NXP Semiconductors MRFX1K80N-230MHZ

Overview

MRFX1K80N-230MHZ from NXP Semiconductors is a high-ruggedness, 65 V, 1800 W peak RF power LDMOS transistor optimized for narrowband 230 MHz pulsed operation in industrial and broadcast amplifiers. It delivers 24.4 dB power gain and 75.7% drain efficiency at 100 µs pulse width and 20% duty cycle, with >65:1 load VSWR tolerance under overdrive. Used in MRI RF ablation and plasma generation systems requiring robust wide-VSWR performance.

For engineers reviewing the MRFX1K80N-230MHZ datasheet, MRFX1K80N-230MHZ pinout, MRFX1K80N-230MHZ application, or MRFX1K80N-230MHZ equivalent, key selection criteria include 230 MHz narrowband ruggedness validation, dual-gate/dual-drain thermal impedance (0.009 °C/W), 179 V drain-source breakdown, ESD Class 2 HBM/Class C3 CDM rating, and compatibility with 65 V DC supply rails in high-reliability RF power stages.

Technical Context

This device is a dual-channel enhancement-mode lateral MOSFET with independent Gate A/Gate B and Drain A/Drain B terminals, enabling single-ended or push-pull configurations. Its unmatched input/output design eliminates external matching networks at 230 MHz, and integrated ESD protection supports Class C biasing with extended negative gate-source voltage range.

Thermal architecture features low junction-to-case thermal impedance (0.009 °C/W pulsed) and 225 °C maximum junction temperature, validated under 65 V, 1800 W peak conditions at 230 MHz. Ruggedness testing confirms no degradation at >65:1 VSWR with 14 W peak input and 3 dB overdrive.

Key Specifications

Pinout & Package

MRFX1K80N-230MHZ uses the OM-1230-4L plastic over-molded package with exposed source pad on the backside. Thermal path is optimized via direct die-to-case conduction through the source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF1K50N and MRFE6VP61K25N, MRFX1K80N-230MHZ uniquely combines 1800 W peak output, 24.4 dB gain, 75.7% efficiency, and >65:1 VSWR tolerance-all validated at 230 MHz-making it the optimal choice for mission-critical narrowband industrial RF systems demanding proven reliability.

Availability

MRFX1K80N-230MHZ is available at Aetrix Electronics and suitable for RF ablation systems, industrial plasma generators, and broadcast transmitter final stages requiring stable component supply across multi-year production cycles.

Supply support for MRFX1K80N-230MHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in RF power technology.

The MRFX1K80N-230MHZ belongs to NXP's high-ruggedness RF LDMOS transistor family, engineered specifically for industrial, medical, and broadcast applications demanding extreme VSWR tolerance and long-term reliability at fixed frequencies like 230 MHz.

FAQ

What is the maximum drain-source voltage rating for MRFX1K80N-230MHZ?

The MRFX1K80N-230MHZ has a maximum drain-source voltage (V_DSS) rating of +179 Vdc, providing substantial margin above its 65 Vdc operating supply. This rating ensures robustness against voltage transients in high-power RF amplifier circuits and is validated per Table 1 in the official NXP datasheet Rev. 0 (April 2018). The MRFX1K80N-230MHZ maintains safe operation even under reactive load conditions that induce voltage overshoot.

Does MRFX1K80N-230MHZ support push-pull amplifier configurations?

Yes, MRFX1K80N-230MHZ supports push-pull operation due to its dual independent gate (Gate A/Gate B) and drain (Drain A/Drain B) structure. Each channel is electrically isolated and characterized separately, enabling balanced drive and symmetrical power combining. The MRFX1K80N-230MHZ datasheet explicitly states this capability in the Features section and validates performance in both single-ended and push-pull modes across its 1.8–400 MHz bandwidth.

What thermal performance metrics are specified for MRFX1K80N-230MHZ at 230 MHz?

At 230 MHz, MRFX1K80N-230MHZ is characterized with a thermal impedance (Z_θJC) of 0.009 °C/W under pulsed conditions (100 µs, 20% duty cycle, 1800 W peak, T_C = 77 °C). This value reflects its optimized thermal path from junction to case via the exposed source pad. The MRFX1K80N-230MHZ also specifies a maximum junction temperature of +225 °C, enabling high-power operation in thermally constrained industrial enclosures.

Is MRFX1K80N-230MHZ qualified for medical applications such as RF ablation?

Yes, MRFX1K80N-230MHZ is explicitly cited in NXP's Typical Applications for MRI, RF ablation, and skin treatment systems. Its >65:1 VSWR ruggedness at 230 MHz ensures uninterrupted operation during dynamic tissue impedance shifts, and its 15-year product longevity program supports regulatory-compliant medical device lifecycles. The MRFX1K80N-230MHZ meets moisture sensitivity level 3 (MSL-3) per J-STD-020, qualifying it for standard surface-mount assembly processes used in certified medical electronics.

What is the gate threshold voltage range for MRFX1K80N-230MHZ?

The gate threshold voltage (V_GS(th)) for MRFX1K80N-230MHZ is specified as 2.1–2.9 Vdc at V_DS = 10 Vdc and I_D = 740 µAdc (Table 5, page 2). This tightly controlled range ensures consistent turn-on behavior across units and simplifies bias network design for Class AB or Class C operation. The MRFX1K80N-230MHZ also specifies a gate quiescent voltage (V_GS(Q)) of 2.5–3.3 Vdc under functional test conditions (65 Vdc, I_DQ(A+B) = 100 mA), directly supporting stable idle current setting.