frequency agility | Choose for designs requiring extended voltage headroom or broader instantaneous bandwidth beyond 230 MHz |
Compared with MRF1K50H and MRFE6VP61K25H, the MRFX1K80H-64MHZ offers superior CW power density (1800 W), best-in-class ruggedness (>65:1 VSWR), and optimized thermal performance (0.09 °C/W) - making it the preferred choice for fixed-frequency, high-reliability industrial and broadcast amplifiers.
Availability
MRFX1K80H-64MHZ is available at Aetrix Electronics and suitable for industrial heating, broadcast transmission, and aerospace radar applications requiring stable component supply and long-term lifecycle assurance.
Supply support for MRFX1K80H-64MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN technologies for mission-critical industrial and communications infrastructure.
The MRFX1K80H-64MHZ belongs to NXP's MRFX series of wideband RF power transistors, engineered specifically for rugged, high-efficiency amplification in demanding ISM, broadcast, and defense applications.
FAQ
What is the maximum continuous drain voltage rating for MRFX1K80H-64MHZ?
The MRFX1K80H-64MHZ has a maximum drain-source voltage (VDS) rating of +179 Vdc, verified per Table 1 in the official datasheet. This high breakdown voltage supports reliable operation under transient overvoltage conditions common in high-VSWR RF loads. The MRFX1K80H-64MHZ is rated for continuous operation up to 65 Vdc drain supply, with characterization validated from 30–65 Vdc for extended power range flexibility.
Does MRFX1K80H-64MHZ require external ESD protection on the gate terminals?
No, the MRFX1K80H-64MHZ integrates factory-qualified ESD protection meeting HBM Class 2 (2500 V) and CDM Class C3 (2000 V) standards, as confirmed in Table 3 of the datasheet. This eliminates the need for discrete gate protection diodes in typical PCB layouts. The MRFX1K80H-64MHZ also features an extended negative gate-source voltage range (–6.0 Vdc) to further enhance robustness during Class C switching transitions.
What is the thermal resistance (RθJC) of MRFX1K80H-64MHZ under CW conditions?
The MRFX1K80H-64MHZ exhibits a thermal resistance of 0.09 °C/W from junction to case under CW conditions (Table 2), measured at 99°C case temperature with 1800 W output at 98 MHz and 65 Vdc. This value is critical for heatsink sizing - for example, maintaining TJ ≤ 225°C requires a heatsink with RθCA ≤ 0.07 °C/W when ambient is 50°C. The MRFX1K80H-64MHZ's low RθJC enables compact thermal design in space-constrained RF cabinets.
Can MRFX1K80H-64MHZ be operated in push-pull configuration?
Yes, the MRFX1K80H-64MHZ is explicitly designed for both single-ended and push-pull operation, as stated in the "Features" section of the datasheet. Its symmetrical dual-gate/dual-drain structure (Pins 1–4) and matched electrical characteristics between sides A and B support balanced drive and cancellation of even-order harmonics. The MRFX1K80H-64MHZ reference circuits include verified push-pull layouts for 27 MHz and 87.5–108 MHz bands, confirming its suitability for high-linearity RF power stages.
Is MRFX1K80H-64MHZ supported by NXP's product longevity program?
Yes, the MRFX1K80H-64MHZ is included in NXP's product longevity program with assured supply for a minimum of 15 years after launch, as documented in the "Features" section. This commitment covers manufacturing continuity, no-unannounced obsolescence, and controlled change notifications - essential for aerospace, medical, and industrial OEMs with multi-decade system lifecycles. The MRFX1K80H-64MHZ revision history (Rev. 1, Sept. 2018) confirms ongoing support and documentation updates.
MRFX1K80H-64MHZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Type:
- Transistor
- Frequency:
- 64MHz
- Contents:
- Board(s)
- Utilized IC / Part:
- MRFX1K80H
MRFX1K80H-64MHZ FAQ
1.How can I place an order for MRFX1K80H-64MHZ through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFX1K80H-64MHZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFX1K80H-64MHZ reliable?
The price and inventory of MRFX1K80H-64MHZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFX1K80H-64MHZ is usually 5 days.
3.What payment methods are accepted for MRFX1K80H-64MHZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFX1K80H-64MHZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFX1K80H-64MHZ?
MRFX1K80H-64MHZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFX1K80H-64MHZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFX1K80H-64MHZ?
For technical support, including MRFX1K80H-64MHZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFX1K80H-64MHZ requirements.
6.How does Aetrix verify that MRFX1K80H-64MHZ is sourced from the original manufacturer or authorized distributors?
All MRFX1K80H-64MHZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFX1K80H-64MHZ meets industry standards.
7.What is the process for return or replacement of MRFX1K80H-64MHZ?
All MRFX1K80H-64MHZ units undergo pre-shipment inspection (PSI). If there is an issue with MRFX1K80H-64MHZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFX1K80H-64MHZ part is unused and in its original packaging.
Return procedure for MRFX1K80H-64MHZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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