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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MSA1162GT1

Name: MSA1162GT1
Brand: onsemi
SKU: MSA1162GT1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MSA1162GT1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MSA1162GT1.pdf

Description:: TRANS PNP 50V 0.1A SC-59

Quantity:: RFQ Add To RFQ list

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Inventory:280,050

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Product details

Overview

MSA1162GT1 from onsemi is a PNP general-purpose bipolar junction transistor in SC-59 (SOT-23) package, rated for V_(BR)CEO = 50 V, I_C = 100 mA continuous, and f_T = 80 MHz, used in low-power signal amplification and switching circuits in consumer audio preamps and sensor interface stages.

For engineers reviewing the MSA1162GT1 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, 200–400 h_FE range at 2 mA, V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, and Pb-free SC-59 footprint compatibility with space-constrained analog front-ends.

Technical Context

This device operates as a single PNP BJT optimized for linear amplification and saturated switching in low-voltage DC-coupled stages. Its 80 MHz f_T supports audio-band gain stability, while the 50 V V_(BR)CEO and 150 °C T_J rating enable robustness in battery-powered industrial sensors and portable equipment.

Designed for surface-mount assembly, the MSA1162GT1 uses a fixed-emitter configuration with base control, requiring external bias networks for Class-A amplification or digital logic-level switching. Its low I_CBO (≤0.1 µA) and tight h_FE distribution support predictable gain matching in discrete amplifier arrays.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CEO	50 V - Maximum collector-emitter voltage before breakdown under open-base conditions; sets safe operating voltage ceiling for 3.3 V/5 V rail applications.
I_C (continuous)	100 mA - Continuous collector current limit; defines max load drive capability in active-region amplifiers or saturated switches.
h_FE	200–400 - DC current gain at V_CE = 6 V, I_C = 2 mA; enables stable biasing with minimal base drive current in low-noise preamp stages.
f_T	80 MHz - Transition frequency at I_C = 1 mA, V_CE = 10 V; ensures usable gain up to mid-audio frequencies without phase inversion.
V_CE(sat)	≤0.5 V - Saturation voltage at I_C = 100 mA, I_B = 10 mA; minimizes power loss and heating in high-duty-cycle switching nodes.
P_D	200 mW - Maximum power dissipation at T_A = 25 °C; constrains thermal design for PCBs without heatsinking in compact enclosures.

Pinout & Package

Package: SC-59 (SOT-23), 3-pin surface-mount plastic case per CASE 318D, dimensions 2.90 × 1.50 × 1.15 mm, pitch 1.90 mm, moisture sensitivity level 1, Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires external resistor bias network to set operating point in active or saturation region.
2	Emitter	Common terminal for PNP topology; connected to higher potential rail (e.g., V_CC) in common-emitter configurations.
3	Collector	Output terminal carrying amplified/saturated current; tied to load or next stage input with appropriate pull-up/pull-down.

Key Features

Feature	Design Value
Pb-free construction	RoHS-compliant packaging with no lead content; meets global environmental regulations for consumer and industrial electronics.
Moisture Sensitivity Level 1	Unlimited floor life before reflow; eliminates baking requirements and simplifies SMT line handling for high-volume production.
High h_FE consistency	200–400 range at standard test conditions; reduces need for individual gain trimming in multi-channel analog signal paths.
Low V_CE(sat)	≤0.5 V at I_C/I_B = 10; improves efficiency in battery-operated switch-mode regulators and LED drivers.

Applications

Audio Pre-amplifier Stage	Sensor Signal Conditioning
Use Scenario: Amplifying weak microphone or piezoelectric sensor outputs in portable voice recorders. IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology for voltage gain with DC coupling. Use Value: 80 MHz f_T preserves full audio bandwidth (20 Hz–20 kHz), while 200–400 h_FE ensures stable gain without feedback complexity.	Use Scenario: Converting low-current output from NTC thermistors or photodiodes into usable voltage levels. IC Role / Device Role / Timing Role: Transconductance amplifier stage with emitter-follower bias for high input impedance and low output impedance. Use Value: Low I_CBO (≤0.1 µA) prevents leakage-induced offset drift across temperature, critical for <±0.5 °C measurement accuracy.
LED Driver Switch	Logic-Level Interface
Use Scenario: Driving indicator LEDs from 3.3 V microcontroller GPIO pins in IoT edge nodes. IC Role / Device Role / Timing Role: Saturated PNP switch sinking current from V_CC through LED to ground. Use Value: V_CE(sat) ≤ 0.5 V limits power dissipation to <50 mW at 100 mA, enabling reliable operation without thermal derating.	Use Scenario: Level-shifting between 1.8 V FPGA I/O and 5 V legacy peripherals in industrial gateways. IC Role / Device Role / Timing Role: Inverting voltage translator using fixed-bias common-emitter configuration. Use Value: 50 V V_(BR)CEO provides margin against transient spikes during hot-plug events, improving system ESD resilience.

Audio Pre-amplifier Stage

Sensor Signal Conditioning

Use Scenario: Amplifying weak microphone or piezoelectric sensor outputs in portable voice recorders.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology for voltage gain with DC coupling.

Use Value: 80 MHz f_T preserves full audio bandwidth (20 Hz–20 kHz), while 200–400 h_FE ensures stable gain without feedback complexity.

Use Scenario: Converting low-current output from NTC thermistors or photodiodes into usable voltage levels.

IC Role / Device Role / Timing Role: Transconductance amplifier stage with emitter-follower bias for high input impedance and low output impedance.

Use Value: Low I_CBO (≤0.1 µA) prevents leakage-induced offset drift across temperature, critical for <±0.5 °C measurement accuracy.

LED Driver Switch

Logic-Level Interface

Use Scenario: Driving indicator LEDs from 3.3 V microcontroller GPIO pins in IoT edge nodes.

IC Role / Device Role / Timing Role: Saturated PNP switch sinking current from V_CC through LED to ground.

Use Value: V_CE(sat) ≤ 0.5 V limits power dissipation to <50 mW at 100 mA, enabling reliable operation without thermal derating.

Use Scenario: Level-shifting between 1.8 V FPGA I/O and 5 V legacy peripherals in industrial gateways.

IC Role / Device Role / Timing Role: Inverting voltage translator using fixed-bias common-emitter configuration.

Use Value: 50 V V_(BR)CEO provides margin against transient spikes during hot-plug events, improving system ESD resilience.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT4403LT1G	V_(BR)CEO = 40 V (vs. 50 V); h_FE = 100–300 (vs. 200–400); same SC-59 package.	Lower breakdown voltage limits use in >40 V supply rails; narrower h_FE range may require tighter bias tolerance.	Select when cost sensitivity outweighs voltage headroom needs and gain spread is acceptable.
PN2907A	TO-92 through-hole package; V_(BR)CEO = 60 V; h_FE = 100–300; not surface-mount.	Requires manual or wave soldering; incompatible with automated SMT lines; larger board footprint.	Choose only for prototyping or legacy repair where SC-59 footprint is unavailable.

Compared with MSA1162GT1, MMBT4403LT1G offers lower cost but reduced voltage margin and gain consistency, while PN2907A provides higher breakdown rating at the expense of manufacturability and miniaturization-making MSA1162GT1 optimal for volume SMT designs needing balanced performance and reliability.

Availability

MSA1162GT1 is available at Aetrix Electronics and suitable for audio pre-amplifier stages, sensor signal conditioning, LED driver switches, and logic-level interfaces requiring stable component supply across industrial, medical, and consumer electronics programs.

Supply support for MSA1162GT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MSA1162GT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-reliability discrete amplification and switching in space-constrained, low-power electronic systems.

FAQ

What is the maximum operating temperature for the MSA1162GT1?

The MSA1162GT1 has a maximum junction temperature (T_J) of 150 °C and a storage temperature range of −55 °C to +150 °C. This allows reliable operation in ambient environments up to approximately 125 °C when properly derated per its 200 mW power dissipation limit and thermal resistance characteristics. The MSA1162GT1 must be mounted on PCBs with adequate copper area to maintain T_J within spec under full load.

Does the MSA1162GT1 support Pb-free reflow soldering?

Yes, the MSA1162GT1 is explicitly marked as Pb-free in its ordering code (suffix "G") and complies with JEDEC J-STD-020 moisture sensitivity level 1. It supports standard lead-free reflow profiles (e.g., peak temperature ≤ 260 °C) without preconditioning, making it compatible with high-throughput SMT assembly lines.

What is the typical DC current gain (hFE) of the MSA1162GT1 at 10 mA collector current?

The MSA1162GT1 datasheet specifies h_FE = 200–400 at I_C = 2 mA, V_CE = 6 V. At I_C = 10 mA, Figure 2 shows h_FE ≈ 150–250 depending on temperature-lower than at 2 mA due to early effect. Designers should verify bias stability across this range when using the MSA1162GT1 in linear amplifier applications.

Can the MSA1162GT1 replace an NPN transistor in the same circuit?

No-the MSA1162GT1 is a PNP transistor and cannot directly replace an NPN device without reversing supply polarity and redesigning bias networks. Its pinout (Base–Emitter–Collector on pins 1–2–3) and current flow direction (emitter to collector) are fundamentally opposite to NPN types like the MMBT2222A. Substitution would require full schematic revision.

Is the MSA1162GT1 suitable for RF applications above 10 MHz?

The MSA1162GT1 has an f_T of 80 MHz, indicating usable gain up to ~10–20 MHz in practical common-emitter configurations. While it can operate in narrowband RF front-ends below 30 MHz (e.g., AM receiver IF stages), it lacks specified noise figure, S-parameters, or matching networks-so it is not recommended for intentional RF transmission or high-selectivity tuned circuits where dedicated RF transistors are specified.

MSA1162GT1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 80MHz

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

MSA1162GT1 FAQ

1.How can I place an order for MSA1162GT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MSA1162GT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSA1162GT1 reliable?

The price and inventory of MSA1162GT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSA1162GT1 is usually 5 days.

3.What payment methods are accepted for MSA1162GT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSA1162GT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSA1162GT1?

MSA1162GT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSA1162GT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSA1162GT1?

For technical support, including MSA1162GT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSA1162GT1 requirements.

6.How does Aetrix verify that MSA1162GT1 is sourced from the original manufacturer or authorized distributors?

All MSA1162GT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSA1162GT1 meets industry standards.

7.What is the process for return or replacement of MSA1162GT1?

All MSA1162GT1 units undergo pre-shipment inspection (PSI). If there is an issue with MSA1162GT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSA1162GT1 part is unused and in its original packaging.

Return procedure for MSA1162GT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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