NXP Semiconductors MRFX1K80H-88MHZ

Overview

MRFX1K80H-88MHZ from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor designed for broadband industrial, broadcast, and aerospace amplifiers operating from 1.8 to 400 MHz. It delivers 23.6 dB power gain and 82.5% drain efficiency at 87.5–108 MHz (CW), with unmatched input/output impedance enabling wideband matching in VHF transmitters and MRI RF power stages.

For engineers reviewing the MRFX1K80H-88MHZ datasheet, MRFX1K80H-88MHZ pinout, MRFX1K80H-88MHZ application, or MRFX1K80H-88MHZ equivalent, this page provides verified electrical specs, ruggedness validation at >65:1 VSWR, thermal resistance of 0.09 °C/W (CW), NI-1230H-4S package mapping, and two confirmed alternative LDMOS transistors for VHF broadcast and ISM systems.

Technical Context

The MRFX1K80H-88MHZ is a dual-gate, dual-drain enhancement-mode lateral MOSFET with integrated ESD protection (HBM Class 2, CDM Class C3) and rated for continuous operation up to +225 °C junction temperature. Its symmetrical structure supports both single-ended and push-pull configurations, with gate threshold voltage of 2.1–2.9 Vdc and zero-gate leakage <1 µAdc at 5 Vdc.

It features a low thermal resistance junction-to-case (0.09 °C/W under 1800 W CW at 99 °C case temperature) and is characterized across 30–65 VDD for extended bias flexibility. Load mismatch testing confirms no degradation at >65:1 VSWR with 14 W peak drive at 230 MHz - validating suitability for high-VSWR industrial heating and broadcast final stages.

Key Specifications

Pinout & Package

The MRFX1K80H-88MHZ is housed in the NI-1230H-4S over-molded plastic package with isolated source (backside metal tab), four external terminals, and industry-standard mounting interface. Thermal path is optimized via direct-source-to-heatsink contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFX1K80H-88MHZ, MRFE6VP61K25H offers proven LDMOS reliability at reduced power, while CGHV1F015D enables higher-frequency operation at the cost of increased design complexity and thermal sensitivity.

Availability

MRFX1K80H-88MHZ is available at Aetrix Electronics and suitable for industrial heating, FM broadcast transmitters, and MRI RF power systems requiring stable component supply over extended product lifecycles.

Supply support for MRFX1K80H-88MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in ruggedized LDMOS and GaN transistors for mission-critical infrastructure.

The MRFX1K80H-88MHZ belongs to NXP's MRFX family of wideband RF power transistors engineered for industrial, medical, and broadcast applications demanding high efficiency, extreme ruggedness, and long-term supply assurance.

FAQ

What is the maximum continuous drain voltage rating for MRFX1K80H-88MHZ?

The MRFX1K80H-88MHZ has a maximum drain-source voltage (VDSS) rating of +179 Vdc, with safe continuous operation up to 65 VDD in standard amplifier configurations. This rating supports high-efficiency Class AB and Class C operation while maintaining robust avalanche margin - critical for VSWR-tolerant designs in broadcast and plasma systems. The device is qualified for 65 VDD operation per its production test specifications.

Does MRFX1K80H-88MHZ support push-pull amplifier configurations?

Yes, MRFX1K80H-88MHZ supports both single-ended and push-pull configurations due to its dual-gate/dual-drain architecture. Pin 1 (Drain A) and Pin 3 (Drain B) serve as independent high-current outputs, while Pins 2 and 4 provide separate gate control. This enables balanced drive, improved harmonic suppression, and higher effective output power in push-pull topologies - validated in NXP reference circuits at 27 MHz and 87.5–108 MHz.

What is the thermal resistance (RθJC) of MRFX1K80H-88MHZ under CW conditions?

The MRFX1K80H-88MHZ has a thermal resistance (RθJC) of 0.09 °C/W under CW conditions: measured at TC = 99 °C, 1800 W output, 65 VDC, and IDQ(A+B) = 150 mA at 98 MHz. This value reflects the device's optimized thermal path through the backside source tab and is essential for heatsink sizing in high-power VHF amplifiers where thermal management directly impacts MTTF and reliability.

Is MRFX1K80H-88MHZ qualified for medical applications like MRI RF power stages?

Yes, MRFX1K80H-88MHZ is explicitly listed in NXP's typical applications for MRI RF power amplifiers, supporting frequencies from 64–128 MHz. Its 1800 W CW output, 23.5 dB gain at 123/128 MHz, and 225 °C maximum junction temperature meet the stability, linearity, and thermal demands of clinical MRI transmit chains - especially in air-cooled or conduction-cooled portable systems where reliability under continuous pulsing is critical.

What package type does MRFX1K80H-88MHZ use, and is it RoHS compliant?

MRFX1K80H-88MHZ uses the NI-1230H-4S over-molded plastic package with a copper base and isolated source tab. Per NXP documentation, it is RoHS compliant and halogen-free, meeting JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements. The package supports standard reflow soldering per AN1908 and is mechanically compatible with industry-standard RF heatsinks using M3 mounting screws.