NXP Semiconductors MRFX1K80H-VHFDHY

Overview

MRFX1K80H-VHFDHY from NXP Semiconductors is a high-ruggedness, 1800 W CW, 65 V RF power LDMOS transistor optimized for broadband industrial, broadcast, and aerospace applications from 1.8 to 400 MHz. It features dual-gate/dual-drain architecture, 179 V_DS breakdown voltage, and 0.09 °C/W thermal resistance (junction-to-case, CW), enabling robust operation under extreme VSWR conditions in plasma generators and HF radar transmitters.

For engineers reviewing the MRFX1K80H-VHFDHY datasheet, MRFX1K80H-VHFDHY pinout, MRFX1K80H-VHFDHY application, or MRFX1K80H-VHFDHY equivalent, key selection criteria include its 27.8 dB power gain at 27 MHz, 75.6% drain efficiency at 1800 W CW, >65:1 load mismatch tolerance at 230 MHz, and NI-1230H-4S over-molded plastic package with backside source connection.

Technical Context

The MRFX1K80H-VHFDHY is a laterally diffused MOSFET with enhancement-mode N-channel operation and integrated ESD protection rated to 2500 V HBM and 2000 V CDM. Its unmatched input/output design eliminates external matching networks across 1.8–400 MHz, supporting both single-ended and push-pull configurations.

Characterized from 30–65 V_DD, it delivers stable performance up to 225 °C junction temperature and supports Class AB, B, and C biasing. Thermal impedance is 0.017 °C/W (pulse, 100 µs/20% duty cycle), enabling high peak-power operation in pulsed radar and DVB-T Doherty amplifiers.

Key Specifications

Pinout & Package

The MRFX1K80H-VHFDHY uses the NI-1230H-4S over-molded plastic package (27.0 × 27.0 × 4.5 mm). The backside metal surface serves as the common source terminal. Pin 1 = Gate A, Pin 2 = Gate B, Pin 3 = Drain A, Pin 4 = Drain B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFX1K80H-VHFDHY, MRFE6VP61K25H trades 1.3 dB gain for +700 W peak capability and improved thermal margin, while MRF1K50H offers +0.7 dB gain at 27 MHz but sacrifices 300 W output - making MRFX1K80H-VHFDHY the optimal balance of power, gain, and ruggedness across 1.8–400 MHz.

Availability

MRFX1K80H-VHFDHY is available at Aetrix Electronics and suitable for industrial plasma generation, HF radar transmitters, VHF broadcast transmitters, and MRI RF power stages requiring stable component supply and long-term lifecycle assurance.

Supply support for MRFX1K80H-VHFDHY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN technologies for mission-critical infrastructure.

The MRFX1K80H-VHFDHY belongs to NXP's MRFX family of wideband RF power transistors, engineered specifically for rugged, high-efficiency amplification in industrial, medical, broadcast, and aerospace systems demanding 15+ year supply assurance.

FAQ

What is the maximum continuous drain-source voltage rating for MRFX1K80H-VHFDHY?

The MRFX1K80H-VHFDHY has a maximum drain-source voltage (V_DSS) rating of +179 Vdc, verified per Table 1 in the official NXP datasheet (Rev. 1, Sept. 2018). This rating applies under static conditions with V_GS = 0 Vdc and ID = 100 mAdc, providing substantial margin for transient suppression in high-VSWR antenna systems. Operation above this voltage risks irreversible device failure.

Does MRFX1K80H-VHFDHY support push-pull amplifier configurations?

Yes, MRFX1K80H-VHFDHY explicitly supports push-pull configurations, as confirmed in the "Features" section of the NXP datasheet. Its dual-gate (Pins 1 & 2) and dual-drain (Pins 3 & 4) architecture allows independent drive and output combining. Application circuits on pages 6–7 and 12–13 of the datasheet demonstrate functional push-pull layouts using external baluns and combiners for 3600 W total output.

What thermal resistance value applies to MRFX1K80H-VHFDHY under continuous-wave operation?

Under continuous-wave (CW) operation at 1800 W, 65 Vdc, and 99 °C case temperature, the MRFX1K80H-VHFDHY exhibits a thermal resistance (R_θJC) of 0.09 °C/W, as specified in Table 2 of the NXP datasheet. This value is measured with IDQ(A+B) = 150 mA at 98 MHz and defines the steady-state junction-to-case temperature rise, directly informing heatsink sizing for sustained 1800 W output.

Can MRFX1K80H-VHFDHY be used in Doherty amplifier topologies?

Yes, MRFX1K80H-VHFDHY is qualified for Doherty operation, with documented performance at 174–230 MHz using DVB-T (8k OFDM) signals: 250 W average output, 21.3 dB power gain, and 43.3% drain efficiency. The datasheet confirms suitability for linear applications with appropriate biasing, and its dual-gate/dual-drain structure enables discrete carrier/peaking path implementation without signal splitting losses.

What is the gate-source leakage current specification for MRFX1K80H-VHFDHY at room temperature?

At T_A = 25 °C, the MRFX1K80H-VHFDHY specifies a maximum gate-source leakage current (I_GSS) of 1 µAdc when V_GS = 5 Vdc and V_DS = 0 Vdc, per Table 4 of the NXP datasheet. This low leakage ensures stable DC biasing and minimal quiescent current drift in high-gain RF amplifier stages operating across industrial temperature ranges.