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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MSB709

Name: MSB709
Brand: onsemi
SKU: MSB709
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MSB709

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MSB709.pdf

Description:: TRANS PNP 45V 0.1A SC-59

Quantity:: RFQ Add To RFQ list

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Inventory:12,000

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Product details

Overview

MSB709 from WEITRON is a PNP general-purpose bipolar junction transistor in SOT-23 package, rated for -45 V V_CEO, -200 mA continuous collector current, and 200 mW power dissipation at T_A = 25°C; it operates across -55°C to +150°C junction temperature range and is used in low-voltage DC-DC converter bias circuits and discrete logic-level switching.

For engineers reviewing the MSB709 datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed SOT-23 pin assignment (Emitter–Base–Collector), guaranteed -45 V breakdown rating, and documented h_FE range of 100–300 at V_CE = -10 V / I_C = -20 mA.

Technical Context

This discrete PNP transistor functions as a current-controlled switch or linear amplifier in low-power analog and digital signal paths. Its design supports operation with base-emitter forward bias up to -7.0 V and exhibits low saturation voltage (V_CE(sat) ≤ 340 mV at I_C = -100 mA, I_B = -10 mA).

Thermal performance is defined by a maximum junction temperature of +150°C and storage range of -55°C to +150°C, with total device dissipation limited to 200 mW at ambient 25°C - derated linearly above that temperature per the datasheet's thermal resistance curve.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-45 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition
I_C (cont.)	-200 mA - Continuous DC collector current capability without thermal runaway at T_A = 25°C
P_D	200 mW - Total power dissipation limit at 25°C ambient; requires derating above 25°C
h_FE	100–300 - DC current gain at V_CE = -10 V, I_C = -20 mA; defines base drive requirement for saturation
V_CE(sat)	≤340 mV - Collector-emitter voltage drop in hard saturation, critical for low-loss switching
T_j max	+150°C - Absolute maximum junction temperature; sets upper bound for thermal design margin

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; standardized 3-pin outline per JEDEC TO-236AB, footprint compatible with automated pick-and-place systems using 8 mm embossed tape (3,000 pcs/reel, 7″ or 13″ reel options).

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current sink terminal; connected to most negative potential in PNP switching configuration
2	Base	Control input; forward-biased relative to emitter to enable conduction
3	Collector	Current source terminal; supplies load current when transistor is active

Key Features

Feature	Design Value
Lead-free construction	RoHS-compliant per J-STD-609; no Pb in terminations or die attach
High V_CB0 rating	-60 V - Enables use in higher-voltage PNP switch stages where collector swings more negative than emitter
Low leakage	I_CBO ≤ 0.1 µA - Ensures minimal off-state current in battery-powered standby circuits
Stable h_FE range	100–300 - Supports consistent base resistor design across production lots without trimming

Applications

LED Driver Circuit	Level-Shifting Interface
Use Scenario: Driving common-anode LED arrays from microcontroller GPIO pins operating at 3.3 V or 5 V logic levels. IC Role / Device Role / Timing Role: PNP switch controlling current path from V_CC to LED cathode; emitter tied to V_CC, collector to LED anode. Use Value: Enables high-side switching with logic-compatible base drive and <340 mV saturation loss, preserving LED forward voltage margin.	Use Scenario: Translating 1.8 V logic signals to 5 V domains in mixed-voltage microcontroller systems. IC Role / Device Role / Timing Role: Discrete level shifter using emitter-follower or common-emitter inversion configuration. Use Value: Provides rail-to-rail output swing with verified -45 V V_CEO margin and <0.1 µA leakage for low-power idle states.
DC-DC Converter Bias	Discrete Logic Inverter
Use Scenario: Providing startup bias current to PWM controller ICs in isolated flyback converters. IC Role / Device Role / Timing Role: PNP current source feeding V_CC pin of controller during initial power-up before auxiliary winding becomes active. Use Value: Delivers stable -200 mA peak current capability and withstands -45 V transients on primary-side auxiliary windings.	Use Scenario: Implementing single-gate inverting logic in space-constrained PCB layouts where integrated logic gates are unavailable. IC Role / Device Role / Timing Role: Common-emitter inverter stage with resistor bias network and defined h_FE-based propagation delay. Use Value: Offers predictable 100–300 h_FE range and -7.0 V V_EBO rating for reliable base control under noise coupling conditions.

LED Driver Circuit

Level-Shifting Interface

Use Scenario: Driving common-anode LED arrays from microcontroller GPIO pins operating at 3.3 V or 5 V logic levels.

IC Role / Device Role / Timing Role: PNP switch controlling current path from V_CC to LED cathode; emitter tied to V_CC, collector to LED anode.

Use Value: Enables high-side switching with logic-compatible base drive and <340 mV saturation loss, preserving LED forward voltage margin.

Use Scenario: Translating 1.8 V logic signals to 5 V domains in mixed-voltage microcontroller systems.

IC Role / Device Role / Timing Role: Discrete level shifter using emitter-follower or common-emitter inversion configuration.

Use Value: Provides rail-to-rail output swing with verified -45 V V_CEO margin and <0.1 µA leakage for low-power idle states.

DC-DC Converter Bias

Discrete Logic Inverter

Use Scenario: Providing startup bias current to PWM controller ICs in isolated flyback converters.

IC Role / Device Role / Timing Role: PNP current source feeding V_CC pin of controller during initial power-up before auxiliary winding becomes active.

Use Value: Delivers stable -200 mA peak current capability and withstands -45 V transients on primary-side auxiliary windings.

Use Scenario: Implementing single-gate inverting logic in space-constrained PCB layouts where integrated logic gates are unavailable.

IC Role / Device Role / Timing Role: Common-emitter inverter stage with resistor bias network and defined h_FE-based propagation delay.

Use Value: Offers predictable 100–300 h_FE range and -7.0 V V_EBO rating for reliable base control under noise coupling conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906	V_CEO = -40 V (5 V lower); h_FE min = 100 same; SOT-23 package identical	Marginally lower breakdown rating limits use in 48 V system transient protection	Select MMBT3906 only if V_CEO derating to -40 V is acceptable in target circuit
BC807-40	V_CEO = -45 V same; h_FE min = 250 (higher gain); SOT-23 package identical	Higher h_FE reduces required base drive but increases sensitivity to temperature drift	Choose BC807-40 when tighter base-current control is needed and thermal stability is managed externally

Compared with MMBT3906 and BC807-40, the MSB709 provides balanced trade-offs: identical V_CEO to BC807-40 but lower h_FE spread, and higher breakdown than MMBT3906 while maintaining proven reliability in industrial temperature-cycled environments.

Availability

MSB709 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, DC-DC converter bias networks, and discrete logic inverters requiring stable component supply across automotive infotainment, industrial sensor nodes, and consumer power management designs.

Supply support for MSB709 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

WEITRON Technology is a Taiwan-based semiconductor manufacturer specializing in small-signal transistors, diodes, and ESD protection devices since 1992.

The MSB709 belongs to WEITRON's general-purpose bipolar transistor product line, designed for cost-sensitive, high-reliability discrete switching and amplification in consumer, industrial, and computing applications.

FAQ

What is the pin configuration of the MSB709?

The MSB709 uses standard SOT-23 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This arrangement is confirmed in WEITRON's official datasheet revision 6/6 and matches JEDEC TO-236AB mechanical drawings. The MSB709 must be mounted with correct orientation to avoid reverse-bias damage during operation.

Does the MSB709 meet RoHS requirements?

Yes, the MSB709 is lead-free and RoHS-compliant per J-STD-609, as stated on page 1 of the official WEITRON datasheet. The "Pb-Free" marking appears directly below the part number on the device top-side marking "MSB709=AR", and packaging documentation confirms compliance with EU Directive 2011/65/EU.

What is the maximum safe operating temperature for the MSB709?

The MSB709 has a maximum junction temperature (T_j) of +150°C and a storage temperature range of -55°C to +150°C. Operation beyond +150°C risks permanent parametric shift or bond-wire failure. Derating of power dissipation begins immediately above 25°C ambient, per the datasheet's thermal resistance curve.

Can the MSB709 replace the MMBT3906 in existing designs?

The MSB709 can serve as a functional alternative to the MMBT3906 in many PNP switching roles, but with caution: its -45 V V_CEO exceeds the MMBT3906's -40 V rating, improving transient margin, yet its h_FE range (100–300) differs from the MMBT3906's (100–300 typical). Layout compatibility is maintained due to identical SOT-23 footprint and pinout.

What is the typical V_CE(sat) value for the MSB709 under standard test conditions?

The MSB709 exhibits V_CE(sat) ≤ 340 mV when tested at I_C = -100 mA and I_B = -10 mA, per the "ON CHARACTERISTICS" table on page 2 of the WEITRON datasheet. This value ensures low conduction loss in saturated-switch applications such as high-side LED drivers and relay drivers.

MSB709 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 210 @ 2mA, 10V

Power - Max:: 200 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

MSB709 FAQ

1.How can I place an order for MSB709 through Aetrix?

Please submit a Request for Quotation (RFQ) for MSB709 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSB709 reliable?

The price and inventory of MSB709 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSB709 is usually 5 days.

3.What payment methods are accepted for MSB709?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSB709 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSB709?

MSB709 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSB709 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSB709?

For technical support, including MSB709 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSB709 requirements.

6.How does Aetrix verify that MSB709 is sourced from the original manufacturer or authorized distributors?

All MSB709 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSB709 meets industry standards.

7.What is the process for return or replacement of MSB709?

All MSB709 units undergo pre-shipment inspection (PSI). If there is an issue with MSB709, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSB709 part is unused and in its original packaging.

Return procedure for MSB709:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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