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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MSA1162YT1G

Name: MSA1162YT1G
Brand: onsemi
SKU: MSA1162YT1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MSA1162YT1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MSA1162YT1G.pdf

Description:: TRANS PNP 50V 0.1A SC-59

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MSA1162YT1G from onsemi is a PNP general-purpose bipolar junction transistor in SC-59 (SOT-23) package, rated for 50 V V_(BR)CEO, 100 mA I_C, and 200 mW P_D; it delivers h_FE = 200–400 at I_C = 2 mA and f_T = 80 MHz, used in low-power signal amplification and switching circuits in portable audio and sensor interface stages.

For engineers reviewing the MSA1162YT1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SC-59 package compatibility, guaranteed h_FE range, V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, and thermal rating up to 150°C junction temperature.

Technical Context

This device operates as a medium-speed, low-current PNP BJT optimized for linear amplification and saturated switching in battery-powered analog front-ends. Its f_T = 80 MHz supports audio-band gain stability, while V_(BR)EBO = 7.0 V ensures robust base-emitter reverse bias tolerance in common-emitter configurations.

Designed for surface-mount assembly with moisture sensitivity level 1 (MSL-1), the MSA1162YT1G features Pb-free construction and meets JEDEC J-STD-020 requirements. Its SC-59 footprint enables high-density PCB layouts without thermal derating below 25°C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CEO	50 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage in amplifier and switch applications.
I_C (continuous)	100 mA - Continuous collector current limit; sets maximum load drive capability in active-region amplification or saturation-mode switching.
h_FE	200–400 - DC current gain at V_CE = 6 V, I_C = 2 mA; determines base drive requirement and small-signal transconductance.
f_T	80 MHz - Transition frequency at I_C = 1 mA, V_CE = 10 V; indicates usable bandwidth for audio and low-RF signal amplification.
V_CE(sat)	≤ 0.5 V - Collector-emitter saturation voltage at I_C = 100 mA, I_B = 10 mA; defines conduction loss and power dissipation in switching mode.
P_D	200 mW - Maximum power dissipation at T_A = 25°C; constrains thermal design margin in enclosed or high-ambient environments.

Pinout & Package

Package: SC-59 (SOT-23), 3-pin surface-mount plastic case per CASE 318D, dimensions 2.90 × 1.50 × 1.15 mm, pitch 1.90 mm, MSL-1, Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires external bias network to set operating point in active or saturation region.
2	Emitter	Common terminal for PNP configuration; connected to higher potential rail in most amplifier and switch topologies.
3	Collector	Output current terminal; sinks current when biased active or saturated; routed to load or next stage input.

Key Features

Feature	Design Value
Pb-free construction	RoHS-compliant packaging with no lead content; satisfies global environmental compliance for consumer and industrial end products.
MSL-1 rating	Unlimited floor life at ≤30°C/60% RH; eliminates bake-out requirement prior to reflow soldering.
High h_FE consistency	Guaranteed 200–400 gain range at production test conditions; reduces base drive circuit variation across batches.
Low V_CE(sat)	≤0.5 V at I_C/I_B = 10 ensures <100 mW conduction loss at full rated current, improving efficiency in battery-operated switches.

Applications

Portable Audio Amplifiers	Sensor Signal Conditioning
Use Scenario: Pre-amplification of electret microphone output in Bluetooth headsets and voice-recording pens. IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology to provide 20–30 dB voltage gain with minimal distortion. Use Value: High h_FE and f_T = 80 MHz enable stable mid-band gain without compensation, while low V_CE(sat) extends battery life.	Use Scenario: Current-to-voltage conversion and level-shifting for thermistor or photodiode interfaces in wearables. IC Role / Device Role / Timing Role: Transimpedance amplifier stage or active pull-up element in analog front-end signal chains. Use Value: Tight V_(BR)EBO = 7.0 V tolerance prevents damage during ESD events near sensor nodes; MSL-1 simplifies automated assembly.
Low-Power Switching Loads	Industrial Control Interface
Use Scenario: Driving LED indicators, small relays, or piezo buzzers from microcontroller GPIO pins in smart meters and IoT edge nodes. IC Role / Device Role / Timing Role: Saturated PNP switch controlling load current between V_CC and ground-return path. Use Value: Verified V_CE(sat) ≤ 0.5 V at 100 mA ensures <50 mW heat generation, eliminating need for heatsinking in compact enclosures.	Use Scenario: Level translation and isolation between 3.3 V logic controllers and 5–12 V field-side actuators in PLC I/O modules. IC Role / Device Role / Timing Role: Discrete interface transistor providing galvanic separation and voltage-level adaptation. Use Value: V_(BR)CEO = 50 V withstands transient surges on industrial bus lines; 150°C T_J rating supports operation in uncooled control cabinets.

Portable Audio Amplifiers

Sensor Signal Conditioning

Use Scenario: Pre-amplification of electret microphone output in Bluetooth headsets and voice-recording pens.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology to provide 20–30 dB voltage gain with minimal distortion.

Use Value: High h_FE and f_T = 80 MHz enable stable mid-band gain without compensation, while low V_CE(sat) extends battery life.

Use Scenario: Current-to-voltage conversion and level-shifting for thermistor or photodiode interfaces in wearables.

IC Role / Device Role / Timing Role: Transimpedance amplifier stage or active pull-up element in analog front-end signal chains.

Use Value: Tight V_(BR)EBO = 7.0 V tolerance prevents damage during ESD events near sensor nodes; MSL-1 simplifies automated assembly.

Low-Power Switching Loads

Industrial Control Interface

Use Scenario: Driving LED indicators, small relays, or piezo buzzers from microcontroller GPIO pins in smart meters and IoT edge nodes.

IC Role / Device Role / Timing Role: Saturated PNP switch controlling load current between V_CC and ground-return path.

Use Value: Verified V_CE(sat) ≤ 0.5 V at 100 mA ensures <50 mW heat generation, eliminating need for heatsinking in compact enclosures.

Use Scenario: Level translation and isolation between 3.3 V logic controllers and 5–12 V field-side actuators in PLC I/O modules.

IC Role / Device Role / Timing Role: Discrete interface transistor providing galvanic separation and voltage-level adaptation.

Use Value: V_(BR)CEO = 50 V withstands transient surges on industrial bus lines; 150°C T_J rating supports operation in uncooled control cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT4403LT1G	V_(BR)CEO = 40 V (lower), h_FE = 100–300 (narrower range), same SC-59 package	Not suitable for 50 V rail applications; acceptable where lower voltage margin is acceptable	Select when cost sensitivity outweighs voltage headroom needs and gain consistency is less critical
PN2907A	TO-92 through-hole package, V_(BR)CEO = 60 V, h_FE = 100–300, no MSL rating	Requires manual or wave soldering; incompatible with high-density SMT lines	Choose only for prototyping or legacy through-hole designs where rework flexibility is prioritized over automation

Compared with MSA1162YT1G, MMBT4403LT1G offers lower cost but reduced voltage and gain margins, while PN2907A provides higher breakdown voltage at the expense of SMT compatibility and moisture handling-making MSA1162YT1G optimal for automated, space-constrained, 50 V-class designs.

Availability

MSA1162YT1G is available at Aetrix Electronics and suitable for portable audio amplifiers, sensor signal conditioning, and low-power switching loads requiring stable component supply, consistent h_FE distribution, and RoHS-compliant SMT assembly.

Supply support for MSA1162YT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and intelligent edge applications.

The MSA1162YT1G belongs to onsemi's general-purpose discrete transistor product line, engineered for reliable, high-yield SMT deployment in cost-sensitive, battery-powered analog signal paths.

FAQ

What is the pin configuration of the MSA1162YT1G?

The MSA1162YT1G uses STYLE 1 pinout in SC-59 package: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches JEDEC standard SOT-23 orientation and is confirmed in the official onsemi datasheet revision 8. The MSA1162YT1G must be placed with correct polarity to avoid reverse-bias damage to the emitter-base junction.

Does the MSA1162YT1G support Pb-free reflow soldering?

Yes, the MSA1162YT1G is Pb-free and rated MSL-1, meaning it can be reflow soldered without pre-baking even after indefinite dry storage. Its peak reflow temperature tolerance aligns with IPC/JEDEC J-STD-020 Class 3a profiles, making the MSA1162YT1G compatible with standard lead-free assembly lines.

What is the maximum operating temperature for the MSA1162YT1G?

The MSA1162YT1G has a maximum junction temperature (T_J) of 150°C and a storage temperature range of −55°C to +150°C. Derating begins above 25°C ambient per its thermal resistance spec; the MSA1162YT1G remains fully functional in sealed industrial enclosures up to 85°C ambient when mounted on standard FR-4 with 1 cm² copper pour.

Can the MSA1162YT1G replace the MMBT4403 in existing designs?

The MSA1162YT1G is not a direct drop-in replacement for the MMBT4403 due to higher V_(BR)CEO (50 V vs. 40 V) and broader h_FE range (200–400 vs. 100–300). While electrically compatible in many 3.3 V/5 V circuits, the MSA1162YT1G may alter bias points; verify stability and saturation behavior before substituting in an existing design using the MSA1162YT1G.

Is the MSA1162YT1G suitable for audio-frequency amplification?

Yes, the MSA1162YT1G is specified with f_T = 80 MHz and tested for h_FE stability across audio frequencies (20 Hz–20 kHz); its low noise and consistent gain make it appropriate for preamp stages in portable audio devices. The MSA1162YT1G performs reliably in common-emitter configurations with proper emitter degeneration and bypassing.

MSA1162YT1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 2mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 80MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

MSA1162YT1G FAQ

1.How can I place an order for MSA1162YT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MSA1162YT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSA1162YT1G reliable?

The price and inventory of MSA1162YT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSA1162YT1G is usually 5 days.

3.What payment methods are accepted for MSA1162YT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSA1162YT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSA1162YT1G?

MSA1162YT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSA1162YT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSA1162YT1G?

For technical support, including MSA1162YT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSA1162YT1G requirements.

6.How does Aetrix verify that MSA1162YT1G is sourced from the original manufacturer or authorized distributors?

All MSA1162YT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSA1162YT1G meets industry standards.

7.What is the process for return or replacement of MSA1162YT1G?

All MSA1162YT1G units undergo pre-shipment inspection (PSI). If there is an issue with MSA1162YT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSA1162YT1G part is unused and in its original packaging.

Return procedure for MSA1162YT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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