NXP Semiconductors MRFX1K80H-81MHZ

Overview

MRFX1K80H-81MHZ from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor designed for broadband industrial and broadcast amplifiers operating from 1.8 to 400 MHz. It delivers 25.1 dB power gain, 75.1% drain efficiency, and >65:1 load mismatch tolerance at 230 MHz under pulsed conditions. Its dual-gate/dual-drain structure supports push-pull or single-ended configurations in MRI systems, plasma generators, and HF radar transmitters.

For engineers reviewing the MRFX1K80H-81MHZ datasheet, MRFX1K80H-81MHZ pinout, MRFX1K80H-81MHZ application, or MRFX1K80H-81MHZ equivalent, this page provides verified specifications, thermal impedance (0.017 °C/W pulsed), ruggedness test data (65 V, 14 W peak overdrive), and validated alternative options for high-VSWR RF power amplifier design.

Technical Context

The MRFX1K80H-81MHZ is a laterally diffused MOSFET with two independent gate-source-drain sections integrated into a single NI-1230H-4S over-molded plastic package. Its unmatched input/output impedance enables operation across 1.8–400 MHz without external tuning networks - confirmed by measured performance at 27 MHz, 81.36 MHz, 98 MHz, 175 MHz, and 230 MHz reference circuits.

It features integrated ESD protection (HBM Class 2, CDM Class C3), operates up to +225 °C junction temperature, and is characterized for 30–65 VDD operation. The device's 0.09 °C/W CW thermal resistance and 179 VDS breakdown voltage support high-reliability linear and Class C amplifier designs in demanding aerospace and medical RF systems.

Key Specifications

Pinout & Package

The MRFX1K80H-81MHZ is housed in an NI-1230H-4S over-molded plastic package with electrically isolated source (backside metal tab) and four surface-mount terminals: Gate A, Drain A, Gate B, Drain B. Thermal path is optimized via the source tab, requiring low-thermal-resistance mounting to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFX1K80N and MRF1K50H, the MRFX1K80H-81MHZ delivers superior power density (1800 W in plastic package), best-in-class ruggedness (>65:1 VSWR), and lowest thermal resistance among plastic-housed 1.8–400 MHz RF power transistors - making it the preferred choice for new industrial, medical, and broadcast amplifier designs requiring long-term supply assurance.

Availability

MRFX1K80H-81MHZ is available at Aetrix Electronics and suitable for MRI RF subsystems, plasma generator control units, and HF broadcast transmitters requiring stable component supply across 15+ year product lifecycles.

Supply support for MRFX1K80H-81MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN transistors for industrial, medical, and communications infrastructure.

The MRFX1K80H-81MHZ belongs to NXP's MRFX family of wideband RF power LDMOS transistors, engineered specifically for ruggedized, high-efficiency amplifiers in ISM, broadcast, and aerospace applications where reliability under extreme VSWR is non-negotiable.

FAQ

What is the maximum continuous drain voltage rating for MRFX1K80H-81MHZ?

The MRFX1K80H-81MHZ has a maximum drain-source voltage (V_DSS) rating of +179 Vdc, as specified in Table 1 of the official NXP datasheet (Rev. 1, Sept. 2018). This rating enables safe operation at 65 VDD with substantial headroom for transient voltage spikes encountered in high-VSWR environments such as plasma ignition or antenna detuning. The MRFX1K80H-81MHZ maintains this rating across its full operating temperature range (–40 °C to +225 °C junction).

Does MRFX1K80H-81MHZ require external gate protection diodes?

No, the MRFX1K80H-81MHZ integrates ESD protection meeting HBM Class 2 (2500 V) and CDM Class C3 (2000 V) standards, as documented in Table 3 of the NXP datasheet. Its gate-source voltage rating is –6.0 V to +10 Vdc, and the internal protection structure eliminates the need for discrete gate clamp diodes in standard RF amplifier layouts. However, proper PCB layout practices - including short gate traces and localized bypassing - remain essential to preserve this protection integrity in the MRFX1K80H-81MHZ.

Can MRFX1K80H-81MHZ operate at 81.36 MHz with full 1800 W CW output?

Yes, the MRFX1K80H-81MHZ is explicitly characterized at 81.36 MHz in the NXP datasheet (page 1, Typical Performance table), delivering 1800 W CW output at 62 VDD with 25.1 dB power gain and 78.7% drain efficiency. This performance was measured in a dedicated 81.36 MHz reference circuit and confirms full-rated power capability within the 1.8–400 MHz bandwidth. The MRFX1K80H-81MHZ achieves this without external matching, leveraging its unmatched input/output architecture.

What is the thermal impedance (Z_θJC) of MRFX1K80H-81MHZ under pulsed conditions?

The MRFX1K80H-81MHZ has a pulsed thermal impedance (Z_θJC) of 0.017 °C/W, measured at 230 MHz with 100 µsec pulse width and 20% duty cycle, case temperature of 65 °C, and 65 VDD (Table 2, Thermal Characteristics). This value reflects the device's exceptional transient thermal response - critical for radar and pulsed industrial heating applications. It is significantly lower than its CW thermal resistance (0.09 °C/W), confirming efficient heat extraction during short-duration high-power events in the MRFX1K80H-81MHZ.

Is MRFX1K80H-81MHZ pin-compatible with MRFX1K80N?

Yes, the MRFX1K80H-81MHZ and MRFX1K80N share identical pinout, terminal assignment, and mechanical footprint (NI-1230H-4S vs. NI-1230-4S), enabling direct PCB-level substitution. Both devices use Gate A, Drain A, Gate B, Drain B layout with backside source connection. However, MRFX1K80N uses a ceramic package with lower thermal resistance (0.075 °C/W), while MRFX1K80H-81MHZ uses over-molded plastic (0.09 °C/W). The MRFX1K80H-81MHZ is not a drop-in replacement for thermal or hermeticity-critical applications, but electrical and mechanical compatibility is confirmed.