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onsemi MSB709-RT1
- Part No.:
- MSB709-RT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MSB709-RT1.pdf
- Description:
- TRANS PNP 45V 0.1A SC-59
- Quantity:
- Payment:
- Shipping:
Inventory:2,559
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Product details
Overview
MSB709-RT1 from onsemi is a PNP general-purpose amplifier transistor in SC-59 surface-mount package, rated for −45 V V(BR)CEO, −100 mA IC continuous, 210–340 hFE at 2 mA/10 V, and 200 mW power dissipation - used in low-power signal amplification and switching circuits in consumer audio and sensor interface stages.
For engineers reviewing the MSB709-RT1 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, SC-59 terminal mapping, real-world use cases, and two confirmed alternative transistors with documented functional and application-level differences.
Technical Context
This PNP bipolar junction transistor operates in linear amplification and saturated switching modes. Its V(BR)EBO of −7.0 V limits base-emitter reverse bias, while ICEO ≤ −100 nA ensures low leakage in standby states - critical for battery-powered sensor front-ends.
The device exhibits hFE1 = 210–340 at VCE = 10 V and IC = 2.0 mA, supporting stable small-signal gain across production lots. VCE(sat) ≤ −0.5 V at IC = 100 mA/IB = 10 mA confirms reliable on-state performance in digital logic interfacing and LED driver stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)CEO | −45 Vdc - maximum collector-emitter voltage before breakdown; defines safe operating range in low-voltage PNP switch designs |
| IC (continuous) | −100 mAdc - continuous collector current limit; sets upper bound for sustained load drive capability |
| hFE1 | 210–340 - DC current gain at 2 mA/10 V; enables predictable base drive sizing in amplifier bias networks |
| VCE(sat) | ≤ −0.5 Vdc at IC = 100 mA/IB = 10 mA - low saturation voltage reduces conduction loss in switching applications |
| PD | 200 mW - maximum power dissipation at TA = 25°C; constrains thermal design in compact SMT layouts |
| TJ max | 150°C - absolute maximum junction temperature; informs derating requirements for reliability over life |
Pinout & Package
MSB709-RT1 uses the SC-59 (Case 318D) surface-mount package: 2.90 mm × 1.50 mm × 1.15 mm body, 1.90 mm lead pitch, 3-terminal configuration with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control electrode; requires current-limited drive to bias transistor into active or saturation region |
| 2 | Emiter | Current source terminal in PNP operation; connected to higher potential rail in common-emitter configurations |
| 3 | Collector | Output current sink terminal; carries load current to ground or lower-potential node |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free packaging option | MSB709-RT1G variant available per J-STD-609; supports RoHS-compliant manufacturing without requalification |
| Low ICEO leakage | ≤ −100 nAdc at VCE = 10 V - minimizes standby current in always-on sensor nodes and portable devices |
| Guaranteed hFE range | 210–340 at 2 mA/10 V - eliminates need for gain-bin sorting in cost-sensitive consumer electronics |
| SC-59 footprint compatibility | Standardized 3-pin gull-wing layout - enables drop-in replacement with other SC-59 PNP transistors in existing PCBs |
Applications
| Audio Pre-amplifier Stage | Temperature Sensor Interface |
|---|---|
Use Scenario: Amplifying weak mV-level signals from electret microphones or piezoelectric transducers in portable voice recorders. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for stable gain. Use Value: hFE = 210–340 ensures consistent voltage gain across batches; VCE(sat) ≤ −0.5 V prevents clipping at supply rails near 3.3 V. | Use Scenario: Converting resistance changes from NTC thermistors into proportional current in HVAC control modules. IC Role / Device Role / Timing Role: Constant-current source configured with base bias network and emitter resistor. Use Value: Low ICEO (≤ −100 nA) avoids measurement offset errors; −45 V V(BR)CEO allows operation with 24 V industrial supplies. |
| LED Driver Switch | Logic-Level Translator |
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU GPIO pins in industrial HMIs. IC Role / Device Role / Timing Role: Saturated PNP switch sinking current from LED anode to VCC rail. Use Value: VCE(sat) ≤ −0.5 V keeps forward voltage drop minimal; −100 mA IC rating supports multiple parallel LEDs. | Use Scenario: Level-shifting 1.8 V I²C signals to 5 V bus segments in mixed-voltage embedded systems. IC Role / Device Role / Timing Role: Open-collector pull-up translator using PNP as active-high inverter stage. Use Value: −7.0 V V(BR)EBO protects base during negative-going transitions; hFE > 210 ensures fast edge response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose amplifier transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT709LT1G | Same SC-59 package, identical hFE (210–340), but V(BR)CEO = −40 V (5 V lower); ICEO ≤ −100 nA unchanged | Suitable for ≤ 40 V rail applications only; not recommended where −45 V margin is required for surge immunity | Select MMBT709LT1G only if system max VCE stays below 40 V and Pb-free compliance is mandatory |
| PN2907A | TO-92 through-hole package; same V(BR)CEO (−45 V), hFE = 100–300 (lower min gain); PD = 625 mW (higher) | Requires PCB redesign for through-hole mounting; higher power handling suits higher-current analog stages | Choose PN2907A when board space allows TO-92 and thermal budget exceeds 200 mW |
Compared with MMBT709LT1G and PN2907A, the MSB709-RT1 uniquely balances −45 V breakdown margin, SC-59 SMT compatibility, and guaranteed 210–340 hFE - making it optimal for space-constrained, medium-voltage portable electronics where gain consistency and leakage control are prioritized over raw power.
Availability
MSB709-RT1 is available at Aetrix Electronics and suitable for audio pre-amplifiers, temperature sensor interfaces, LED driver switches, and logic-level translators requiring stable component supply and long-term manufacturability.
Supply support for MSB709-RT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering discrete, analog, and logic solutions for automotive, industrial, and consumer markets.
The MSB709-RT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-volume signal amplification and switching in portable and industrial equipment where reliability and Pb-free compliance are essential.
FAQ
What is the maximum collector-emitter voltage rating for the MSB709-RT1?
The MSB709-RT1 has a maximum collector-emitter breakdown voltage V(BR)CEO of −45 Vdc at IC = 2.0 mAdc and IB = 0. This rating defines the absolute upper limit for voltage applied between collector and emitter before avalanche breakdown occurs. Designers must ensure operating VCE remains below this value under all conditions, including transients, to prevent device failure. The MSB709-RT1 datasheet specifies this parameter under standard test conditions (TA = 25°C).
Does the MSB709-RT1 have a Pb-free version, and how is it marked?
Yes, the Pb-free version is designated MSB709-RT1G and uses the same SC-59 package. It is marked with a "G" suffix and/or a microdot indicator per J-STD-609. The MSB709-RT1G meets RoHS requirements without altering electrical specifications. Both MSB709-RT1 and MSB709-RT1G share identical maximum ratings and electrical characteristics - only the plating composition differs. Always verify marking on reel labels or top-side device codes when ordering.
What is the DC current gain (hFE) range for the MSB709-RT1, and at what conditions is it specified?
The MSB709-RT1 exhibits a DC current gain hFE1 of 210 to 340, measured at VCE = 10 Vdc and IC = 2.0 mAdc with TA = 25°C. This guaranteed range applies across production lots and eliminates binning for most consumer-grade amplification tasks. The MSB709-RT1 datasheet confirms this is a minimum-to-maximum specification, not typical-only data. Gain stability is maintained within ±15% over the −55°C to +125°C operating junction range.
Can the MSB709-RT1 be used as a saturated switch, and what is its saturation voltage?
Yes, the MSB709-RT1 is qualified for saturated switching with VCE(sat) ≤ −0.5 Vdc at IC = 100 mAdc and IB = 10 mAdc. This low saturation voltage minimizes power loss and heat generation when used as a current sink switch - for example, driving LEDs or relays from microcontroller outputs. The MSB709-RT1 achieves full saturation with a 10:1 overdrive ratio (IB/IC = 0.1), ensuring robust turn-on even with process variation.
What is the thermal limit for the MSB709-RT1, and how does it affect PCB layout?
The MSB709-RT1 has a maximum junction temperature TJ of 150°C and a power dissipation limit PD of 200 mW at TA = 25°C. With its SC-59 package, thermal resistance θJA is approximately 625°C/W - meaning even 100 mW dissipation raises junction temperature by ~62.5°C above ambient. To maintain reliability, PCB layout must include adequate copper pour on the collector pad and avoid enclosing the device in thermally isolated areas. The MSB709-RT1 datasheet recommends derating PD by 1.6 mW/°C above 25°C ambient.
MSB709-RT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 210 @ 2mA, 10V
- Power - Max:
- 200 mW
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
MSB709-RT1 FAQ
1.How can I place an order for MSB709-RT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MSB709-RT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MSB709-RT1 reliable?
The price and inventory of MSB709-RT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSB709-RT1 is usually 5 days.
3.What payment methods are accepted for MSB709-RT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSB709-RT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MSB709-RT1?
MSB709-RT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MSB709-RT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MSB709-RT1?
For technical support, including MSB709-RT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSB709-RT1 requirements.
6.How does Aetrix verify that MSB709-RT1 is sourced from the original manufacturer or authorized distributors?
All MSB709-RT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSB709-RT1 meets industry standards.
7.What is the process for return or replacement of MSB709-RT1?
All MSB709-RT1 units undergo pre-shipment inspection (PSI). If there is an issue with MSB709-RT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MSB709-RT1 part is unused and in its original packaging.
Return procedure for MSB709-RT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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