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NXP Semiconductors MRFX600GSR5
- Part No.:
- MRFX600GSR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780GS-4L
- Datasheet:
-
MRFX600GSR5.pdf
- Description:
- RF MOSFET LDMOS 65V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:48
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Product details
Overview
MRFX600GSR5 from NXP Semiconductors is a high-ruggedness, 600 W peak, 65 V LDMOS RF power transistor designed for broadband industrial and broadcast amplifiers operating from 1.8 to 400 MHz. It features dual-gate/dual-drain architecture, 230 MHz pulse-tested performance (26.4 dB gain, 74.4% drain efficiency), and >65:1 load VSWR ruggedness at 230 MHz with no degradation under 3 dB overdrive.
For engineers reviewing the MRFX600GSR5 datasheet, MRFX600GSR5 pinout, MRFX600GSR5 application, or MRFX600GSR5 equivalent, this page delivers verified electrical specs, thermal metrics, ruggedness validation, package mapping to NI-780GS-4L, and real-world use context for HF/VHF RF power amplifier design.
Technical Context
The MRFX600GSR5 is a laterally diffused MOSFET with enhancement-mode N-channel operation, qualified for continuous 65 VDD operation and characterized from 30–65 V for extended power range. Its unmatched input/output enables direct integration into broadband matching networks without external impedance transformation for 87.5–108 MHz and 230 MHz reference circuits.
Thermal design is enabled by low junction-to-case thermal resistance (0.15 °C/W CW, 0.037 °C/W pulse) and a rated junction temperature up to +225 °C. Integrated ESD protection meets HBM Class 2 (2500 V) and CDM Class C3 (1000 V), supporting robust Class C and linear biasing schemes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–400 MHz - supports single device deployment across HF, VHF, and UHF industrial and broadcast bands without retuning. |
| Output Power | 600 W peak @ 230 MHz - enables high-power pulsed radar and PMR base station final stages with minimal device count. |
| Power Gain | 26.4 dB typical @ 230 MHz - reduces driver stage complexity and improves system-level efficiency in multi-stage amplifiers. |
| Drain Efficiency | 74.4% typical @ 230 MHz - lowers thermal load and heatsink requirements in air-cooled industrial RF systems. |
| VSWR Ruggedness | >65:1 @ 230 MHz - eliminates need for circulators or VSWR protection circuitry in mismatch-prone plasma and MRI applications. |
| Junction Temp | +225 °C max - allows operation in sealed enclosures or high-ambient environments such as RF heating chambers. |
| ESD Rating | HBM Class 2 (2500 V), CDM Class C3 (1000 V) - ensures handling robustness during PCB assembly and field service. |
Pinout & Package
The MRFX600GSR5 is housed in the NI-780GS-4L gull-wing surface-mount package with exposed backside source terminal. The package uses straight lead configuration before gull-wing forming and is optimized for high-frequency thermal and RF performance in air-cavity mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A (Pin 1) | RF Power Output Terminal A | Carries half the total RF output current; requires symmetric layout and thermal path to heatsink. |
| Gate A (Pin 2) | Control Input Terminal A | Bias and drive node for first transistor half; must be decoupled with low-inductance capacitors per reference design. |
| Gate B (Pin 3) | Control Input Terminal B | Independent gate for push-pull or balanced operation; matched layout critical for phase balance. |
| Drain B (Pin 4) | RF Power Output Terminal B | Carries complementary RF output current; paired with Drain A for differential or parallel configurations. |
| Backside | Source Terminal (Common) | Electrically and thermally connected to heatsink; forms primary thermal conduction path and RF return. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate/dual-drain architecture | Enables push-pull, parallel, or balanced amplifier topologies without external combining networks. |
| Unmatched 1.8–400 MHz operation | Eliminates need for frequency-specific matching components, reducing BOM count and tuning time. |
| Output impedance compatible with 4:1 transformer | Simplifies broadband output matching using standard ferrite-core transformers in ISM and broadcast designs. |
| 65 V maximum drain voltage rating | Supports higher supply headroom for improved linearity and transient margin in demanding RF ablation and radar systems. |
| Included in NXP Product Longevity Program | Guaranteed minimum 15-year supply continuity-critical for medical equipment and infrastructure OEMs. |
Applications
| Laser Generation | Plasma Generation |
|---|---|
Use Scenario: High-power RF excitation of CO₂ or fiber lasers requiring stable 100–300 W average output. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering CW or modulated RF energy to laser discharge tubes. Use Value: 83.0% drain efficiency at 98 MHz reduces cooling demands and improves laser wall-plug efficiency. | Use Scenario: RF-driven plasma sources for semiconductor etching, surface treatment, and thin-film deposition. IC Role / Device Role / Timing Role: High-current RF switch driving resonant plasma chamber loads with dynamic impedance shifts. Use Value: >65:1 VSWR ruggedness prevents failure during plasma ignition transients and arc events. |
| HF Communications Radar | PMR Base Stations |
Use Scenario: Solid-state transmitter modules for airborne or ground-based HF surveillance radar operating at 3–30 MHz. IC Role / Device Role / Timing Role: High-efficiency pulsed RF amplifier generating 600 W peak pulses at 230 MHz test frequency. Use Value: 74.4% drain efficiency and 0.037 °C/W thermal impedance enable compact, air-cooled radar front-ends. | Use Scenario: Multi-carrier RF power amplification in professional mobile radio base stations covering 136–174 MHz. IC Role / Device Role / Timing Role: Linearized final-stage amplifier supporting P25 and DMR modulation with low adjacent channel leakage. Use Value: 21.3 dB gain at 98 MHz simplifies driver stage design while maintaining spectral purity under wideband modulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFX600HSR5 | Same die, NI-780S-4L package with straight leads (not gull-wing); 32 mm tape width. | Preferred for wave-soldered or through-hole-compatible hybrid assemblies; lower profile than GS variant. | Select when board assembly uses reflow-compatible gull-wing leads is not required and mechanical clearance favors flat leads. |
| MRFX600HR5 | Same die, NI-780H-4L package with straight leads; 56 mm tape width; rated for same 65 VDD and 230 MHz performance. | Optimized for high-volume automated placement with wider tape; identical RF specs but different thermal mounting interface. | Choose for production lines using standard 56 mm carrier tape and where backside thermal attachment matches NI-780H-4L footprint. |
Compared with MRFX600HSR5 and MRFX600HR5, the MRFX600GSR5 provides identical RF and thermal performance but differs in lead form (gull-wing), tape width (NI-780GS-4L), and mechanical mounting compatibility-making it the preferred choice for surface-mount reflow processes requiring controlled standoff and coplanarity.
Availability
MRFX600GSR5 is available at Aetrix Electronics and suitable for industrial heating, RF ablation, broadcast transmission, and aerospace radar applications requiring stable component supply and long-term lifecycle assurance.
Supply support for MRFX600GSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN technologies for mission-critical industrial and communications infrastructure.
The MRFX600GSR5 belongs to NXP's Wideband RF Power LDMOS family, engineered specifically for rugged, high-efficiency amplification in mismatch-prone environments such as plasma generation, MRI, and HF/VHF broadcast.
FAQ
What is the maximum continuous drain voltage rating for MRFX600GSR5?
The MRFX600GSR5 has a maximum drain-source voltage (VDSS) rating of +179 Vdc, with operational qualification up to 65 VDD for RF power amplification. This high breakdown voltage supports enhanced reliability in transient-rich environments like RF plasma ignition and radar pulse compression, and is confirmed in Table 1 of the official NXP datasheet (Rev. 0, Sept. 2018).
Does MRFX600GSR5 support push-pull amplifier configurations?
Yes, the MRFX600GSR5 is explicitly designed for push-pull operation, as stated in its Features section. Its dual-gate (Gate A/Gate B) and dual-drain (Drain A/Drain B) architecture enables balanced configurations without external combiners, and its matched characteristics across both sides support phase coherence in HF/VHF transmitter designs.
What thermal resistance value applies to MRFX600GSR5 under continuous-wave operation?
Under CW conditions (650 W, 62 Vdc, 98 MHz, TC = 75 °C), the MRFX600GSR5 exhibits a junction-to-case thermal resistance (RθJC) of 0.15 °C/W, as specified in Table 2 of the NXP datasheet. This value is measured on the NI-780GS-4L package and is critical for heatsink sizing in industrial RF heating and broadcast amplifier applications.
Is MRFX600GSR5 suitable for linear RF amplifier applications?
Yes, the MRFX600GSR5 is suitable for linear applications when properly biased, as confirmed in the Features section ("Suitable for linear application with appropriate biasing"). Its high gain flatness across 87.5–108 MHz and low distortion characteristics-evidenced by –27 dBc second harmonic at 87.5 MHz-support P25, DMR, and other linear modulation schemes in PMR base stations.
What is the ESD protection level of MRFX600GSR5?
The MRFX600GSR5 meets Human Body Model (HBM) Class 2 (2500 V) and Charge Device Model (CDM) Class C3 (1000 V) ESD standards, as documented in Table 3 of the NXP datasheet. This integrated protection supports robust handling during SMT assembly and field maintenance without requiring additional external clamping in most RF power amplifier layouts.
MRFX600GSR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780GS-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.8MHz ~ 400MHz
- Gain:
- 26.4dB
- Voltage - Test:
- 65 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 600W
- Voltage - Rated:
- 179 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780GS-4L
MRFX600GSR5 FAQ
1.How can I place an order for MRFX600GSR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRFX600GSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRFX600GSR5 reliable?
The price and inventory of MRFX600GSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRFX600GSR5 is usually 5 days.
3.What payment methods are accepted for MRFX600GSR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRFX600GSR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRFX600GSR5?
MRFX600GSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRFX600GSR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRFX600GSR5?
For technical support, including MRFX600GSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRFX600GSR5 requirements.
6.How does Aetrix verify that MRFX600GSR5 is sourced from the original manufacturer or authorized distributors?
All MRFX600GSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRFX600GSR5 meets industry standards.
7.What is the process for return or replacement of MRFX600GSR5?
All MRFX600GSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRFX600GSR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRFX600GSR5 part is unused and in its original packaging.
Return procedure for MRFX600GSR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRFX600GSR5 Tags
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