NXP Semiconductors MRFX600HSR5

Overview

MRFX600HSR5 from NXP Semiconductors is a high-ruggedness, 600 W peak, 65 V drain-source voltage, N-channel enhancement-mode LDMOS RF power transistor designed for broadband industrial and broadcast amplifiers operating from 1.8 to 400 MHz. It delivers 26.4 dB power gain and 74.4% drain efficiency at 230 MHz under pulsed conditions (100 µs, 20% duty cycle), with proven >65:1 load VSWR tolerance. It is used in MRI RF ablation systems requiring robust wideband RF power delivery.

For engineers reviewing the MRFX600HSR5 datasheet, MRFX600HSR5 pinout, MRFX600HSR5 application, or MRFX600HSR5 equivalent, this page provides verified electrical specifications, thermal impedance data (0.037 °C/W pulsed), ruggedness test results, package mechanical details (NI-780S-4L), and validated alternative transistors for HF/VHF RF amplifier design.

Technical Context

This dual-gate, dual-drain LDMOS device operates in Class AB or Class C configurations with gate threshold voltage of 2.1–2.9 V and zero-gate leakage <10 µA at 65 VDS. Its unmatched input/output architecture supports direct integration into 4:1 transformer-coupled output stages without external matching networks across 87.5–108 MHz and 230 MHz bands.

Thermal performance is defined by junction-to-case thermal impedance of 0.037 °C/W (pulsed) and 0.15 °C/W (CW), enabling stable operation up to +225 °C junction temperature. ESD protection meets HBM Class 2 (2500 V) and CDM Class C3 (1000 V), supporting reliable handling in production environments.

Key Specifications

Pinout & Package

The MRFX600HSR5 is housed in the NI-780S-4L air-cavity ceramic/metal package with gull-wing leads, optimized for high-frequency thermal and RF performance. The backside metal serves as the common source terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFX600HSR5, MRFX600H offers identical RF performance but requires through-hole or modified SMT placement due to straight leads, while MRFX600GS matches the gull-wing form factor but ships on a narrower 32 mm tape - both are functionally interchangeable in circuit design but differ in mechanical integration and procurement logistics.

Availability

MRFX600HSR5 is available at Aetrix Electronics and suitable for industrial heating systems, MRI ablation equipment, and HF broadcast transmitters requiring stable component supply over multi-year production cycles.

Supply support for MRFX600HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communication markets, with deep expertise in RF power technology.

The MRFX600HSR5 belongs to NXP's high-ruggedness LDMOS RF transistor family, engineered specifically for mission-critical broadband RF amplification in industrial, medical, and broadcast infrastructure where reliability under extreme VSWR and thermal stress is mandatory.

FAQ

What is the maximum continuous drain current rating for MRFX600HSR5?

The MRFX600HSR5 does not specify a maximum continuous drain current (I_D) rating in its datasheet. Instead, it defines safe operating limits via total device dissipation (1333 W at T_C = 25 °C), junction temperature (–40 to +225 °C), and thermal resistance (0.15 °C/W CW). Designers must calculate actual I_D based on applied V_DS, duty cycle, and thermal management - for example, at 62 V and 680 W CW, average I_D ≈ 10.97 A, but instantaneous peak current depends on modulation profile. The MRFX600HSR5 is rated for pulsed operation up to 600 W peak with 100 µs pulse width and 20% duty cycle.

Does MRFX600HSR5 support push-pull configuration?

Yes, MRFX600HSR5 explicitly supports push-pull configuration as stated in its official features list. Its dual-gate/dual-drain structure (Gate A/Drain A and Gate B/Drain B) enables true balanced operation with symmetrical drive signals. The device's unmatched input/output design and 4:1 output impedance ratio are optimized for transformer-coupled push-pull stages. Application circuits in the datasheet confirm use in broadband reference designs with balanced input and output matching networks - making MRFX600HSR5 suitable for high-efficiency, low-distortion RF amplifiers where even-order harmonic suppression is required.

What is the gate threshold voltage range for MRFX600HSR5?

The gate threshold voltage (V_GS(th)) for MRFX600HSR5 is specified as 2.1–2.9 V at V_DS = 10 V and I_D = 277 µA, per Table 4 of the datasheet. This range reflects process variation across production lots and ensures consistent turn-on behavior across temperature and voltage conditions. The quiescent gate voltage (V_GS(Q)) under functional test conditions (V_DD = 65 V, I_DQ(A+B) = 100 mA) is 2.7–3.2 V - a practical bias point for Class AB operation. These values are measured per-side, confirming matched characteristics between Gate A and Gate B in the MRFX600HSR5.

Can MRFX600HSR5 be used in Class C amplifier designs?

Yes, MRFX600HSR5 is qualified for Class C operation, as confirmed by its integrated ESD protection enabling extended negative gate-source voltage swing (–6.0 V) and its characterization across 30–65 V drain supply range. The datasheet explicitly states suitability for linear applications "with appropriate biasing" and highlights enhanced negative V_GS range for improved Class C operation. Its high breakdown voltage (179 V min), low output capacitance (C_oss = 84 pF), and ruggedness (>65:1 VSWR survival) make MRFX600HSR5 well-suited for high-efficiency, narrowband Class C RF power amplifiers in HF communications and radar transmitters.

What is the thermal resistance junction-to-case for MRFX600HSR5 in CW operation?

The thermal resistance junction-to-case (R_θJC) for MRFX600HSR5 in continuous wave (CW) operation is 0.15 °C/W, measured at case temperature 75 °C, 650 W CW output, 62 V_DC, and I_DQ(A+B) = 250 mA at 98 MHz - as specified in Table 2 of the datasheet. This value applies to the NI-780S-4L package under standardized test conditions and is critical for heatsink sizing in CW applications such as FM broadcast transmitters. For pulsed operation (100 µs, 20% duty cycle), the thermal impedance drops to 0.037 °C/W, reflecting lower average power dissipation and reduced thermal time constant effects in the MRFX600HSR5.